IRFB3307 N-Channel MOSFET 75V 130A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRFB3307 is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 75V drain-to-source voltage and 130A continuous drain current at 25°C. The device is housed in a TO-220AB through-hole package and is designed for high-current switching applications requiring robust thermal performance.

The IRFB3307 carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal dissipation capability.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	75	V	Maximum rating
Continuous Drain Current (Id)	130	A	@ 25°C (Tc)
On-Resistance (Rds On)	6.3	mOhm	@ 75A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4	V	@ 150µA
Gate Charge (Qg)	180	nC	@ 10V Vgs
Power Dissipation (Max)	250	W	@ Tc
Operating Temperature Range	-55 to 175	°C	Junction temperature (TJ)
Package Type	TO-220AB	—	Through-hole
Technology	MOSFET (Metal Oxide)	—	N-Channel

Substitute Part Grouping Explanation

Substitution eligibility for the IRFB3307 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 130A at 25°C
On-Resistance (Rds On): Must not exceed 6.3mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible within ±20V gate voltage range
Package Type: Must be TO-220AB or equivalent TO-220-3 through-hole configuration
Operating Temperature: Must support -55°C to 175°C range
Technology: N-Channel MOSFET (Metal Oxide)

Substitute Categories:

Direct Equivalents (Identical Electrical Performance): Parts that maintain the same Vdss, Id, and Rds On specifications within the same package footprint.

Functional Equivalents (Acceptable Performance Trade-offs): Parts that maintain Vdss and package compatibility but may have variations in Id, Rds On, or power dissipation within acceptable operating margins for the application.

Cross-Manufacturer Alternatives: Parts from different manufacturers (STMicroelectronics, onsemi, NXP Semiconductors) that meet the core electrical requirements and package specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRFB3307	Infineon	75	130	6.3	180	250	TO-220AB	Obsolete
IRFB3307PBF	Infineon	75	130	6.3	180	200	TO-220AB	Active
IRFB3307ZPBF	Infineon	75	120	5.8	110	230	TO-220AB	Active
IRFB3207ZPBF	Infineon	75	120	4.1	170	300	TO-220AB	Active
STP140NF75	STMicroelectronics	75	120	7.5	218	310	TO-220	Active
STP140N8F7	STMicroelectronics	80	90	4.3	96	200	TO-220	Active
FDP060AN08A0	onsemi	75	80	6	95	255	TO-220-3	Active
PHP29N08T,127	NXP Semiconductors	75	27	50	19	88	TO-220AB	Active
PHP79NQ08LT,127	Nexperia USA Inc.	75	73	16	30	157	TO-220AB	Obsolete

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Highest Compatibility):

IRFB3307PBF is the primary direct equivalent. This part maintains identical Vdss (75V), Id (130A), and Rds On (6.3mOhm) specifications as the obsolete IRFB3307. The device is manufactured by Infineon Technologies in the same HEXFET® series and housed in the TO-220AB package. IRFB3307PBF carries Active product status and is RoHS3 compliant, making it suitable for new designs and ongoing production support. Power dissipation is rated at 200W, which is lower than the original 250W specification but remains adequate for most applications within the electrical parameter envelope.

IRFB3307ZPBF is an alternative Infineon offering with Active status. While it maintains the 75V Vdss rating, the continuous drain current is reduced to 120A and on-resistance is improved to 5.8mOhm. This part is suitable for applications where the full 130A rating is not required and where improved on-resistance characteristics provide design benefits. Gate charge is significantly reduced (110nC versus 180nC), resulting in faster switching performance.

Tier 2 - Functional Equivalents (Acceptable Performance Trade-offs):

IRFB3207ZPBF (Infineon) maintains 75V Vdss and 120A continuous drain current with superior on-resistance of 4.1mOhm. Power dissipation is rated at 300W, exceeding the original specification. This device is suitable for applications prioritizing reduced conduction losses and improved thermal performance. Active product status and RoHS3 compliance support long-term availability.

STP140NF75 (STMicroelectronics) is rated for 75V Vdss and 120A continuous drain current in the STripFET™ III series. On-resistance is 7.5mOhm, slightly higher than the IRFB3307 baseline. Power dissipation reaches 310W. The device is housed in TO-220 package (compatible footprint with TO-220AB) and carries Active status with RoHS3 compliance. This part is suitable for applications where STMicroelectronics supply chain preference or design qualification exists.

Tier 3 - Cross-Manufacturer Alternatives (Limited Compatibility):

FDP060AN08A0 (onsemi) provides 75V Vdss with 80A continuous drain current (Tc) in the PowerTrench® series. On-resistance is 6mOhm, and power dissipation is 255W. This device is suitable only for applications where the 80A current rating is sufficient. Active product status and RoHS3 compliance are confirmed.

