IRF9Z24STRR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9Z24STRR is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 11A continuous drain current. The device is packaged in a Surface Mount TO-263 (D2PAK) configuration and is designed for applications requiring moderate power dissipation in a compact form factor.

The IRF9Z24STRR is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements. Active alternatives with identical or superior electrical characteristics are available from the same manufacturer and qualified alternative suppliers.

Substiute Parts

IRF9Z24STRR
Vishay SiliconixIn Stock: 2017IRF9Z24STRR Datasheet
IRF9Z24STRR
Current Part
IRF9Z24STRLPBF
Vishay SiliconixIn Stock: 5508IRF9Z24STRLPBF Datasheet
IRF9Z24STRLPBF
Parametric Equivalent
IRF9Z24STRRPBF
Vishay SiliconixIn Stock: 8375IRF9Z24STRRPBF Datasheet
IRF9Z24STRRPBF
Parametric Equivalent
SIHF9Z24STRR-GE3
Vishay SiliconixIn Stock: 2403SIHF9Z24STRR-GE3 Datasheet
SIHF9Z24STRR-GE3
Parametric Equivalent
SPB18P06PGATMA1
Infineon TechnologiesIn Stock: 2771SPB18P06PGATMA1 Datasheet
SPB18P06PGATMA1
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 11 A (Tc)
On-State Resistance (Rds On) @ 6.6A, 10V 280 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 19 nC
Input Capacitance (Ciss) @ 25V 570 pF
Power Dissipation (Max) 3.7 (Ta), 60 (Tc) W
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Surface Mount
Package TO-263-3, D2PAK
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRF9Z24STRR are classified into two categories based on electrical and mechanical compatibility:

Category 1: Direct Parametric Equivalents (Vishay Siliconix)

Parts IRF9Z24STRLPBF, IRF9Z24STRRPBF, and SIHF9Z24STRR-GE3 are direct parametric equivalents. These devices maintain identical electrical specifications across all critical parameters: 60V Vdss, 11A continuous drain current, 280mOhm Rds On, 4V gate threshold voltage, 19nC gate charge, and 570pF input capacitance. All three parts are housed in the same TO-263 (D2PAK) package. The primary distinction is product status and RoHS compliance. IRF9Z24STRLPBF and IRF9Z24STRRPBF are Active products with ROHS3 compliance, while the main part (IRF9Z24STRR) is Obsolete and RoHS non-compliant. SIHF9Z24STRR-GE3 is also Active and ROHS3 compliant.

Category 2: Higher Performance Alternative (Infineon Technologies)

Part SPB18P06PGATMA1 is a higher-performance alternative from Infineon Technologies. While maintaining the same 60V Vdss rating and TO-263 package, this device offers superior current handling (18.7A versus 11A) and significantly lower on-state resistance (130mOhm versus 280mOhm). The SPB18P06PGATMA1 is suitable for applications where the IRF9Z24STRR specifications are met but additional performance margin is required.

Substitution eligibility is determined by the following key parameters: Drain-to-Source Voltage (Vdss), Continuous Drain Current (Id), On-State Resistance (Rds On), Gate Threshold Voltage (Vgs(th)), Operating Temperature Range, and Package Type (TO-263 D2PAK).

Parameter Comparison

Parameter IRF9Z24STRR IRF9Z24STRLPBF IRF9Z24STRRPBF SIHF9Z24STRR-GE3 SPB18P06PGATMA1
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss (V) 60 60 60 60 60
Id @ 25°C (A) 11 (Tc) 11 (Tc) 11 (Tc) 11 (Tc) 18.7 (Ta)
Rds On @ 10V (mOhm) 280 @ 6.6A 280 @ 6.6A 280 @ 6.6A 280 @ 6.6A 130 @ 13.2A
Vgs(th) @ Id (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 1mA
Qg @ 10V (nC) 19 19 19 19 28
Ciss @ 25V (pF) 570 570 570 570 860
Power Dissipation (W) 3.7 (Ta), 60 (Tc) 3.7 (Ta), 60 (Tc) 3.7 (Ta), 60 (Tc) 3.7 (Ta), 60 (Tc) 81.1 (Ta)
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK
Product Status Obsolete Active Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance)

IRF9Z24STRLPBF and IRF9Z24STRRPBF are recommended as primary substitutes for the obsolete IRF9Z24STRR. Both parts are manufactured by Vishay Siliconix and provide identical electrical characteristics. IRF9Z24STRRPBF offers higher inventory availability (8300 units) compared to IRF9Z24STRLPBF (5410 units). Both parts are Active products with ROHS3 compliance, addressing regulatory requirements that the original part does not meet. SIHF9Z24STRR-GE3 is an additional equivalent option with 2342 units in stock and Active status with ROHS3 compliance.

