IRF9530 MOSFET P-Channel 100V 12A Equivalent & Substitute Parts

Part Overview

The IRF9530 is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 12A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220AB configuration and dissipates a maximum of 88W at the case temperature. The IRF9530 is classified as an obsolete product, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements. Substitute parts maintain electrical and mechanical compatibility while offering improved availability and compliance status.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	12	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	300	mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	860	pF @ 25V
Power Dissipation (Max)	88	W (Tc)
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF9530 are identified based on strict electrical and mechanical parameter compatibility. The substitution logic is based on the following criteria:

Primary Compatibility Parameters:

FET Type: P-Channel configuration
Drain to Source Voltage (Vdss): 100V minimum rating
Package / Case: TO-220-3 (Through Hole TO-220AB)
Operating Temperature Range: -55°C to 175°C (TJ)
Gate-Source Voltage (Vgs): ±20V maximum rating

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 12A @ 25°C
Threshold Voltage (Vgs(th)): 4V @ 250µA maximum
On-State Resistance (Rds On): Equal to or lower than 300mOhm @ specified conditions
Gate Charge (Qg): Electrical characteristic for switching performance
Input Capacitance (Ciss): Electrical characteristic for gate drive requirements

Substitute parts meeting all primary parameters and maintaining or improving secondary parameters are classified as direct electrical equivalents. Differences in power dissipation, gate charge, and input capacitance do not preclude substitution when primary electrical ratings are met or exceeded.

Parameter Comparison

Parameter	IRF9530 (Vishay Siliconix)	IRF9530PBF (Vishay Siliconix)	IRF9530NPBF (Infineon Technologies)
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	100 V	100 V	100 V
Current - Continuous Drain (Id) @ 25°C	12 A (Tc)	12 A (Tc)	14 A (Tc)
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	300 mOhm @ 7.2A, 10V	300 mOhm @ 7.2A, 10V	200 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10V	38 nC @ 10V	58 nC @ 10V
Vgs (Max)	±20 V	±20 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25V	860 pF @ 25V	760 pF @ 25V
Power Dissipation (Max)	88 W (Tc)	88 W (Tc)	79 W (Tc)
Operating Temperature	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IRF9530PBF (Vishay Siliconix) — Direct Equivalent

The IRF9530PBF is a direct electrical equivalent to the IRF9530, maintaining identical electrical specifications across all primary and secondary parameters. The IRF9530PBF is classified as an Active product with ROHS3 compliance and REACH Affected status. This part is recommended as the primary replacement for obsolete IRF9530 units, offering improved product status and regulatory compliance while preserving all electrical characteristics. Packaging is supplied in Tube format with 3961 units in current inventory.

IRF9530NPBF (Infineon Technologies HEXFET®) — Enhanced Substitute

The IRF9530NPBF is manufactured by Infineon Technologies under the HEXFET® series designation and provides enhanced electrical performance relative to the IRF9530. The IRF9530NPBF exceeds the minimum continuous drain current requirement with a 14A rating (versus 12A), delivers improved on-state resistance of 200mOhm (versus 300mOhm), and maintains full voltage and temperature compatibility. The IRF9530NPBF is classified as an Active product with ROHS3 compliance and REACH Unaffected status. This part is recommended for applications requiring improved thermal performance or higher current capacity within the same voltage and package envelope. Packaging is supplied in Tube format with 125400 units in current inventory.

Both substitute parts are qualified for selection based on product status (Active), regulatory compliance (ROHS3), and electrical parameter compatibility with the obsolete IRF9530.

Frequently Asked Questions (FAQ)

Q: Can the IRF9530PBF be used as a direct replacement for the IRF9530?

A: Yes. The IRF9530PBF maintains identical electrical specifications including Vdss (100V), continuous drain current (12A @ 25°C), on-state resistance (300mOhm @ 7.2A, 10V), threshold voltage (4V @ 250µA), and operating temperature range (-55°C to 175°C). Both devices are packaged in TO-220-3 (Through Hole TO-220AB) configuration. The IRF9530PBF is an Active product with improved compliance status.

Q: What are the advantages of the IRF9530NPBF over the IRF9530?

A: The IRF9530NPBF provides enhanced performance in three areas: (1) higher continuous drain current rating of 14A versus 12A, (2) lower on-state resistance of 200mOhm versus 300mOhm, and (3) lower input capacitance of 760pF versus 860pF. These improvements result in reduced power dissipation and improved switching characteristics. The IRF9530NPBF maintains full voltage compatibility (100V Vdss) and identical package configuration (TO-220-3).

Q: Are there any differences in gate charge between the substitute parts?

A: Yes. The IRF9530 and IRF9530PBF both specify 38nC gate charge @ 10V, while the IRF9530NPBF specifies 58nC @ 10V. The higher gate charge in the IRF9530NPBF reflects the enhanced current-carrying capability and does not preclude substitution. Gate drive circuits must be verified for compatibility with the specified gate charge value.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. All three parts share identical TO-220-3 package configuration and pin assignment, enabling direct mechanical and electrical substitution on existing printed circuit boards without layout modification.

Q: What is the compliance status of each substitute part?

A: The IRF9530PBF is ROHS3 Compliant and REACH Affected. The IRF9530NPBF is ROHS3 Compliant and REACH Unaffected. The original IRF9530 is RoHS non-compliant. Selection should be based on end-product regulatory requirements.

Q: Is the IRF9530NPBF recommended over the IRF9530PBF?

A: Selection between IRF9530PBF and IRF9530NPBF depends on application requirements. The IRF9530PBF is recommended for direct replacement with identical electrical specifications. The IRF9530NPBF is recommended for applications requiring improved thermal performance, higher current capacity, or lower on-state resistance. Both parts are Active products with ROHS3 compliance.

Q: What is the moisture sensitivity level for these parts?

A: All three parts are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

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