STP140N8F7 (STMicroelectronics) is rated for 80V Vdss and 90A continuous drain current. While the voltage rating exceeds the IRFB3307 specification, the current rating is significantly reduced. This part is suitable only for lower-current applications and is not recommended as a direct substitute for 130A designs.

Not Recommended for Substitution:

PHP29N08T,127 (NXP Semiconductors) is rated for only 27A continuous drain current and 50mOhm on-resistance. This device is unsuitable for applications requiring 130A performance.

PHP79NQ08LT,127 (Nexperia USA Inc.) carries Obsolete product status and is therefore not recommended for new designs or ongoing production support, despite meeting some electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can IRFB3307PBF be used as a direct replacement for IRFB3307?

A: Yes. IRFB3307PBF maintains identical electrical specifications for Vdss (75V), Id (130A), and Rds On (6.3mOhm). Both devices are housed in TO-220AB packages and operate across the same temperature range (-55°C to 175°C). The primary difference is product status: IRFB3307PBF is Active, while IRFB3307 is Obsolete. IRFB3307PBF is RoHS3 compliant, supporting regulatory requirements for new designs.

Q: What is the difference between IRFB3307PBF and IRFB3307ZPBF?

A: Both are Infineon HEXFET® devices with 75V Vdss rating and Active product status. IRFB3307PBF maintains the original 130A continuous drain current and 6.3mOhm on-resistance. IRFB3307ZPBF reduces continuous drain current to 120A but improves on-resistance to 5.8mOhm and significantly reduces gate charge (110nC versus 180nC). IRFB3307ZPBF is suitable for applications where the full 130A rating is not required and where faster switching is beneficial.

Q: Are STMicroelectronics parts compatible with Infineon IRFB3307 designs?

A: STMicroelectronics STP140NF75 and STP140N8F7 are electrically compatible with the IRFB3307 in terms of package footprint (TO-220) and voltage rating (75V or 80V). However, current and on-resistance specifications differ. STP140NF75 supports 120A at 7.5mOhm, while STP140N8F7 supports only 90A at 4.3mOhm. Compatibility depends on whether the application can tolerate these parameter variations. Both devices are Active and RoHS3 compliant.

Q: Can onsemi FDP060AN08A0 replace IRFB3307 in high-current applications?

A: No. FDP060AN08A0 is rated for 80A continuous drain current (Tc), which is significantly below the IRFB3307 specification of 130A. This device is suitable only for applications requiring 80A or less. Attempting to use FDP060AN08A0 in a 130A design will result in thermal stress and potential device failure.

Q: Why is NXP PHP29N08T,127 listed as a substitute if it only supports 27A?

A: PHP29N08T,127 is included in the provided substitute list but is not recommended for direct substitution due to its 27A continuous drain current rating, which is far below the IRFB3307 requirement of 130A. This part is suitable only for significantly different application requirements and should not be selected for IRFB3307 replacement.

Q: What is the significance of the ZPBF suffix in Infineon part numbers?

A: The ZPBF suffix indicates a specific packaging and lead-finish specification within Infineon's product line. IRFB3307ZPBF and IRFB3307PBF are both valid Infineon equivalents with different packaging configurations (Tube versus other formats). Both maintain electrical compatibility with the original IRFB3307 within their respective parameter ranges.

Q: Are all substitute parts RoHS3 compliant?

A: No. The original IRFB3307 is RoHS non-compliant. However, all Active substitute parts listed (IRFB3307PBF, IRFB3307ZPBF, IRFB3207ZPBF, STP140NF75, STP140N8F7, FDP060AN08A0) are RoHS3 compliant. This compliance is mandatory for new designs and production in regulated markets. Obsolete parts (PHP79NQ08LT,127) may not meet current RoHS requirements.

Q: What is the impact of reduced power dissipation in IRFB3307PBF (200W) compared to IRFB3307 (250W)?

A: The 50W reduction in maximum power dissipation (from 250W to 200W) reflects thermal management differences between the two devices. For applications operating below 200W, this difference is not significant. For applications approaching or exceeding 200W, thermal design must be re-evaluated. IRFB3307ZPBF (230W) and IRFB3207ZPBF (300W) offer higher power dissipation ratings if thermal headroom is critical.

Q: Can I use multiple lower-current devices in parallel to replace a single IRFB3307?

A: Parallel operation of MOSFETs requires careful circuit design to ensure current sharing and thermal balance. This approach is not recommended as a simple substitution strategy without comprehensive re-design and testing. Direct equivalent parts (IRFB3307PBF) are preferred for maintaining design integrity.

Q: What packaging considerations apply when substituting TO-220 for TO-220AB?

A: TO-220 and TO-220AB are mechanically compatible through-hole packages with identical pin spacing and mounting footprints. Both support the same thermal interface requirements (heatsink mounting). Electrical performance is equivalent. Substitution between these package variants is acceptable from a mechanical and thermal perspective.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message