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IRF9530NSTRR Equivalent & Substitute Parts Reference
Part Overview
IRF9530NSTRR is a P-Channel power MOSFET from Infineon Technologies, designed for switching applications requiring up to 100V drain-to-source voltage and 14A continuous drain current. It features a D2PAK surface mount package and belongs to the HEXFET® series. This model is classified as obsolete. Selection of alternative or equivalent models is required to maintain form, fit, and function in new designs or for replacement purposes.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Category | Transistors, FETs, MOSFETs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Substitute Part Grouping Explanation
Substitute selection for IRF9530NSTRR is determined exclusively by equivalence in core electrical and mechanical parameters. Grouped under parametric equivalence and manufacturer-recommended categories, substitutes match in the following allowed criteria:
- P-Channel MOSFET configuration
- Drain to Source Voltage (Vdss)
- Continuous Drain Current (Id)
- Maximum Gate-Source Voltage (Vgs)
- Rds On under specified conditions
- Threshold Voltage (Vgs(th))
- Surface mount D2PAK / TO-263 package compatibility
- Operating temperature range
- Product compliance status (RoHS/REACH) No substitutions are made based on parameters not present in the provided input.
Parameter Comparison
| Part Number | Manufacturer | Vdss (Drain-Source Voltage) | Id (Cont Drain Current, Tc) | Rds On (Max) | Vgs(th) (Max) | Gate Charge (Max) | Vgs (Max) | Ciss (Max) | Power Dissipation (Max) | Operating Temp Range | Mounting Type | Supplier Device Package | Package / Case | RoHS Status | MSL | REACH Status | ECCN | HTSUS |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF9530NSTRR (Main) |
Infineon Technologies | 100 V | 14A (Tc) | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK, TO-263AB | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 |
| IRF9530NSTRLPBF | Infineon Technologies | 100 V | 14A (Tc) | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK, TO-263AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 |
| IRF9530SPBF | Vishay Siliconix | 100 V | 12A (Tc) | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK, TO-263AB | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 |
| IRF9530STRLPBF | Vishay Siliconix | 100 V | 12A (Tc) | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK, TO-263AB | ROHS3 Compliant | 1 (Unlimited) | - | EAR99 | 8541.29.0095 |
| IRF9530STRRPBF | Vishay Siliconix | 100 V | 12A (Tc) | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK, TO-263AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 |
| IRF9540SPBF | Vishay Siliconix | 100 V | 19A (Tc) | 200mOhm @ 11A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1400 pF @ 25 V | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK, TO-263AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 |
Engineering Selection Recommendations
Selection of alternative models for IRF9530NSTRR should be guided strictly by product status and compliance certifications. IRF9530NSTRR is obsolete and RoHS non-compliant. Substitutes IRF9530NSTRLPBF, IRF9530SPBF, IRF9530STRLPBF, IRF9530STRRPBF, and IRF9540SPBF are listed as active and are ROHS3 compliant. All substitutes meet the specified moisture sensitivity and environmental certification parameters. The package, voltage, current, and other electrical parameters are included for compatibility.
Frequently Asked Questions (FAQ)
Which parameters must match to substitute IRF9530NSTRR?
The substitute must match the P-Channel MOSFET type, drain-source voltage, current rating, operating temperature range, package type, and mounting method. RoHS, REACH, and moisture sensitivity requirements are also part of the criteria.
Are all substitutes provided surface mount D2PAK compatible?
All listed substitute parts specify D2PAK or TO-263 packages, suitable for the same surface mount footprints as IRF9530NSTRR.
Do any substitutes offer different compliance statuses?
IRF9530NSTRR is RoHS non-compliant and obsolete. All provided substitutes are ROHS3 compliant and have MSL 1 (Unlimited) ratings.
Is the drain current rating identical across all substitutes?
IRF9530NSTRLPBF matches the 14A rating. IRF9530SPBF, IRF9530STRLPBF, and IRF9530STRRPBF are rated at 12A. IRF9540SPBF supplies up to 19A.
What considerations apply for switching to a substitute?
When selecting a substitute, verify electrical performance parameters as listed and ensure package compatibility for direct board replacement. Compliance certifications and active status are provided for regulatory and sourcing requirements.
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