IRFB16N60LPBF N-Channel 600V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFB16N60LPBF is an N-Channel 600V 16A MOSFET manufactured by Vishay Siliconix in a Through Hole TO-220AB package. This device is rated for 310W power dissipation and operates across a temperature range of -55°C to 150°C. The part is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

IRFB16N60LPBF
Vishay SiliconixIn Stock: 1964IRFB16N60LPBF Datasheet
IRFB16N60LPBF
Current Part
FCP16N60N
Fairchild SemiconductorIn Stock: 5664FCP16N60N Datasheet
FCP16N60N
MFR Recommended
FCP7N60
onsemiIn Stock: 15208FCP7N60 Datasheet
FCP7N60
MFR Recommended
IXFP14N60P
IXYSIn Stock: 15363IXFP14N60P Datasheet
IXFP14N60P
MFR Recommended
IXTP14N60PM
IXYSIn Stock: 1196IXTP14N60PM Datasheet
IXTP14N60PM
MFR Recommended
IXTP8N65X2M
IXYSIn Stock: 1098IXTP8N65X2M Datasheet
IXTP8N65X2M
MFR Recommended
SPP07N60C3XKSA1
Infineon TechnologiesIn Stock: 1014SPP07N60C3XKSA1 Datasheet
SPP07N60C3XKSA1
MFR Recommended
STP10N60M2
STMicroelectronicsIn Stock: 1342STP10N60M2 Datasheet
STP10N60M2
MFR Recommended
STP10NM60N
STMicroelectronicsIn Stock: 18850STP10NM60N Datasheet
STP10NM60N
MFR Recommended
STP10NM60ND
STMicroelectronicsIn Stock: 1309STP10NM60ND Datasheet
STP10NM60ND
MFR Recommended
STP11N65M5
STMicroelectronicsIn Stock: 893STP11N65M5 Datasheet
STP11N65M5
MFR Recommended
STP11NM60ND
STMicroelectronicsIn Stock: 5212STP11NM60ND Datasheet
STP11NM60ND
MFR Recommended
STP13N60M2
STMicroelectronicsIn Stock: 1425STP13N60M2 Datasheet
STP13N60M2
MFR Recommended
STP13NK60Z
STMicroelectronicsIn Stock: 1788STP13NK60Z Datasheet
STP13NK60Z
MFR Recommended
STP22NM60N
STMicroelectronicsIn Stock: 25167STP22NM60N Datasheet
STP22NM60N
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 16 A
Rds On (Max) @ 9A, 10V 460 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 5 V
Gate Charge (Qg) @ 10V 100 nC
Input Capacitance (Ciss) @ 25V 2720 pF
Power Dissipation (Max) 310 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package TO-220-3
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFB16N60LPBF is determined by the following critical parameters:

Primary Matching Criteria:

  • Drain to Source Voltage (Vdss): 600V or higher
  • Continuous Drain Current (Id): 16A or higher
  • Gate Drive Voltage: 10V
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Through Hole
  • Package: TO-220-3 or compatible footprint

Secondary Compatibility Factors:

  • Rds On characteristics at specified gate voltage
  • Gate Charge (Qg) and Input Capacitance (Ciss) for switching performance
  • Power Dissipation capability
  • RoHS3 Compliance and REACH Status

Substitute parts are grouped into three categories based on current rating and thermal performance:

Category A (Full Equivalents - 16A rated): Parts with 16A continuous drain current and comparable power dissipation, suitable for direct replacement in applications requiring the full 16A specification.

Category B (Partial Equivalents - 14A rated): Parts with 14A continuous drain current, acceptable for applications with slightly reduced current headroom but maintaining 600V voltage rating and similar thermal characteristics.

Category C (Reduced Current Equivalents - 7-10A rated): Parts with 7A to 10A continuous drain current, suitable only for applications where the full 16A specification is not required, or where thermal management is improved.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Ciss (pF) Pd Max (W) Package Status
IRFB16N60LPBF Vishay Siliconix 600 16 460 @ 9A, 10V 100 @ 10V 2720 @ 25V 310 TO-220-3 Obsolete
FCP16N60N Fairchild Semiconductor 600 16 199 @ 8A, 10V 52.3 @ 10V 2170 @ 100V 134.4 TO-220-3 Active
IXFP14N60P IXYS 600 14 550 @ 7A, 10V 36 @ 10V 2500 @ 25V 300 TO-220-3 Active
FCP7N60 onsemi 600 7 600 @ 3.5A, 10V 30 @ 10V 920 @ 25V 83 TO-220-3 Not For New Designs
IXTP14N60PM IXYS 600 7 550 @ 7A, 10V 36 @ 10V 2500 @ 25V 75 TO-220-3 Isolated Tab Active
IXTP8N65X2M IXYS 650 4 550 @ 4A, 10V 12 @ 10V 800 @ 25V 32 TO-220-3 Active
SPP07N60C3XKSA1 Infineon Technologies 650 7.3 600 @ 4.6A, 10V 27 @ 10V 790 @ 25V 83 TO-220-3 Active
STP10N60M2 STMicroelectronics 600 7.5 600 @ 3A, 10V 13.5 @ 10V 400 @ 100V 85 TO-220-3 Active
STP10NM60N STMicroelectronics 600 10 550 @ 4A, 10V 19 @ 10V 540 @ 50V 70 TO-220-3 Active
STP10NM60ND STMicroelectronics 600 8 600 @ 4A, 10V 20 @ 10V 577 @ 50V 70 TO-220-3 Obsolete
STP11N65M5 STMicroelectronics 650 9 480 @ 4.5A, 10V 17 @ 10V 644 @ 100V 85 TO-220-3 Active

