IRF9530S Equivalent & Substitute Parts Reference

Part Overview

The IRF9530S, manufactured by Vishay Siliconix, is a P-Channel MOSFET in the Transistors, FETs, MOSFETs category, featuring a drain-to-source voltage (Vdss) of 100V, a continuous drain current (Id) of 12A (Tc), and surface mount TO-263(D2PAK) packaging. This device is obsolete, necessitating the identification and selection of substitute or cross-reference models to maintain compatibility and ensure continued supply. Suitable alternatives must match critical electrical and mechanical parameters to guarantee functional and drop-in replacement.

Key Parameters

Parameter	Value (IRF9530S)
Manufacturer Part Number	IRF9530S
Manufacturer	Vishay Siliconix
Category	Transistors, FETs, MOSFETs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25V
Power Dissipation (Max)	3.7W (Ta), 88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status	RoHS non-compliant
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute and equivalent MOSFETs for IRF9530S are identified strictly based on the following key parameters:

FET Type: P-Channel MOSFET
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: minimum 12A (Tc)
Drive Voltage: 10V (for Rds On specification)
Maximum Rds On: 300mOhm (reference current and gate voltage)
Vgs(th): 4V @ 250µA
Gate Charge: within provided values
Package Type: Surface Mount, TO-263 (D2PAK), TO-263AB
Power Dissipation: values at or exceeding original
Operating Temperature: -55°C ~ 175°C (TJ)
RoHS/REACH Compliance, Product Status, and Inventory

Only parts matching these parameters are listed as direct, parametric, or manufacturer-recommended substitutes.

Parameter Comparison

Parameter	IRF9530S	IRF9530STRLPBF	IRF9530SPBF	IRF9530NSTRLPBF
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Infineon Technologies
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	100 V	100 V	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)	12A (Tc)	12A (Tc)	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 7.2A, 10V	300mOhm @ 7.2A, 10V	300mOhm @ 7.2A, 10V	200mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10V	38 nC @ 10V	38 nC @ 10V	58 nC @ 10V
Vgs (Max)	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25V	860 pF @ 25V	860 pF @ 25V	760 pF @ 25V
Power Dissipation (Max)	3.7W (Ta), 88W (Tc)	3.7W (Ta), 88W (Tc)	3.7W (Ta), 88W (Tc)	3.8W (Ta), 79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

Selection of substitute parts for IRF9530S should be based on matching electrical parameters, mechanical compatibility, and compliance requirements. All listed alternatives maintain surface mount TO-263(D2PAK) package compatibility and meet or exceed original electrical specifications, including voltage, current, Rds On, and operating temperature. For applications requiring RoHS compliance, IRF9530STRLPBF, IRF9530SPBF, and IRF9530NSTRLPBF are suitable. Only active and compliant parts should be used in new designs or replacements where regulatory conformity is required.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting IRF9530S?
A1: Key parameters are FET type (P-Channel), drain-to-source voltage (100V), continuous drain current (≥12A Tc), Rds On at specified conditions, package (TO-263/D2PAK), and operating temperature.

Q2: Are the substitute models drop-in compatible?
A2: Substitute parts maintain the same package, pinout, and key electrical characteristics as IRF9530S. This ensures mechanical and functional compatibility for replacement purposes.

Q3: Does RoHS compliance differ among listed alternatives?
A3: IRF9530S is RoHS non-compliant, while IRF9530STRLPBF, IRF9530SPBF, and IRF9530NSTRLPBF are ROHS3 compliant. Compliance should be validated based on application requirements.

Q4: Can Infineon IRF9530NSTRLPBF be used as a substitute?
A4: IRF9530NSTRLPBF matches the required parameters and provides higher continuous drain current and lower Rds On, while maintaining package and voltage compatibility.

Q5: Are the physical packages equivalent for all substitutes?
A5: All substitutes utilize TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, ensuring mounting and board design consistency.

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