For Enhanced Performance Applications

SPB18P06PGATMA1 from Infineon Technologies is suitable for applications where the IRF9Z24STRR electrical specifications are satisfied but additional performance margin is beneficial. This device provides 70% higher continuous drain current (18.7A versus 11A) and 54% lower on-state resistance (130mOhm versus 280mOhm), resulting in reduced power dissipation and improved thermal performance. The SPB18P06PGATMA1 maintains the same 60V Vdss rating, TO-263 package, and operating temperature range. Gate charge increases to 28nC and input capacitance to 860pF, which may affect switching characteristics in gate-drive-sensitive applications. This part is Active with ROHS3 compliance and 2717 units in stock.

Compliance Considerations

All recommended substitutes are ROHS3 compliant, addressing environmental and regulatory requirements. The original IRF9Z24STRR is RoHS non-compliant. All substitute parts maintain MSL Level 1 (Unlimited) moisture sensitivity classification, ensuring consistent handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can IRF9Z24STRLPBF be used as a direct replacement for IRF9Z24STRR?

A: Yes. IRF9Z24STRLPBF is a direct parametric equivalent with identical electrical specifications: 60V Vdss, 11A continuous drain current, 280mOhm Rds On, and TO-263 package. The primary differences are product status (Active versus Obsolete) and RoHS compliance (ROHS3 versus non-compliant). No circuit modifications are required.

Q: What is the difference between IRF9Z24STRRPBF and IRF9Z24STRLPBF?

A: Both parts are parametrically identical with the same electrical specifications and package. The primary distinction is packaging format: IRF9Z24STRRPBF is supplied in Tape & Reel (TR) format with higher inventory availability (8300 units), while IRF9Z24STRLPBF is also supplied in Tape & Reel format with 5410 units available. Both are Active products with ROHS3 compliance.

Q: Can SPB18P06PGATMA1 replace IRF9Z24STRR in all applications?

A: SPB18P06PGATMA1 maintains the same 60V Vdss rating and TO-263 package, making it mechanically compatible. However, the higher continuous drain current (18.7A versus 11A), lower on-state resistance (130mOhm versus 280mOhm), increased gate charge (28nC versus 19nC), and higher input capacitance (860pF versus 570pF) may affect circuit performance in gate-drive-sensitive or switching-frequency-critical applications. Electrical verification is required for applications where these parameters are critical.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts are housed in the TO-263-3 (D2PAK) package with identical pinout and mechanical dimensions. No PCB layout modifications are required for direct substitution.

Q: What is the inventory status of substitute parts?

A: IRF9Z24STRRPBF has the highest availability with 8300 units in stock. IRF9Z24STRLPBF has 5410 units available. SIHF9Z24STRR-GE3 has 2342 units in stock. SPB18P06PGATMA1 (Infineon) has 2717 units available. All parts are classified as New Original In Stock.

Q: Do all substitute parts meet RoHS compliance requirements?

A: Yes. IRF9Z24STRLPBF, IRF9Z24STRRPBF, SIHF9Z24STRR-GE3, and SPB18P06PGATMA1 are all ROHS3 compliant. The original IRF9Z24STRR is RoHS non-compliant. Substitution addresses regulatory compliance requirements for new designs and production.

Q: What is the moisture sensitivity level for these parts?

A: All parts, including the original IRF9Z24STRR and all substitutes, are classified as MSL Level 1 (Unlimited). This classification indicates no moisture sensitivity limitations and no special storage or handling requirements beyond standard component handling practices.

Q: How do gate charge and input capacitance differences affect circuit design?

A: Gate charge (Qg) and input capacitance (Ciss) affect gate drive requirements and switching speed. The Vishay equivalents (IRF9Z24STRLPBF, IRF9Z24STRRPBF, SIHF9Z24STRR-GE3) maintain identical values (19nC and 570pF respectively) to the original part. SPB18P06PGATMA1 has higher values (28nC and 860pF), which may require gate driver adjustment in high-frequency switching applications. Existing gate drive circuits designed for the IRF9Z24STRR will operate with the Vishay equivalents without modification.

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