IRF9Z14STRR MOSFET P-Channel Equivalent & Substitute Parts

Part Overview

The IRF9Z14STRR is an active P-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 6.7A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring moderate voltage and current switching capabilities. This part is currently in active production status with 876 pieces in stock.

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatible package configurations. Substitutes are selected when the original part becomes unavailable, when alternative compliance certifications are required, or when design flexibility permits higher performance specifications within the same form factor.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	6.7	A (Tc)
Rds On (Max) @ Id, Vgs	500	mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	270	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 43 (Tc)	W
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF9Z14STRR are identified through parametric equivalence analysis. The substitution logic is based on the following criteria:

Primary Equivalence Criteria:

FET Type: P-Channel configuration
Package Type: Surface Mount TO-263 (D2PAK) form factor
Drain to Source Voltage (Vdss): Equal to or greater than 60V
Continuous Drain Current (Id): Equal to or greater than 6.7A
Gate Threshold Voltage (Vgs(th)): Matching specification at 4V @ 250µA
Maximum Gate Voltage (Vgs): ±20V compatibility
Operating Temperature Range: Minimum -55°C to 175°C

Substitute Categories:

Parametric Equivalent (Direct Replacement): IRF9Z14STRLPBF — Identical electrical specifications with identical package configuration. Differs only in packaging format (Tape & Reel) and RoHS compliance status (ROHS3 Compliant vs. RoHS non-compliant).
Performance Upgrade Substitute (Higher Specification): IRF5210STRLPBF — Exceeds base specifications in voltage rating (100V vs. 60V), current capacity (38A vs. 6.7A), and power dissipation (170W vs. 43W). Maintains P-Channel configuration, D2PAK package, and gate threshold voltage compatibility. Manufactured by Infineon Technologies under the HEXFET® series.

Parameter Comparison

Parameter	IRF9Z14STRR	IRF9Z14STRLPBF	IRF5210STRLPBF	Unit
Manufacturer	Vishay Siliconix	Vishay Siliconix	Infineon Technologies	—
FET Type	P-Channel	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	60	60	100	V
Current - Continuous Drain (Id) @ 25°C	6.7	6.7	38	A (Tc)
Rds On (Max) @ Id, Vgs	500 @ 4A, 10V	500 @ 4A, 10V	60 @ 38A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	12 @ 10V	12 @ 10V	230 @ 10V	nC
Vgs (Max)	±20	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	270 @ 25V	270 @ 25V	2780 @ 25V	pF
Power Dissipation (Max)	3.7 (Ta), 43 (Tc)	3.7 (Ta), 43 (Tc)	3.1 (Ta), 170 (Tc)	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Active	Active	Active	—

Engineering Selection Recommendations

IRF9Z14STRLPBF Selection Criteria:

The IRF9Z14STRLPBF is a direct parametric equivalent to the IRF9Z14STRR with identical electrical specifications and package configuration. This substitute is appropriate when:

ROHS3 compliance certification is required for the application or supply chain
Tape & Reel packaging format is preferred for automated assembly processes
Electrical performance requirements are identical to the original specification
The part is sourced from the same manufacturer (Vishay Siliconix) with established supply chain continuity

Both parts maintain active product status and unlimited moisture sensitivity rating (MSL 1).

IRF5210STRLPBF Selection Criteria:

The IRF5210STRLPBF is a performance upgrade substitute manufactured by Infineon Technologies. This part is appropriate when:

Higher voltage margin is required (100V vs. 60V Vdss)
Higher continuous current capacity is needed (38A vs. 6.7A Id)
Improved thermal performance is beneficial (170W vs. 43W Tc power dissipation)
Lower on-resistance is advantageous (60 mOhm vs. 500 mOhm Rds On)
ROHS3 compliance is required
The application circuit design accommodates the higher gate charge (230 nC vs. 12 nC) and input capacitance (2780 pF vs. 270 pF)
Operating temperature range of -55°C to 150°C is acceptable (vs. -55°C to 175°C for IRF9Z14STRR)

The IRF5210STRLPBF maintains P-Channel configuration, D2PAK package compatibility, and gate threshold voltage matching, enabling direct PCB layout compatibility with appropriate circuit design verification.

Frequently Asked Questions (FAQ)

Q: Can IRF9Z14STRLPBF be used as a direct replacement for IRF9Z14STRR without circuit modification?

A: Yes. The IRF9Z14STRLPBF is a parametric equivalent with identical electrical specifications and package configuration. The only differences are packaging format (Tape & Reel vs. bulk) and RoHS compliance status. No circuit modification is required.

Q: What are the key differences between IRF9Z14STRR and IRF5210STRLPBF?

A: The IRF5210STRLPBF provides higher voltage rating (100V vs. 60V), higher current capacity (38A vs. 6.7A), significantly lower on-resistance (60 mOhm vs. 500 mOhm), and higher power dissipation capability (170W vs. 43W). Gate threshold voltage and maximum gate voltage remain compatible. The IRF5210STRLPBF has higher gate charge and input capacitance, which may affect switching speed and gate drive requirements.

Q: Are all three parts compatible with the same PCB layout?

A: Yes. All three parts use the TO-263-3 (D2PAK) package with identical pinout and mechanical dimensions. PCB layout compatibility is maintained across all three parts.

Q: What is the significance of RoHS compliance differences?

A: The IRF9Z14STRR is RoHS non-compliant, while IRF9Z14STRLPBF and IRF5210STRLPBF are ROHS3 compliant. ROHS3 compliance is required for applications subject to European Union Restriction of Hazardous Substances regulations or customer specifications mandating RoHS certification.

Q: Can IRF5210STRLPBF be used in applications designed for IRF9Z14STRR?

A: The IRF5210STRLPBF can be used in applications designed for IRF9Z14STRR when the circuit design accommodates higher gate charge and input capacitance values. The higher voltage and current ratings provide design margin. However, gate drive circuit verification is necessary to confirm adequate drive capability for the increased gate charge (230 nC vs. 12 nC).

Q: What is the inventory status of these parts?

A: IRF9Z14STRR has 876 pieces in stock. IRF9Z14STRLPBF has 1454 pieces in stock. IRF5210STRLPBF has 36088 pieces in stock.

Q: Are there any operating temperature range limitations when substituting parts?

A: The IRF9Z14STRR and IRF9Z14STRLPBF support -55°C to 175°C operating temperature range. The IRF5210STRLPBF supports -55°C to 150°C. Applications requiring operation above 150°C must use IRF9Z14STRR or IRF9Z14STRLPBF.

Q: What packaging formats are available for each part?

A: IRF9Z14STRR is available in standard packaging. IRF9Z14STRLPBF is available in Tape & Reel (TR) format. IRF5210STRLPBF is available in Cut Tape (CT) and Digi-Reel® format. Packaging selection depends on assembly process requirements and order quantities.

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