IRF9530STRRPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9530STRRPBF is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 12A continuous drain current. The device is packaged in TO-263 (D2PAK) surface mount configuration and is classified as Active product status. This component is used in switching applications requiring P-channel gate drive functionality in power management circuits. Substitute parts are identified based on electrical parameter compatibility and mechanical packaging equivalence to support design flexibility and supply chain continuity.

Substiute Parts

IRF9530STRRPBF
Vishay SiliconixIn Stock: 1993IRF9530STRRPBF Datasheet
IRF9530STRRPBF
Current Part
IRF9530STRLPBF
Vishay SiliconixIn Stock: 1220IRF9530STRLPBF Datasheet
IRF9530STRLPBF
Parametric Equivalent
IRF9530NSTRLPBF
Infineon TechnologiesIn Stock: 21246IRF9530NSTRLPBF Datasheet
IRF9530NSTRLPBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 12 A
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 300 mOhm @ 7.2A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 38 nC @ 10V
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-263 (D2PAK)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IRF9530STRRPBF are identified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Electrical Compatibility Parameters:

  • Drain-to-Source Voltage (Vdss): 100V minimum
  • FET Type: P-Channel configuration
  • Technology: MOSFET (Metal Oxide)
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Gate Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)

Mechanical Compatibility Parameters:

  • Package Type: TO-263 (D2PAK) surface mount
  • Mounting Type: Surface mount
  • Lead Configuration: 2 Leads + Tab

Compliance Parameters:

  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must maintain electrical performance within the specified voltage and current ratings while preserving identical mechanical packaging and compliance certifications. Variations in continuous drain current (Id), on-resistance (Rds On), and gate charge (Qg) are permitted provided the substitute part meets or exceeds the performance envelope of the primary device.

Parameter Comparison

Parameter IRF9530STRRPBF (Main) IRF9530STRLPBF (Substitute) IRF9530NSTRLPBF (Substitute)
Manufacturer Vishay Siliconix Vishay Siliconix Infineon Technologies
Drain-to-Source Voltage (Vdss) 100 V 100 V 100 V
Continuous Drain Current (Id) @ 25°C 12 A (Tc) 12 A (Tc) 14 A (Tc)
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 300 mOhm @ 7.2A, 10V 300 mOhm @ 7.2A, 10V 200 mOhm @ 8.4A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA 4 V @ 250µA 4 V @ 250µA
Gate Charge (Qg) @ Vgs 38 nC @ 10V 38 nC @ 10V 58 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V ±20 V ±20 V
Input Capacitance (Ciss) @ Vds 860 pF @ 25V 860 pF @ 25V 760 pF @ 25V
Operating Temperature Range -55 to 175 °C (TJ) -55 to 175 °C (TJ) -55 to 175 °C (TJ)
Package Type TO-263 (D2PAK) TO-263 (D2PAK) D2PAK
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active

Engineering Selection Recommendations

IRF9530STRLPBF (Vishay Siliconix, Cut Tape & Digi-Reel® Packaging)

The IRF9530STRLPBF is a parametric equivalent to the IRF9530STRRPBF with identical electrical specifications. The primary distinction is packaging format: this substitute is supplied in Cut Tape (CT) and Digi-Reel® configuration rather than Tape & Reel (TR). Both devices are manufactured by Vishay Siliconix, maintain ROHS3 compliance, and are classified as Active product status. This substitute is suitable for applications where packaging format flexibility is acceptable and continuous drain current of 12A meets design requirements.

IRF9530NSTRLPBF (Infineon Technologies, Cut Tape & Digi-Reel® Packaging)

The IRF9530NSTRLPBF is manufactured by Infineon Technologies and represents a performance-enhanced substitute. This device maintains the 100V drain-to-source voltage rating and identical gate threshold voltage (4V @ 250µA) and maximum gate voltage (±20V) specifications. The IRF9530NSTRLPBF provides increased continuous drain current (14A versus 12A) and reduced on-resistance (200 mOhm @ 8.4A, 10V versus 300 mOhm @ 7.2A, 10V), resulting in lower power dissipation and improved thermal performance. Gate charge is increased (58 nC @ 10V versus 38 nC @ 10V), and input capacitance is reduced (760 pF @ 25V versus 860 pF @ 25V). The device is ROHS3 compliant, classified as Active product status, and packaged in D2PAK surface mount configuration. This substitute is suitable for applications requiring enhanced current handling capability and reduced conduction losses.

Frequently Asked Questions (FAQ)

Q: Can the IRF9530STRLPBF be used as a direct replacement for the IRF9530STRRPBF?

A: Yes. The IRF9530STRLPBF is a parametric equivalent with identical electrical specifications. The difference is packaging format: Tape & Reel (TR) versus Cut Tape (CT) and Digi-Reel®. Both devices are manufactured by Vishay Siliconix and are electrically interchangeable.

Q: What are the key differences between the IRF9530NSTRLPBF and the IRF9530STRRPBF?

A: The IRF9530NSTRLPBF is manufactured by Infineon Technologies and provides enhanced performance: continuous drain current of 14A (versus 12A), reduced on-resistance of 200 mOhm (versus 300 mOhm), and lower power dissipation. Gate charge is higher at 58 nC (versus 38 nC), and input capacitance is lower at 760 pF (versus 860 pF). All three devices share identical drain-to-source voltage (100V), gate threshold voltage (4V @ 250µA), and operating temperature range (-55°C to 175°C).

Q: Are all substitute parts compatible with the same PCB layout?

A: Yes. All listed substitute parts use the TO-263 (D2PAK) surface mount package with identical mechanical dimensions and lead configuration (2 Leads + Tab). PCB footprints are compatible across all three devices.

Q: Do the substitute parts maintain RoHS3 compliance?

A: Yes. Both IRF9530STRLPBF and IRF9530NSTRLPBF are ROHS3 compliant with Moisture Sensitivity Level (MSL) of 1 (Unlimited), matching the compliance profile of the IRF9530STRRPBF.

Q: Which substitute part should be selected for applications requiring maximum current handling?

A: The IRF9530NSTRLPBF (Infineon Technologies) provides the highest continuous drain current rating at 14A and the lowest on-resistance at 200 mOhm, making it suitable for applications requiring enhanced current capacity and reduced conduction losses.

Q: Are there any gate drive considerations when substituting the IRF9530NSTRLPBF?

A: The IRF9530NSTRLPBF has increased gate charge (58 nC @ 10V versus 38 nC @ 10V) compared to the IRF9530STRRPBF. Gate drive circuits must supply sufficient charge to meet switching speed requirements. The maximum gate voltage specification (±20V) remains identical across all devices.

Q: What is the operating temperature range for all substitute parts?

A: All three devices operate across the identical temperature range of -55°C to 175°C (TJ), supporting applications across industrial and automotive temperature specifications.

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