IRF9540STRL P-Channel MOSFET 100V 19A Equivalent & Substitute Parts

Part Overview

The IRF9540STRL is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 19A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete product status. Due to its obsolete classification and limited availability, identification of equivalent and substitute parts is necessary for ongoing design support, production continuity, and component procurement.

Substiute Parts

IRF9540STRL
Vishay SiliconixIn Stock: 761IRF9540STRL Datasheet
IRF9540STRL
Current Part
IRF9540STRLPBF
Vishay SiliconixIn Stock: 70487IRF9540STRLPBF Datasheet
IRF9540STRLPBF
Parametric Equivalent
IRF9540STRR
Vishay SiliconixIn Stock: 1139IRF9540STRR Datasheet
IRF9540STRR
Parametric Equivalent
FQB22P10TM
onsemiIn Stock: 15277FQB22P10TM Datasheet
FQB22P10TM
MFR Recommended
IRF9530NSTRLPBF
Infineon TechnologiesIn Stock: 21246IRF9530NSTRLPBF Datasheet
IRF9530NSTRLPBF
MFR Recommended
IRF9540NSTRLPBF
Infineon TechnologiesIn Stock: 41464IRF9540NSTRLPBF Datasheet
IRF9540NSTRLPBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 19 A
On-State Resistance (Rds On Max) @ Id, Vgs 200 mOhm @ 11A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 61 nC @ 10V
Maximum Gate Voltage (Vgs Max) ±20 V
Input Capacitance (Ciss Max) @ Vds 1400 pF @ 25V
Power Dissipation (Max) 3.7W (Ta), 150W (Tc) W
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Surface Mount
Package TO-263 (D2PAK)
RoHS Status Non-compliant

Substitute Part Grouping Explanation

Substitution of the IRF9540STRL is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel configuration
  • Drain-to-Source Voltage (Vdss): 100V minimum rating
  • Continuous Drain Current (Id): 19A or greater at 25°C
  • On-State Resistance (Rds On): Electrical performance compatibility at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): Compatibility with 4V maximum specification
  • Package Type: Surface mount TO-263 (D2PAK) form factor
  • Operating Temperature Range: -55°C to 175°C minimum

Substitute Classification:

Parametric Equivalents maintain identical or equivalent electrical specifications and are direct functional replacements within the same package footprint.

Manufacturer Recommended Substitutes offer enhanced or alternative electrical characteristics while maintaining voltage and package compatibility. These parts may provide improved performance metrics such as lower on-state resistance, higher current capability, or enhanced thermal performance.

Parameter Comparison

Parameter IRF9540STRL (Main) IRF9540STRLPBF IRF9540STRR FQB22P10TM IRF9530NSTRLPBF IRF9540NSTRLPBF
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix onsemi Infineon Technologies Infineon Technologies
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss (V) 100 100 100 100 100 100
Id @ 25°C (A) 19 19 19 22 14 23
Rds On Max (mOhm) 200 @ 11A, 10V 200 @ 11A, 10V 200 @ 11A, 10V 125 @ 11A, 10V 200 @ 8.4A, 10V 117 @ 14A, 10V
Vgs(th) Max (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA
Qg Max (nC) 61 @ 10V 61 @ 10V 61 @ 10V 50 @ 10V 58 @ 10V 110 @ 10V
Vgs Max (V) ±20 ±20 ±20 ±30 ±20 ±20
Ciss Max (pF) 1400 @ 25V 1400 @ 25V 1400 @ 25V 1500 @ 25V 760 @ 25V 1450 @ 25V
Power Dissipation (W) 3.7 (Ta), 150 (Tc) 3.7 (Ta), 150 (Tc) 3.7 (Ta), 150 (Tc) 3.75 (Ta), 125 (Tc) 3.8 (Ta), 79 (Tc) 3.1 (Ta), 110 (Tc)
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 150
Package TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK) D2PAK D2PAK
Product Status Obsolete Active Active Active Active Active
RoHS Status Non-compliant ROHS3 Compliant Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRF9540STRLPBF (Vishay Siliconix)

This part is a parametric equivalent to the IRF9540STRL with identical electrical specifications. The primary distinction is product status: IRF9540STRLPBF is active and widely available with 70,400 units in stock. This part carries ROHS3 compliance and REACH affected status, making it suitable for applications requiring regulatory compliance. The packaging designation includes Cut Tape (CT) and Digi-Reel® options, supporting both manual and automated assembly processes. Selection of this part eliminates obsolescence risk while maintaining full electrical compatibility.

IRF9540STRR (Vishay Siliconix)

This part maintains identical electrical specifications to the IRF9540STRL and is classified as active product status. Inventory availability is 1,046 units. This part retains the non-compliant RoHS status of the original device. The IRF9540STRR serves as a direct functional replacement where RoHS compliance is not a design requirement and where the original part's characteristics must be preserved exactly.

FQB22P10TM (onsemi)

This manufacturer-recommended substitute is a P-Channel MOSFET with 100V Vdss rating and enhanced continuous drain current of 22A, exceeding the IRF9540STRL specification of 19A. The on-state resistance is reduced to 125 mOhm at 11A and 10V, compared to 200 mOhm in the original part, providing improved thermal performance. Gate charge is reduced to 50 nC, enabling faster switching characteristics. Maximum gate voltage is increased to ±30V. Power dissipation at case temperature is 125W compared to 150W in the original. This part is ROHS3 compliant and REACH unaffected. Selection is appropriate for applications requiring enhanced current handling or reduced on-state losses.

