IRF9Z34 Equivalent & Substitute Parts Reference

Part Overview

The IRF9Z34 is a P-Channel MOSFET transistor manufactured by Vishay Siliconix, rated for 60V, 18A, and provided in a TO-220AB through-hole package. It is classified under Transistors, FETs, MOSFETs. The product status is Obsolete, making it necessary to identify alternative models for sourcing, design continuity, and replacement in engineering applications. Suitable substitutes must align with the defined electrical and mechanical parameters for reliable interchangeability.

Key Parameters

Parameter	IRF9Z34 Value
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Continuous Drain Current (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25V
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
Part Status	Obsolete

Substitute Part Grouping Explanation

The substitution logic is strictly based on the following parameters: FET type, drain to source voltage (Vdss), continuous drain current (Id), drive voltage, Rds(on), gate threshold voltage (Vgs(th)), gate charge (Qg), maximum gate source voltage (Vgs(Max)), input capacitance (Ciss), power dissipation, operating temperature, mounting type, and package compatibility. Substitutes listed below are compliant with these requirements and fall within the same product category: P-Channel MOSFETs for through-hole TO-220 packages.

Parameter Comparison

Part Number	Manufacturer	FET Type	Vdss	Id (@ 25°C)	Drive Voltage	Rds On (Max)	Vgs(th) (Max)	Gate Charge (Qg)	Vgs (Max)	Input Capacitance (Ciss)	Power Dissipation	Operating Temp	Mounting Type	Package / Case	RoHS Status	Part Status
IRF9Z34	Vishay Siliconix	P-Channel	60 V	18A (Tc)	10V	140mOhm @ 11A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	1100 pF @ 25 V	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	RoHS non-compliant	Obsolete
IRF9Z34PBF	Vishay Siliconix	P-Channel	60 V	18A (Tc)	10V	140mOhm @ 11A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	1100 pF @ 25 V	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Active
FQP17P06	onsemi	P-Channel	60 V	17A (Tc)	10V	120mOhm @ 8.5A, 10V	4V @ 250µA	27 nC @ 10 V	±25V	900 pF @ 25 V	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Active
IRF9Z34NPBF	Infineon Technologies	P-Channel	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Active
STP10P6F6	STMicroelectronics	P-Channel	60 V	10A (Tc)	10V	160mOhm @ 5A, 10V	4V @ 250µA	6.4 nC @ 10 V	±20V	340 pF @ 48 V	30W (Tc)	175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Obsolete

Engineering Selection Recommendations

Selection should be based on part status, RoHS compliance, and certifications as per provided data. The IRF9Z34PBF (Vishay Siliconix), FQP17P06 (onsemi), and IRF9Z34NPBF (Infineon Technologies) are RoHS compliant and have an active product status, aligning with industry compliance requirements and availability. STP10P6F6 (STMicroelectronics) is RoHS compliant but is obsolete. IRF9Z34 is obsolete and RoHS non-compliant.

Frequently Asked Questions (FAQ)

Q1: What are the substitution criteria for IRF9Z34?
A1: Substitute MOSFETs must match the P-Channel type, voltage rating, continuous drain current, drive voltage, threshold voltage, package (TO-220-3), and mounting type (through hole).

Q2: Are there packaging or mounting differences to be considered?
A2: All substitute parts provided use through-hole mounting and the TO-220-3 package.

Q3: How does product status affect substitution?
A3: Active product status ensures ongoing manufacturer support and availability, which is preferable for new designs and replacements.

Q4: Does RoHS compliance impact engineering selection?
A4: RoHS compliant substitutes are preferable for designs requiring environmental certification adherence.

Q5: Can input capacitance and gate charge variations affect compatibility?
A5: Substitute selection is strictly based on provided key parameters. Differences in gate charge and input capacitance are acknowledged but do not prevent substitution within this group.

Q6: Is it required to match the exact manufacturer or base product number?
A6: Direct manufacturer substitutes and functionally equivalent alternatives within the specified category are valid as long as all provided parameters are met.

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