IRF9540S P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9540S is a P-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 19A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as Obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. The IRF9540S operates across a temperature range of -55°C to 175°C and is RoHS non-compliant, making active alternatives critical for new designs and legacy system maintenance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	19	A (Tc)
On-Resistance (Rds On) @ 11A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	61	nC
Input Capacitance (Ciss) @ 25V	1400	pF
Power Dissipation (Max)	3.7 (Ta), 150 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263 (D2PAK)	—
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRF9540S is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 100V minimum
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package: TO-263 (D2PAK) or equivalent footprint
Operating Temperature Range: Minimum -55°C to 175°C

Performance Parameters (Allowable Variation):

Continuous Drain Current (Id): 19A or greater
On-Resistance (Rds On): 200mOhm or lower at specified conditions
Gate Threshold Voltage (Vgs(th)): 4V at 250µA
Gate Charge (Qg): 61nC or lower at 10V
Input Capacitance (Ciss): 1400pF or lower at 25V

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications) and Manufacturer Recommended Alternatives (enhanced or comparable performance with active product status and RoHS compliance).

Parameter Comparison

Parameter	IRF9540S (Vishay)	IRF9540SPBF (Vishay)	FQB22P10TM (onsemi)	IRF9530NSTRLPBF (Infineon)	IRF9540NSTRLPBF (Infineon)
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Active	Active	Active	Active
Vdss (V)	100	100	100	100	100
Id @ 25°C (A)	19	19	22	14	23
Rds On @ Specified Conditions (mOhm)	200 @ 11A, 10V	200 @ 11A, 10V	125 @ 11A, 10V	200 @ 8.4A, 10V	117 @ 14A, 10V
Vgs(th) @ 250µA (V)	4	4	4	4	4
Qg @ 10V (nC)	61	61	50	58	110
Ciss @ 25V (pF)	1400	1400	1500	760	1450
Power Dissipation (W)	3.7 (Ta), 150 (Tc)	3.7 (Ta), 150 (Tc)	3.75 (Ta), 125 (Tc)	3.8 (Ta), 79 (Tc)	3.1 (Ta), 110 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	D2PAK
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Packaging Type	—	Tube	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®

Engineering Selection Recommendations

IRF9540SPBF (Vishay Siliconix) – Parametric Equivalent

The IRF9540SPBF is an identical electrical equivalent to the IRF9540S with matching specifications across all critical parameters. This part maintains the same 19A continuous drain current, 200mOhm on-resistance, and 100V voltage rating. The primary distinction is product status: IRF9540SPBF is Active and ROHS3 Compliant, whereas the IRF9540S is Obsolete and RoHS non-compliant. This substitute is suitable for direct replacement in existing designs requiring continuity with the original IRF9540S electrical performance. Packaging is supplied in Tube format.

FQB22P10TM (onsemi) – Enhanced Performance Alternative

The FQB22P10TM is a manufacturer-recommended alternative offering enhanced electrical performance. It provides 22A continuous drain current (versus 19A), reduced on-resistance of 125mOhm (versus 200mOhm), and lower gate charge of 50nC (versus 61nC). The FQB22P10TM maintains the 100V voltage rating and D2PAK package compatibility. This device is Active and ROHS3 Compliant. The improved current rating and reduced on-resistance result in lower power dissipation and improved thermal performance, making it suitable for applications requiring higher current capacity or enhanced efficiency. Maximum Vgs rating is ±30V (versus ±20V on the original).

IRF9530NSTRLPBF (Infineon Technologies) – Lower Current Alternative

The IRF9530NSTRLPBF is a manufacturer-recommended substitute with reduced continuous drain current of 14A (versus 19A). This part maintains the 100V voltage rating, 200mOhm on-resistance, and D2PAK package compatibility. It is Active and ROHS3 Compliant. The IRF9530NSTRLPBF features lower input capacitance (760pF versus 1400pF) and reduced gate charge (58nC versus 61nC), resulting in faster switching characteristics. This substitute is appropriate for applications where the 19A current rating exceeds design requirements and lower capacitance is beneficial for switching speed.