IRF9530NSTRLPBF (Infineon Technologies)

This manufacturer-recommended substitute is a P-Channel MOSFET with 100V Vdss rating and reduced continuous drain current of 14A, below the IRF9540STRL specification of 19A. On-state resistance is 200 mOhm at 8.4A and 10V. Input capacitance is significantly reduced to 760 pF. Power dissipation at case temperature is 79W. This part is ROHS3 compliant and REACH unaffected. Selection is appropriate for applications where the 19A current capability of the original part exceeds design requirements and where reduced input capacitance provides circuit advantages.

IRF9540NSTRLPBF (Infineon Technologies)

This manufacturer-recommended substitute is a P-Channel MOSFET with 100V Vdss rating and enhanced continuous drain current of 23A, exceeding the IRF9540STRL specification of 19A. On-state resistance is reduced to 117 mOhm at 14A and 10V, providing improved thermal performance. Gate charge is increased to 110 nC. Input capacitance is 1,450 pF. Power dissipation at case temperature is 110W. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original part's maximum. This part is ROHS3 compliant and REACH unaffected. Selection is appropriate for applications requiring enhanced current handling and reduced on-state losses, provided the maximum operating temperature of 150°C is acceptable.

Frequently Asked Questions (FAQ)

Q: Can IRF9540STRLPBF be used as a direct replacement for IRF9540STRL?

A: Yes. IRF9540STRLPBF is a parametric equivalent with identical electrical specifications: 100V Vdss, 19A continuous drain current, 200 mOhm on-state resistance, and TO-263 (D2PAK) package. The primary difference is product status (active versus obsolete) and regulatory compliance (ROHS3 compliant versus non-compliant). No circuit modifications are required.

Q: What is the difference between IRF9540STRLPBF and IRF9540NSTRLPBF?

A: Both parts share the same base product number IRF9540 and 100V Vdss rating. IRF9540STRLPBF (Vishay Siliconix) provides 19A continuous drain current with 200 mOhm on-state resistance. IRF9540NSTRLPBF (Infineon Technologies) provides 23A continuous drain current with 117 mOhm on-state resistance, offering improved current handling and reduced on-state losses. IRF9540NSTRLPBF has a maximum operating temperature of 150°C versus 175°C for IRF9540STRLPBF.

Q: Is FQB22P10TM suitable for applications requiring exactly 19A continuous drain current?

A: FQB22P10TM is rated for 22A continuous drain current, which exceeds the 19A requirement. This part can be used in applications designed for 19A operation. The enhanced current rating provides design margin. The reduced on-state resistance (125 mOhm versus 200 mOhm) results in lower power dissipation and improved thermal performance.

Q: Can IRF9530NSTRLPBF replace IRF9540STRL in all applications?

A: IRF9530NSTRLPBF is rated for 14A continuous drain current, which is below the IRF9540STRL specification of 19A. This part is suitable only for applications where the actual circuit current requirement does not exceed 14A. The reduced input capacitance (760 pF versus 1400 pF) may provide circuit advantages in switching applications.

Q: What is the significance of RoHS compliance status in selecting a substitute?

A: RoHS compliance is a regulatory requirement in many markets and applications. IRF9540STRL is non-compliant, while IRF9540STRLPBF, FQB22P10TM, IRF9530NSTRLPBF, and IRF9540NSTRLPBF are ROHS3 compliant. Selection of a compliant part is mandatory for applications subject to RoHS regulations. Non-compliant parts may be used only in applications explicitly exempt from RoHS requirements.

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in TO-263 (D2PAK) surface mount package, maintaining footprint compatibility. IRF9540STRLPBF, FQB22P10TM, IRF9530NSTRLPBF, and IRF9540NSTRLPBF are available in Cut Tape (CT) and Digi-Reel® packaging options, supporting both manual and automated assembly. Packaging compatibility ensures direct board-level substitution without layout modifications.

Q: What is the maximum operating temperature difference between substitute parts?

A: IRF9540STRL, IRF9540STRLPBF, IRF9540STRR, FQB22P10TM, and IRF9530NSTRLPBF are rated for -55°C to 175°C operating temperature. IRF9540NSTRLPBF is rated for -55°C to 150°C, representing a 25°C reduction in maximum junction temperature. Applications requiring operation above 150°C must use alternative substitutes.

Q: How does gate charge affect circuit performance in switching applications?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IRF9540STRL specifies 61 nC at 10V. FQB22P10TM provides 50 nC, enabling faster switching with reduced gate drive power. IRF9540NSTRLPBF specifies 110 nC, requiring increased gate drive energy. Selection depends on circuit switching frequency and gate drive capability.

Q: Can parts with different on-state resistance values be used interchangeably?

A: Parts with different on-state resistance values can be used interchangeably from a functional standpoint, provided the continuous drain current rating meets or exceeds circuit requirements. However, on-state resistance directly affects power dissipation and thermal performance. Lower on-state resistance (FQB22P10TM at 125 mOhm, IRF9540NSTRLPBF at 117 mOhm) reduces power loss compared to the original 200 mOhm specification. Circuit thermal analysis should be performed when substituting parts with significantly different on-state resistance values.

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