Engineering Selection Recommendations

For Direct Replacement (16A Continuous Current Required):

The FCP16N60N from Fairchild Semiconductor is the only substitute that maintains the full 16A continuous drain current specification. This part is Active and RoHS3 Compliant. The FCP16N60N exhibits superior Rds On performance (199 mOhm vs. 460 mOhm) and lower gate charge (52.3 nC vs. 100 nC), resulting in improved efficiency and faster switching. However, power dissipation is reduced to 134.4W, which may require thermal design review in applications previously relying on the 310W capability of the IRFB16N60LPBF.

For Applications Tolerating 14A Current Rating:

The IXFP14N60P from IXYS provides 14A continuous drain current with 600V Vdss and maintains comparable power dissipation (300W). This part is Active and RoHS3 Compliant. The IXFP14N60P is suitable for applications where 14A meets the design requirement or where current derating is acceptable.

For Applications Tolerating 10A or Lower Current Rating:

The STP10NM60N from STMicroelectronics provides 10A continuous drain current with 600V Vdss and is Active with RoHS3 Compliance. This part is recommended for applications where the full 16A specification is not required and where thermal management is improved due to lower power dissipation (70W).

For Applications Tolerating 7-9A Current Rating:

Multiple options exist including FCP7N60 (onsemi), STP10N60M2 (STMicroelectronics), SPP07N60C3XKSA1 (Infineon), and STP11N65M5 (STMicroelectronics). All are Active with RoHS3 Compliance. These parts are suitable only for applications with significantly reduced current requirements.

Compliance Considerations:

All recommended Active substitutes are RoHS3 Compliant and REACH Unaffected. The IRFB16N60LPBF and several substitutes are classified as Obsolete or Not For New Designs; these should be avoided for new design implementations.

Frequently Asked Questions (FAQ)

Q: Can the FCP16N60N directly replace the IRFB16N60LPBF in all applications?

A: The FCP16N60N matches the 16A continuous drain current and 600V voltage rating. However, the power dissipation rating is reduced from 310W to 134.4W. Applications requiring the full 310W thermal capability must be re-evaluated. The improved Rds On and gate charge characteristics of the FCP16N60N generally result in better overall performance.

Q: What is the difference between TO-220-3 and TO-220-3 Isolated Tab packages?

A: The TO-220-3 Isolated Tab variant (used in IXTP14N60PM) provides electrical isolation between the mounting tab and the drain terminal, whereas standard TO-220-3 packages have the tab connected to the drain. This affects thermal management and circuit isolation requirements. Isolated tab variants are not interchangeable with standard TO-220-3 packages without circuit modification.

Q: Can I use a 14A-rated part in place of a 16A-rated part?

A: A 14A-rated substitute is acceptable only if the application design allows for current derating or if the actual operating current is confirmed to be 14A or lower. The IXFP14N60P provides this option with Active status and RoHS3 compliance.

Q: Why do some substitutes have higher Vdss ratings (650V instead of 600V)?

A: Higher Vdss ratings provide additional voltage margin and are backward compatible with 600V applications. Parts such as SPP07N60C3XKSA1 (650V) and STP11N65M5 (650V) can be used in 600V circuits without functional issues, though they may have different switching characteristics.

Q: Are there any substitutes with lower gate charge for faster switching?

A: Yes. The IXTP8N65X2M has the lowest gate charge at 12 nC compared to the original 100 nC. However, this part is rated for only 4A continuous current and 650V, making it suitable only for low-current applications.

Q: Which substitute offers the best Rds On performance?

A: The FCP16N60N provides the lowest Rds On at 199 mOhm (measured at 8A, 10V), compared to the original 460 mOhm (measured at 9A, 10V). This results in lower conduction losses and improved efficiency.

Q: Can I use an Obsolete-status part as a substitute?

A: Obsolete parts such as STP10NM60ND and FCP7N60 (Not For New Designs) should not be selected for new design implementations. These parts are included in this reference for legacy system support only.

Q: What is the impact of different input capacitance (Ciss) values?

A: Input capacitance affects gate drive circuit design and switching speed. Lower Ciss values (such as 400 pF in STP10N60M2) require less gate charge and may allow faster switching, while higher values (such as 2720 pF in the original part) require more robust gate drive circuits but may provide better noise immunity.

Q: Are all listed substitutes RoHS3 Compliant?

A: All Active-status substitutes listed are RoHS3 Compliant. Obsolete and Not For New Designs parts may have different compliance status; verify compliance requirements for your specific application before selection.

Request Quote (Ships tomorrow)