IRF9910TRPBF Equivalent & Substitute Parts

Part Overview

The IRF9910TRPBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, configured as a 2N-channel logic level gate device with a maximum drain-source voltage rating of 20V and continuous drain current capability of 10A to 12A. The device is housed in an 8-SOIC surface mount package and is part of the HEXFET® series.

The IRF9910TRPBF is classified as obsolete. Locating equivalent substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this dual MOSFET configuration.

Substiute Parts

IRF9910TRPBF

Infineon TechnologiesIn Stock: 25375IRF9910TRPBF Datasheet

Current PartRFQ

IRF8910TRPBF

Infineon TechnologiesIn Stock: 19321IRF8910TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF9910TRPBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-Source Voltage (Vdss): Must equal 20V
• Configuration: Must be 2 N-Channel (Dual) MOSFET array
• Gate Feature: Must be Logic Level Gate
• Operating Temperature Range: Must span -55°C to 150°C
• Package Type: Must be 8-SOIC surface mount

Mechanical Equivalence Criteria:

• Package dimensions: 8-SOIC (0.154", 3.90mm Width)
• Mounting type: Surface Mount
• Supplier device package: 8-SO

Compliance Equivalence Criteria:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)
• REACH Status: REACH Unaffected

The IRF8910TRPBF meets all substitution criteria as a manufacturer-recommended equivalent. While the IRF8910TRPBF specifies a continuous drain current of 10A (compared to the IRF9910TRPBF's 10A/12A rating), it maintains identical voltage ratings, package configuration, and compliance certifications, making it a valid substitute for applications within the 10A continuous drain current specification.

Parameter Comparison

Engineering Selection Recommendations

The IRF8910TRPBF is the manufacturer-recommended substitute for the obsolete IRF9910TRPBF. Selection of this substitute is based on the following engineering factors:

Product Status Justification: The IRF9910TRPBF is classified as obsolete, making continued procurement from original inventory sources unsustainable. The IRF8910TRPBF maintains active product status with Infineon Technologies, ensuring long-term availability and supply chain continuity.

Electrical Compatibility: Both devices share identical voltage ratings (20V Vdss), gate threshold characteristics (2.55V @ 250µA), gate charge specifications (11nC @ 4.5V), and maximum power dissipation (2W). The dual N-channel configuration and logic level gate feature are preserved in the substitute.

Mechanical Compatibility: Pin-for-pin compatibility is maintained through identical 8-SOIC package geometry (0.154", 3.90mm Width) and surface mount configuration. No PCB layout modifications are required.

Compliance Alignment: Both parts maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity classification, and REACH Unaffected status, ensuring regulatory and environmental standard adherence.

Current Rating Consideration: The IRF8910TRPBF is rated for 10A continuous drain current, compared to the IRF9910TRPBF's 10A/12A specification. Applications requiring continuous drain current exceeding 10A must conduct thermal analysis to confirm the substitute's suitability, as the higher on-resistance (13.4mOhm vs. 9.3mOhm) will result in increased power dissipation.

Frequently Asked Questions (FAQ)

Q: Can the IRF8910TRPBF be used as a direct replacement for the IRF9910TRPBF without PCB modifications?

A: Yes. Both devices use identical 8-SOIC package geometry with 0.154" (3.90mm) width. Pin-to-pin compatibility is maintained, and no PCB layout changes are required for mechanical and electrical integration.

Q: What is the primary difference between the IRF9910TRPBF and IRF8910TRPBF?

A: The IRF8910TRPBF is rated for 10A continuous drain current, while the IRF9910TRPBF is rated for 10A and 12A. Additionally, the IRF8910TRPBF has a higher on-resistance specification (13.4mOhm @ 10A, 10V versus 9.3mOhm @ 12A, 10V). The IRF8910TRPBF is actively manufactured, whereas the IRF9910TRPBF is obsolete.

Q: Are there any thermal performance differences between these two devices?

A: The IRF8910TRPBF exhibits higher on-resistance at the 10A operating point, which results in increased power dissipation compared to the IRF9910TRPBF at equivalent current levels. Applications operating at or near 10A continuous drain current should evaluate thermal management to ensure the substitute remains within acceptable junction temperature limits (-55°C to 150°C TJ).

Q: Do both parts meet the same environmental and compliance standards?

A: Yes. Both the IRF9910TRPBF and IRF8910TRPBF are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity classification, and maintain REACH Unaffected status. No compliance-related design changes are necessary when substituting between these parts.

Q: What is the gate charge specification for the IRF8910TRPBF?

A: The gate charge (Qg) for the IRF8910TRPBF is 11nC @ 4.5V, identical to the IRF9910TRPBF. This specification ensures equivalent switching characteristics and gate drive requirements.

Q: Is the input capacitance difference between these parts significant?

A: The IRF8910TRPBF has an input capacitance (Ciss) of 960pF @ 10V, compared to 900pF @ 10V for the IRF9910TRPBF. This 60pF difference is minor and does not typically require circuit redesign. Gate drive timing and switching performance remain substantially equivalent.

Q: What inventory status should be expected for the IRF8910TRPBF?

A: The IRF8910TRPBF maintains active product status with Infineon Technologies and is available through authorized distributors. The IRF9910TRPBF, classified as obsolete, has limited remaining inventory and is not recommended for new procurement.