IRF9540NSTRR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9540NSTRR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 23A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design support and procurement.

The IRF9540NSTRR belongs to the HEXFET® series and is designed for applications requiring P-channel switching and amplification in power management circuits. Due to its obsolete status, equivalent parts from active product lines must be evaluated for direct substitution or design adaptation.

Substiute Parts

IRF9540NSTRR
Infineon TechnologiesIn Stock: 1436IRF9540NSTRR Datasheet
IRF9540NSTRR
Current Part
FQB22P10TM
onsemiIn Stock: 15277FQB22P10TM Datasheet
FQB22P10TM
MFR Recommended
IRF9540SPBF
Vishay SiliconixIn Stock: 1411IRF9540SPBF Datasheet
IRF9540SPBF
MFR Recommended
IRF9540STRLPBF
Vishay SiliconixIn Stock: 70487IRF9540STRLPBF Datasheet
IRF9540STRLPBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 23 A
On-State Resistance (Rds On) @ 11A, 10V 117 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 97 nC
Input Capacitance (Ciss) @ 25V 1300 pF
Power Dissipation (Ta) 3.8 W
Power Dissipation (Tc) 140 W
Operating Temperature Range -55 to 150 °C
Package Type TO-263-3 (D2PAK) -
Mounting Type Surface Mount -

Substitute Part Grouping Explanation

Substitution of the IRF9540NSTRR is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
  • Continuous Drain Current (Id): Must meet or exceed 23A at 25°C
  • On-State Resistance (Rds On): Lower values indicate improved performance; values within 117mOhm to 200mOhm are acceptable for most applications
  • Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V nominal
  • Gate Charge (Qg): Lower values reduce switching losses; range 50nC to 97nC acceptable
  • Input Capacitance (Ciss): Range 1300pF to 1500pF acceptable
  • Operating Temperature: Must support -55°C to 150°C minimum

Mechanical Compatibility Criteria:

  • Package Type: TO-263-3 (D2PAK) with 2 leads plus tab
  • Mounting Type: Surface Mount
  • Pin Configuration: Identical to original

Identified Substitute Parts:

  1. FQB22P10TM (onsemi) – Primary substitute with active product status
  2. IRF9540SPBF (Vishay Siliconix) – Direct equivalent with active status
  3. IRF9540STRLPBF (Vishay Siliconix) – Direct equivalent with active status

Parameter Comparison

Parameter IRF9540NSTRR (Infineon) FQB22P10TM (onsemi) IRF9540SPBF (Vishay) IRF9540STRLPBF (Vishay)
Vdss (V) 100 100 100 100
Id @ 25°C (A) 23 22 19 19
Rds On @ 11A, 10V (mOhm) 117 125 200 200
Vgs(th) @ 250µA (V) 4 4 4 4
Qg @ 10V (nC) 97 50 61 61
Ciss @ 25V (pF) 1300 1500 1400 1400
Power Dissipation Ta (W) 3.8 3.75 3.7 3.7
Power Dissipation Tc (W) 140 125 150 150
Operating Temperature (°C) -55 to 150 -55 to 175 -55 to 175 -55 to 175
Package TO-263-3 (D2PAK) TO-263 (D2PAK) TO-263-3 (D2PAK) TO-263-3 (D2PAK)
Product Status Obsolete Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQB22P10TM (onsemi QFET® Series)

This part is recommended as the primary substitute. It maintains 100V Vdss rating with 22A continuous drain current, meeting the original specification within 4.3% current margin. The Rds On of 125mOhm is 6.8% higher than the original, resulting in marginally increased conduction losses. Gate charge is significantly reduced to 50nC, providing improved switching efficiency. The device is ROHS3 compliant and carries active product status with 15,226 units in stock. Extended operating temperature range to 175°C provides additional thermal margin.

IRF9540SPBF and IRF9540STRLPBF (Vishay Siliconix)

Both parts are direct electrical equivalents sharing the IRF9540 base product number. They maintain 100V Vdss with 19A continuous drain current, representing a 17.4% reduction from the original 23A specification. On-state resistance increases to 200mOhm, a 70.9% increase from the original. These devices are suitable for applications where the 19A rating is sufficient. Both carry ROHS3 compliance and active product status. IRF9540STRLPBF offers significantly higher inventory (70,400 units) compared to IRF9540SPBF (1,316 units). Extended operating temperature to 175°C is supported by both variants.

Compliance Considerations

The original IRF9540NSTRR is RoHS non-compliant. All three substitute parts are ROHS3 compliant, meeting current environmental regulations. REACH status is unaffected for all parts. All devices carry EAR99 export classification and identical HTSUS code 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can FQB22P10TM directly replace IRF9540NSTRR without circuit modification?

A: FQB22P10TM is electrically compatible within acceptable tolerances. The 22A rating versus 23A original represents a 4.3% margin reduction. The 125mOhm Rds On versus 117mOhm original increases conduction losses by approximately 6.8%. For applications operating below 22A continuous current, direct substitution is valid. Thermal analysis should confirm adequate heat dissipation with the slightly higher Rds On value.

Q: What is the difference between IRF9540SPBF and IRF9540STRLPBF?

A: Both parts are electrically identical with the same electrical specifications. The primary differences are packaging format and inventory availability. IRF9540SPBF is supplied in Tube packaging with 1,316 units in stock. IRF9540STRLPBF is supplied in Cut Tape (CT) & Digi-Reel® format with 70,400 units in stock. IRF9540STRLPBF carries REACH Affected status while IRF9540SPBF is REACH Unaffected. Selection depends on procurement volume requirements and packaging compatibility with assembly processes.

Q: Why does FQB22P10TM have lower gate charge than the original?

A: Gate charge (Qg) of 50nC versus 97nC reflects different semiconductor design and process technology between onsemi QFET® and Infineon HEXFET® series. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications. This is a performance advantage, not a limitation.

Q: Are all substitute parts in the same D2PAK package?

A: All substitute parts use TO-263-3 (D2PAK) surface mount package with identical pin configuration and lead spacing. Physical board layout compatibility is maintained. Thermal pad dimensions and solder attachment procedures remain consistent across all parts.

Q: What is the current rating difference between FQB22P10TM and IRF9540 variants?

A: FQB22P10TM is rated for 22A continuous drain current. IRF9540SPBF and IRF9540STRLPBF are rated for 19A continuous drain current. For applications requiring the full 23A of the original IRF9540NSTRR, FQB22P10TM is the appropriate selection. The IRF9540 variants are suitable for applications with maximum current requirements of 19A or less.

Q: How does operating temperature range affect part selection?

A: The original IRF9540NSTRR operates from -55°C to 150°C. All three substitute parts extend the upper limit to 175°C. This provides additional thermal margin and is beneficial for high-temperature environments. No design changes are required; the extended range is a performance enhancement.

Q: Is RoHS compliance mandatory for this substitution?

A: The original IRF9540NSTRR is RoHS non-compliant. All substitute parts are ROHS3 compliant. If the application or end-market requires RoHS compliance, substitution is necessary. If legacy RoHS non-compliant designs are acceptable, the original part may still be used if available from inventory.

Request Quote (Ships tomorrow)