IRF9540NSTRLPBF (Infineon Technologies) – Enhanced Current Alternative

The IRF9540NSTRLPBF is a manufacturer-recommended substitute offering 23A continuous drain current (versus 19A) with significantly reduced on-resistance of 117mOhm (versus 200mOhm). This part maintains the 100V voltage rating and D2PAK package compatibility. It is Active and ROHS3 Compliant. The improved current rating and substantially lower on-resistance provide enhanced thermal performance and reduced power dissipation. Note that the maximum operating temperature is -55°C to 150°C (versus -55°C to 175°C on the original), which may be a limiting factor in high-temperature applications. Gate charge is elevated at 110nC (versus 61nC), resulting in slower switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can IRF9540SPBF be used as a direct replacement for IRF9540S?

A: Yes. The IRF9540SPBF is a parametric equivalent with identical electrical specifications. Both devices are rated for 100V, 19A continuous drain current, 200mOhm on-resistance, and operate across -55°C to 175°C. The primary difference is that IRF9540SPBF is Active and ROHS3 Compliant, whereas IRF9540S is Obsolete and RoHS non-compliant. Footprint and pinout are identical in the TO-263 (D2PAK) package.

Q: What is the key difference between FQB22P10TM and IRF9540S?

A: The FQB22P10TM provides enhanced performance with 22A continuous drain current (versus 19A), lower on-resistance of 125mOhm (versus 200mOhm), and reduced gate charge of 50nC (versus 61nC). Both maintain 100V voltage rating and D2PAK package compatibility. The FQB22P10TM is suitable for applications requiring higher current capacity or improved efficiency. Maximum Vgs is ±30V on FQB22P10TM versus ±20V on IRF9540S.

Q: When should IRF9530NSTRLPBF be selected over other substitutes?

A: The IRF9530NSTRLPBF should be selected when the application requires lower continuous drain current (14A is sufficient) and benefits from reduced input capacitance (760pF versus 1400pF). The lower capacitance enables faster switching transitions. This substitute is appropriate for designs where the 19A rating of the original device exceeds requirements.

Q: Is IRF9540NSTRLPBF suitable for high-temperature applications?

A: The IRF9540NSTRLPBF operates across -55°C to 150°C, which is 25°C lower than the original IRF9540S (-55°C to 175°C). Applications requiring operation above 150°C should use IRF9540SPBF or FQB22P10TM, both of which support -55°C to 175°C operation.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts are available in TO-263 (D2PAK) or equivalent D2PAK package format, ensuring mechanical and electrical compatibility with the original IRF9540S footprint. Packaging formats vary (Tube, Cut Tape, Digi-Reel®) but do not affect PCB mounting compatibility.

Q: What is the significance of RoHS compliance for substitute selection?

A: The original IRF9540S is RoHS non-compliant. All substitute parts (IRF9540SPBF, FQB22P10TM, IRF9530NSTRLPBF, IRF9540NSTRLPBF) are ROHS3 Compliant. For new designs or applications subject to RoHS regulations, any of the substitute parts satisfy compliance requirements. For legacy systems using non-compliant components, substitutes provide a path to regulatory compliance.

Q: How does gate charge affect switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge enables faster switching transitions and reduced switching losses. The FQB22P10TM (50nC) and IRF9530NSTRLPBF (58nC) offer faster switching than IRF9540S (61nC). The IRF9540NSTRLPBF (110nC) results in slower switching. Selection depends on the application's switching frequency and thermal requirements.

Q: Can on-resistance variation affect circuit performance?

A: Yes. On-resistance (Rds On) directly impacts power dissipation and thermal performance. Lower on-resistance reduces I²R losses. The FQB22P10TM (125mOhm) and IRF9540NSTRLPBF (117mOhm) provide significantly lower on-resistance than IRF9540S (200mOhm), resulting in reduced power dissipation and improved efficiency. Applications with high current or thermal constraints benefit from these lower on-resistance alternatives.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message