IRF9540PBF Equivalent & Substitute Parts

Part Overview

The IRF9540PBF is a P-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 19A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220AB configuration and is designed for applications requiring high-current P-channel switching and linear regulation. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set, enabling direct replacement in circuit designs without functional degradation.

Substiute Parts

IRF9540PBF
Vishay SiliconixIn Stock: 55447IRF9540PBF Datasheet
IRF9540PBF
Current Part
IRF9540PBF-BE3
Vishay SiliconixIn Stock: 4633IRF9540PBF-BE3 Datasheet
IRF9540PBF-BE3
Direct
IRF9530NPBF
Infineon TechnologiesIn Stock: 125489IRF9530NPBF Datasheet
IRF9530NPBF
MFR Recommended
IRF9540NPBF
Infineon TechnologiesIn Stock: 65274IRF9540NPBF Datasheet
IRF9540NPBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 19 A (Tc)
Rds On (Max) @ Id, Vgs 200 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25V
Power Dissipation (Max) 150 W (Tc)
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for P-Channel MOSFETs is determined by equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss) must equal or exceed the main part specification
  • Gate-Source Threshold Voltage (Vgs(th)) must be compatible within the specified range
  • Gate-Source Maximum Voltage (Vgs Max) must support the same drive voltage range
  • Operating Temperature range must encompass the main part's range

Mechanical Compatibility Criteria:

  • Mounting Type must be Through Hole
  • Package / Case must be TO-220-3
  • Supplier Device Package must be TO-220AB

Compliance Criteria:

  • RoHS3 Compliance required
  • Moisture Sensitivity Level must be 1 (Unlimited)

Substitute parts are grouped into two categories: Direct Manufacturer Equivalents (identical electrical specifications and manufacturer) and Manufacturer-Recommended Alternatives (equivalent or superior electrical performance from alternative manufacturers).

Parameter Comparison

Parameter IRF9540PBF (Main) IRF9540PBF-BE3 IRF9530NPBF IRF9540NPBF
Manufacturer Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
FET Type P-Channel P-Channel P-Channel P-Channel
Vdss 100 V 100 V 100 V 100 V
Id @ 25°C 19 A (Tc) 19 A (Tc) 14 A (Tc) 23 A (Tc)
Rds On (Max) @ Id, Vgs 200 mOhm @ 11A, 10V 200 mOhm @ 11A, 10V 200 mOhm @ 8.4A, 10V 117 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA 4 V @ 250µA 4 V @ 250µA 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10V 61 nC @ 10V 58 nC @ 10V 97 nC @ 10V
Vgs (Max) ±20 V ±20 V ±20 V ±20 V
Ciss (Max) @ Vds 1400 pF @ 25V 1400 pF @ 25V 760 pF @ 25V 1300 pF @ 25V
Power Dissipation (Max) 150 W (Tc) 150 W (Tc) 79 W (Tc) 140 W (Tc)
Operating Temperature -55 to 175 °C (TJ) -55 to 175 °C (TJ) -55 to 175 °C (TJ) -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Active

Engineering Selection Recommendations

IRF9540PBF-BE3 (Vishay Siliconix)

This part is a direct manufacturer equivalent with identical electrical specifications and mechanical packaging. The IRF9540PBF-BE3 maintains the same Vdss (100V), Id (19A), Rds On (200mOhm @ 11A, 10V), and power dissipation rating (150W). Both parts share the same operating temperature range (-55 to 175°C) and are RoHS3 compliant with MSL 1 rating. This substitute is suitable for direct replacement in existing designs without circuit modification.

IRF9530NPBF (Infineon Technologies)

The IRF9530NPBF is a manufacturer-recommended alternative from Infineon Technologies with equivalent Vdss (100V) and compatible gate threshold voltage (4V @ 250µA). This part operates within the same temperature range (-55 to 175°C) and maintains RoHS3 compliance with MSL 1 rating. The IRF9530NPBF is rated for 14A continuous drain current, which is lower than the main part's 19A specification. Power dissipation is rated at 79W compared to the main part's 150W. This substitute is suitable for applications where the 14A current rating and 79W power dissipation are sufficient for the intended circuit function.

