IRF9610 Equivalent & Substitute Parts

Part Overview

The IRF9610 is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 200V drain-to-source voltage with a continuous drain current of 1.8A at 25°C. The device is packaged in a Through Hole TO-220AB configuration and dissipates a maximum of 20W. The IRF9610 is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	1.8	A (Tc)
On-State Resistance (Rds On) @ 900mA, 10V	3	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	20	W (Tc)
Operating Temperature Range	−55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IRF9610 is determined by electrical and mechanical parameter equivalence. The substitute part must satisfy all of the following criteria:

FET Type: P-Channel topology
Drain to Source Voltage (Vdss): 200V minimum rating
Continuous Drain Current (Id): 1.8A or greater at 25°C
On-State Resistance (Rds On): 3Ω or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): 4V maximum at 250µA
Power Dissipation: 20W or greater
Operating Temperature Range: −55°C to 150°C or wider
Mounting Type: Through Hole
Package / Case: TO-220-3 (TO-220AB physical form)

The IRF9610PBF meets all electrical and mechanical requirements for direct substitution. The primary distinction between the main part and its substitute is product status and compliance certification.

Parameter Comparison

Parameter	IRF9610	IRF9610PBF	Unit
Manufacturer	Vishay Siliconix	Vishay Siliconix	—
FET Type	P-Channel	P-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	200	V
Continuous Drain Current (Id) @ 25°C	1.8	1.8	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ 900mA, 10V	3	3	Ω
Vgs(th) (Max) @ 250µA	4	4	V
Gate Charge (Qg) (Max) @ 10V	11	11	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ 25V	170	170	pF
Power Dissipation (Max)	20	20	W (Tc)
Operating Temperature Range	−55 to 150	−55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—
Supplier Device Package	TO-220AB	TO-220AB	—
ECCN	EAR99	EAR99	—
HTSUS	8541.29.0095	8541.29.0095	—

Engineering Selection Recommendations

The IRF9610 is classified as obsolete. The IRF9610PBF is the direct equivalent part and is classified as active with current manufacturing status.

Product Status Consideration: The IRF9610PBF is actively manufactured and supported by Vishay Siliconix, whereas the IRF9610 is no longer in production. For new designs and ongoing procurement, the IRF9610PBF is the appropriate selection.

Compliance Consideration: The IRF9610PBF is RoHS3 compliant and REACH affected, meeting current regulatory requirements for electronic components in most jurisdictions. The original IRF9610 is RoHS non-compliant and REACH unaffected, reflecting its obsolete status.

Electrical and Mechanical Equivalence: All electrical parameters, thermal ratings, and mechanical dimensions are identical between the IRF9610 and IRF9610PBF. Pin configuration, gate drive requirements, and thermal performance are unchanged.

Packaging: Both parts are supplied in TO-220AB through-hole packages. The IRF9610PBF is supplied in tube packaging, whereas the original IRF9610 packaging format is not specified in the provided data.

Frequently Asked Questions (FAQ)

Q: Can the IRF9610PBF be used as a direct replacement for the IRF9610?

A: Yes. The IRF9610PBF is electrically and mechanically identical to the IRF9610. All electrical parameters, including Vdss, Id, Rds On, Vgs(th), and power dissipation, are equivalent. Both devices use the TO-220AB package with identical pin configuration.

Q: Why is the IRF9610 marked as obsolete?

A: The IRF9610 has been discontinued by the manufacturer. The IRF9610PBF is the active production equivalent and should be used for all new procurements and designs.

Q: What is the difference between IRF9610 and IRF9610PBF?

A: The electrical and thermal specifications are identical. The primary differences are product status (obsolete versus active), RoHS compliance (non-compliant versus RoHS3 compliant), and REACH status (unaffected versus affected). The IRF9610PBF is supplied in tube packaging.

Q: Are there any circuit design changes required when switching from IRF9610 to IRF9610PBF?

A: No circuit design changes are required. Gate drive voltage, threshold voltage, on-state resistance, and thermal characteristics are identical. The devices are pin-for-pin compatible in TO-220AB configuration.

Q: What is the operating temperature range for both parts?

A: Both the IRF9610 and IRF9610PBF operate from −55°C to 150°C junction temperature (TJ).

Q: Can these parts be used in high-frequency switching applications?

A: Both parts have identical gate charge (Qg) of 11 nC at 10V and input capacitance (Ciss) of 170 pF at 25V. Switching frequency capability is determined by the gate drive circuit and thermal management design, not by the part selection between these two equivalents.

Q: Is the IRF9610PBF suitable for new product designs?

A: Yes. The IRF9610PBF is actively manufactured, RoHS3 compliant, and REACH affected, making it suitable for new designs requiring current regulatory compliance.

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