IRF9Z34NSTRR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9Z34NSTRR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 19A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of active equivalent and substitute components for ongoing design support and procurement.

The IRF9Z34NSTRR operates across a temperature range of -55°C to 175°C and is designed for applications requiring moderate voltage and current switching capabilities in a compact surface mount form factor. Due to its obsolete status, equivalent parts with active product status are required for new designs and production continuity.

Substiute Parts

IRF9Z34NSTRR
Infineon TechnologiesIn Stock: 969IRF9Z34NSTRR Datasheet
IRF9Z34NSTRR
Current Part
IRF9Z34NSTRLPBF
Infineon TechnologiesIn Stock: 17215IRF9Z34NSTRLPBF Datasheet
IRF9Z34NSTRLPBF
Parametric Equivalent
FQB22P10TM
onsemiIn Stock: 15277FQB22P10TM Datasheet
FQB22P10TM
MFR Recommended
IRF9Z34SPBF
Vishay SiliconixIn Stock: 1506IRF9Z34SPBF Datasheet
IRF9Z34SPBF
MFR Recommended
IRF9Z34STRLPBF
Vishay SiliconixIn Stock: 2124IRF9Z34STRLPBF Datasheet
IRF9Z34STRLPBF
MFR Recommended
IRF9Z34STRRPBF
Vishay SiliconixIn Stock: 2054IRF9Z34STRRPBF Datasheet
IRF9Z34STRRPBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel -
Drain to Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 19 A (Tc)
RDS(on) Max @ 10A, 10V 100 mOhm
Gate Threshold Voltage (Vgs(th)) Max @ 250µA 4 V
Gate Charge (Qg) Max @ 10V 35 nC
Input Capacitance (Ciss) Max @ 25V 620 pF
Power Dissipation (Ta) 3.8 W
Power Dissipation (Tc) 68 W
Operating Temperature Range -55 to 175 °C (TJ)
Package Type D2PAK (TO-263-3) -
Mounting Type Surface Mount -

Substitute Part Grouping Explanation

Substitution of the IRF9Z34NSTRR is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel configuration
  • Drain-to-Source Voltage (Vdss): Minimum 55V rating
  • Continuous Drain Current (Id): Minimum 19A at 25°C
  • Package Type: D2PAK (TO-263-3) surface mount form factor
  • RDS(on) characteristics: Maximum on-resistance at specified gate voltage
  • Operating Temperature Range: -55°C to 175°C minimum

Substitution Categories:

Category 1 - Parametric Equivalent (Same Base Specifications): IRF9Z34NSTRLPBF from Infineon Technologies maintains identical electrical specifications to the main part (55V, 19A, 100mOhm RDS(on)) with the same D2PAK package. The primary difference is packaging format (Cut Tape & Digi-Reel versus Tape & Reel) and active product status.

Category 2 - Enhanced Voltage Rating (Higher Vdss): FQB22P10TM from onsemi provides higher voltage capability (100V) with increased current rating (22A) and improved power dissipation (125W Tc). This part is suitable for applications where the IRF9Z34NSTRR voltage margin is insufficient.

Category 3 - Voltage Variant (Intermediate Vdss): IRF9Z34SPBF and IRF9Z34STRLPBF/IRF9Z34STRRPBF from Vishay Siliconix are rated at 60V with 18A continuous drain current. These parts share the same base product number (IRF9Z34) and D2PAK package, with slightly higher RDS(on) (140mOhm) and different packaging options.

Parameter Comparison

Parameter IRF9Z34NSTRR (Main) IRF9Z34NSTRLPBF FQB22P10TM IRF9Z34SPBF IRF9Z34STRLPBF IRF9Z34STRRPBF
Manufacturer Infineon Infineon onsemi Vishay Siliconix Vishay Siliconix Vishay Siliconix
Vdss (V) 55 55 100 60 60 60
Id @ 25°C (A) 19 19 22 18 18 18
RDS(on) Max (mOhm) 100 @ 10A, 10V 100 @ 10A, 10V 125 @ 11A, 10V 140 @ 11A, 10V 140 @ 11A, 10V 140 @ 11A, 10V
Vgs(th) Max (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA
Qg Max (nC) 35 @ 10V 35 @ 10V 50 @ 10V 34 @ 10V 34 @ 10V 34 @ 10V
Ciss Max (pF) 620 @ 25V 620 @ 25V 1500 @ 25V 1100 @ 25V 1100 @ 25V 1100 @ 25V
Power Dissipation Tc (W) 68 68 125 88 88 88
Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK
Product Status Obsolete Active Active Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Packaging Format Tape & Reel (TR) Cut Tape & Digi-Reel Cut Tape & Digi-Reel Tube Tape & Reel (TR) Tape & Reel (TR)

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications):

IRF9Z34NSTRLPBF is the primary equivalent for the obsolete IRF9Z34NSTRR. Both parts maintain identical electrical specifications (55V, 19A, 100mOhm RDS(on)) and D2PAK packaging. The IRF9Z34NSTRLPBF is active product status with ROHS3 compliance, making it suitable for new designs and production continuity. The packaging format difference (Cut Tape & Digi-Reel versus Tape & Reel) does not affect electrical performance and is a procurement consideration only.