IRF9540NPBF (Infineon Technologies)

The IRF9540NPBF is a manufacturer-recommended alternative from Infineon Technologies with superior electrical performance. This part maintains the same Vdss (100V) and gate threshold voltage (4V @ 250µA) as the main part. The IRF9540NPBF is rated for 23A continuous drain current, exceeding the main part's 19A specification, and features a lower Rds On (117mOhm @ 11A, 10V) compared to the main part's 200mOhm. Power dissipation is rated at 140W. The operating temperature range is -55 to 150°C, which is 25°C lower than the main part's maximum junction temperature. This substitute is suitable for applications requiring higher current capacity and lower on-resistance, provided the maximum junction temperature of 150°C is compatible with the thermal design.

All substitute parts maintain Active product status, RoHS3 compliance, and MSL 1 rating, ensuring compatibility with current manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can IRF9540PBF-BE3 be used as a direct replacement for IRF9540PBF?

A: Yes. The IRF9540PBF-BE3 is a direct manufacturer equivalent with identical electrical specifications, including Vdss (100V), Id (19A), Rds On (200mOhm @ 11A, 10V), and power dissipation (150W). Both parts share the same TO-220-3 package, operating temperature range (-55 to 175°C), and compliance certifications. No circuit modification is required.

Q: What is the key difference between IRF9530NPBF and the main IRF9540PBF?

A: The IRF9530NPBF has a lower continuous drain current rating (14A versus 19A) and reduced power dissipation (79W versus 150W). Both parts maintain the same Vdss (100V), gate threshold voltage (4V @ 250µA), and operating temperature range (-55 to 175°C). The IRF9530NPBF is suitable for applications where the lower current and power ratings are sufficient.

Q: Can IRF9540NPBF replace IRF9540PBF in all applications?

A: The IRF9540NPBF offers superior electrical performance with higher current capacity (23A versus 19A) and lower on-resistance (117mOhm versus 200mOhm). However, the maximum operating temperature is 150°C compared to the main part's 175°C. Substitution is valid for applications where the thermal design does not require operation above 150°C junction temperature.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IRF9540PBF-BE3, IRF9530NPBF, and IRF9540NPBF) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the main part's compliance status.

Q: What is the significance of the TO-220-3 package for substitution?

A: The TO-220-3 package is a standardized Through Hole configuration with three leads (Gate, Drain, Source). All substitute parts use this identical package, ensuring mechanical and electrical compatibility with existing PCB layouts and thermal management solutions without modification.

Q: How does gate charge (Qg) affect substitution suitability?

A: Gate charge determines the switching speed and driver circuit requirements. The main part has 61 nC @ 10V. The IRF9540PBF-BE3 matches this specification exactly. The IRF9530NPBF has slightly lower gate charge (58 nC), while the IRF9540NPBF has higher gate charge (97 nC). Higher gate charge may require increased driver current capability but does not prevent substitution if the driver circuit is designed accordingly.

Q: What does Rds On (Max) @ Id, Vgs represent?

A: Rds On is the on-state drain-source resistance measured at specified gate-source voltage (10V) and drain current. The main part specifies 200mOhm @ 11A, 10V. Lower Rds On values reduce conduction losses and heat generation. The IRF9540NPBF offers superior performance with 117mOhm @ 11A, 10V, while the IRF9530NPBF maintains the same 200mOhm specification.

Q: Is input capacitance (Ciss) a critical parameter for substitution?

A: Input capacitance affects switching speed and driver circuit design. The main part has 1400 pF @ 25V. The IRF9540PBF-BE3 matches this specification. The IRF9530NPBF has lower capacitance (760 pF), enabling faster switching, while the IRF9540NPBF has comparable capacitance (1300 pF). Differences in Ciss do not prevent substitution but may affect circuit performance characteristics.

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