IRF9540NL P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9540NL is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 23A continuous drain current in the TO-262 through-hole package. This device is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing production support and design continuity. The IRF9540NL belongs to the HEXFET® series and is designed for applications requiring P-channel switching and amplification in power electronics circuits.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	117	mOhm
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	97	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1300	pF @ 25V
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-262-3	Through Hole
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRF9540NL is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 100V
Continuous Drain Current (Id): 23A at Tc
Gate-Source Voltage (Vgs): ±20V maximum
On-State Resistance (Rds On): 117 mOhm maximum at specified conditions
Threshold Voltage (Vgs(th)): 4V maximum at 250µA
Operating Temperature Range: -55°C to 150°C

Mechanical Equivalence Criteria:

Package Type: TO-262-3 Long Leads (I2PAK, TO-262AA)
Mounting: Through Hole
Pin Configuration: P-Channel MOSFET pinout

The IRF9540NLPBF is identified as a direct substitute based on matching electrical ratings and identical package specifications. Both devices share the same base product number (IRF9540) and are manufactured by Infineon Technologies within the HEXFET® series.

Parameter Comparison

Parameter	IRF9540NL	IRF9540NLPBF	Unit
Manufacturer	Infineon Technologies	Infineon Technologies
FET Type	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	23	23	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	117 @ 11A, 10V	117 @ 14A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	97 @ 10V	110 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1300 @ 25V	1450 @ 25V	pF
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-262-3	TO-262-3
Mounting Type	Through Hole	Through Hole
Product Status	Obsolete	Not For New Designs
RoHS Status	RoHS non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF9540NLPBF as Primary Substitute:

The IRF9540NLPBF is the direct equivalent for IRF9540NL applications. Both devices share identical electrical specifications for voltage, current, and on-state resistance ratings. The IRF9540NLPBF maintains the same TO-262 through-hole package configuration, ensuring mechanical compatibility in existing PCB layouts without redesign.

Compliance Considerations:

The IRF9540NL is classified as Obsolete and RoHS non-compliant. The IRF9540NLPBF carries a product status of "Not For New Designs" but achieves ROHS3 compliance, making it suitable for applications requiring regulatory adherence. Both devices are REACH Unaffected and classified under ECCN EAR99.

Parameter Variance:

Minor differences exist in gate charge (97 nC vs. 110 nC) and input capacitance (1300 pF vs. 1450 pF). These variations remain within acceptable tolerances for P-channel MOSFET applications and do not affect functional substitution in standard switching and amplification circuits.

Inventory and Packaging:

The IRF9540NLPBF is available in Tube packaging with higher inventory levels (1520 Pcs) compared to the IRF9540NL (1059 Pcs). Both are classified as Moisture Sensitivity Level 1 (Unlimited).

Frequently Asked Questions (FAQ)

Q: Can IRF9540NLPBF directly replace IRF9540NL in existing designs?

A: Yes. The IRF9540NLPBF is electrically and mechanically equivalent to the IRF9540NL. Both devices share identical Vdss (100V), Id (23A), Rds On (117 mOhm), and TO-262 package specifications. No circuit modifications are required.

Q: What is the difference between IRF9540NL and IRF9540NLPBF?

A: The primary differences are product status and compliance. IRF9540NL is Obsolete and RoHS non-compliant, while IRF9540NLPBF is Not For New Designs but ROHS3 compliant. Gate charge and input capacitance show minor variations (97 nC vs. 110 nC, and 1300 pF vs. 1450 pF respectively) that do not affect substitution suitability.

Q: Are there packaging differences between these parts?

A: Both devices use the TO-262-3 Long Leads package (I2PAK, TO-262AA) with through-hole mounting. The IRF9540NL is supplied in standard packaging, while IRF9540NLPBF is supplied in Tube packaging. Pin configuration and footprint are identical.

Q: What applications are these P-channel MOSFETs suitable for?

A: The IRF9540NL and IRF9540NLPBF are designed for power switching and amplification applications requiring 100V blocking voltage and 23A continuous current capacity. Typical applications include DC-DC converters, motor control, and power supply circuits.

Q: Is the IRF9540NLPBF suitable for new product designs?

A: The IRF9540NLPBF carries a "Not For New Designs" status. For new designs, consult Infineon Technologies for current-generation P-channel MOSFET alternatives with equivalent or superior specifications.

Q: What is the operating temperature range for these devices?

A: Both IRF9540NL and IRF9540NLPBF operate across -55°C to 150°C junction temperature range, suitable for industrial and automotive applications.

Q: How do gate charge specifications affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IRF9540NL specifies 97 nC while IRF9540NLPBF specifies 110 nC at 10V. This 13 nC difference has minimal impact on switching speed and driver requirements in standard applications.

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