IRF9Z10 Equivalent & Substitute Parts Reference

Part Overview

The IRF9Z10 is a P-Channel MOSFET manufactured by Vishay Siliconix, categorized under Transistors, FETs, MOSFETs. It features a 60 V drain-to-source voltage, 6.7A continuous drain current, and a TO-220AB through-hole package. The part is currently active, but is RoHS non-compliant. Selecting alternative models is necessary when sourcing for RoHS-compliant requirements or for additional inventory availability. Substitution is strictly determined by matching electrical and mechanical parameters.

Key Parameters

Manufacturer Part Number	Manufacturer	Category	Description	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)	Product Status
IRF9Z10	Vishay Siliconix	Transistors, FETs, MOSFETs	P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB	60 V	6.7A (Tc)	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3	RoHS non-compliant	1 (Unlimited)	Active

Substitute Part Grouping Explanation

Substitute qualification is established by strict equivalence of category, P-channel MOSFET technology, drain-to-source voltage, continuous drain current, Rds(on), gate threshold voltage, gate charge, maximum gate-source voltage, input capacitance, power dissipation, operating temperature range, mounting type, and mechanical package (TO-220AB, TO-220-3). RoHS and inventory status are listed for compliance-based selection.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Category	Description	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)	Product Status
IRF9Z10	Vishay Siliconix	Transistors, FETs, MOSFETs	P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB	60 V	6.7A (Tc)	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3	RoHS non-compliant	1 (Unlimited)	Active
IRF9Z10PBF	Vishay Siliconix	Transistors, FETs, MOSFETs	P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB	60 V	6.7A (Tc)	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3	ROHS3 Compliant	1 (Unlimited)	Active
IRF9Z14PBF	Vishay Siliconix	Transistors, FETs, MOSFETs	P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB	60 V	6.7A (Tc)	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3	ROHS3 Compliant	1 (Unlimited)	Active

Engineering Selection Recommendations

For applications requiring RoHS compliance, IRF9Z10PBF and IRF9Z14PBF are valid substitutes for IRF9Z10, as they maintain identical electrical and mechanical specifications and are both ROHS3 Compliant. All listed parts are active and utilize the same package and mounting type, permitting direct substitution for inventory or compliance needs.

Frequently Asked Questions (FAQ)

Q: What are the main criteria for substituting IRF9Z10 MOSFETs?
A: Substitution requires identical drain-to-source voltage (60 V), continuous drain current (6.7A), Rds(on), gate threshold, gate charge, operating temperature, package type (TO-220AB, TO-220-3), and mounting (through-hole).

Q: Are IRF9Z10PBF and IRF9Z14PBF compatible with layouts designed for IRF9Z10?
A: Based on package type and mounting specifications, IRF9Z10PBF and IRF9Z14PBF match the mechanical footprint of IRF9Z10.

Q: Does RoHS compliance affect substitute part selection?
A: Yes. IRF9Z10 is RoHS non-compliant, while IRF9Z10PBF and IRF9Z14PBF are ROHS3 Compliant and suitable for applications with environmental requirements.

Q: Are there any differences in electrical specifications among the listed substitute parts?
A: All provided substitutes share the same electrical parameters—Vdss, Id, Rds(on), gate charge, and capacitance—ensuring equivalence for functional interchange.

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