For Applications Requiring Higher Voltage Margin:

FQB22P10TM from onsemi provides 100V Vdss rating with 22A continuous current capability. This part is appropriate for designs where the 55V rating of the IRF9Z34NSTRR presents insufficient voltage headroom. The increased gate charge (50nC versus 35nC) and input capacitance (1500pF versus 620pF) result in slightly slower switching characteristics but higher power dissipation capability (125W Tc).

For Intermediate Voltage Applications:

IRF9Z34SPBF, IRF9Z34STRLPBF, and IRF9Z34STRRPBF from Vishay Siliconix offer 60V Vdss with 18A continuous current. These parts share the same base product number and D2PAK package. The 60V rating provides moderate voltage increase over the 55V IRF9Z34NSTRR. RDS(on) is higher at 140mOhm, resulting in increased power dissipation in high-current applications. All three Vishay variants are active product status with ROHS3 compliance.

Compliance Considerations:

All substitute parts listed are ROHS3 compliant, addressing the non-compliant status of the obsolete IRF9Z34NSTRR. Selection should prioritize active product status parts to ensure long-term availability and manufacturing support.

Frequently Asked Questions (FAQ)

Q: Can IRF9Z34NSTRLPBF be used as a direct replacement for IRF9Z34NSTRR?

A: Yes. IRF9Z34NSTRLPBF maintains identical electrical specifications (55V Vdss, 19A Id, 100mOhm RDS(on)) and D2PAK package configuration. The primary difference is packaging format (Cut Tape & Digi-Reel versus Tape & Reel) and active product status. No circuit modifications are required.

Q: What is the difference between the Infineon IRF9Z34NSTRLPBF and the Vishay IRF9Z34STRLPBF?

A: Both parts share the same base product number (IRF9Z34) but differ in voltage rating and manufacturer. The Infineon part is rated 55V with 100mOhm RDS(on), while the Vishay part is rated 60V with 140mOhm RDS(on). The Vishay variant has higher on-resistance, resulting in increased power dissipation at equivalent current levels.

Q: When should FQB22P10TM be selected over IRF9Z34NSTRLPBF?

A: FQB22P10TM is selected when the application requires higher voltage capability (100V versus 55V) or higher current capacity (22A versus 19A). The trade-off is increased gate charge (50nC versus 35nC) and input capacitance (1500pF versus 620pF), resulting in slower switching speed. This part is suitable for applications with higher voltage transients or current demands.

Q: Are all substitute parts compatible with existing PCB layouts designed for IRF9Z34NSTRR?

A: Yes. All substitute parts use the D2PAK (TO-263-3) package with identical pin configuration and footprint. PCB layout modifications are not required. Thermal management considerations may differ due to variations in power dissipation ratings.

Q: What is the impact of RDS(on) differences between substitute parts?

A: RDS(on) directly affects power dissipation and heat generation. The IRF9Z34NSTRR and IRF9Z34NSTRLPBF both have 100mOhm RDS(on), while Vishay variants have 140mOhm and FQB22P10TM has 125mOhm. Higher RDS(on) increases power loss (P = I²R), requiring enhanced thermal management in high-current applications.

Q: Are there packaging format considerations when selecting substitute parts?

A: Yes. IRF9Z34NSTRLPBF is available in Cut Tape & Digi-Reel format, IRF9Z34SPBF in Tube, and IRF9Z34STRLPBF/IRF9Z34STRRPBF in Tape & Reel. Packaging format affects procurement and assembly processes but does not impact electrical performance or PCB compatibility.

Q: What is the significance of ROHS3 compliance for substitute selection?

A: All active substitute parts are ROHS3 compliant, addressing environmental and regulatory requirements. The obsolete IRF9Z34NSTRR is non-compliant. For new designs and production continuity, ROHS3 compliant parts are required to meet current manufacturing standards and customer specifications.

Q: Can IRF9Z34NSTRLPBF be used in applications originally designed for higher voltage MOSFETs?

A: No. The 55V Vdss rating of IRF9Z34NSTRLPBF is fixed and cannot be exceeded. For applications requiring higher voltage capability, FQB22P10TM (100V) or Vishay variants (60V) must be selected. Exceeding the Vdss rating results in device failure.

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