IRF9520 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9520 is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with a continuous drain current of 6.8A at 25°C. The device is housed in a Through Hole TO-220AB package and is designed for general-purpose switching and amplification applications requiring P-channel functionality.

The original IRF9520 manufactured by Vishay Siliconix is classified as Obsolete. Substitute parts are necessary to maintain design continuity and ensure component availability for new production builds and field replacements. The substitute parts listed maintain electrical and mechanical compatibility while offering improved availability and compliance status.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	6.8	A (Tc)
Drive Voltage (Max Rds On)	10	V
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Voltage (Vgs) Maximum	±20	V
Power Dissipation (Max)	60	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Supplier Device Package	TO-220AB	—

Substitute Part Grouping Explanation

Substitution of the IRF9520 is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

FET Type: P-Channel (required for circuit polarity compatibility)
Drain to Source Voltage (Vdss): 100V (minimum voltage rating requirement)
Continuous Drain Current (Id) @ 25°C: 6.8A (minimum current handling requirement)
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA (gate drive compatibility)
Gate Voltage (Vgs) Maximum: ±20V (gate signal tolerance)
Operating Temperature Range: -55°C to 175°C (thermal operating envelope)

Mechanical Equivalence Criteria:

Mounting Type: Through Hole (PCB assembly method)
Package / Case: TO-220-3 (physical form factor)
Supplier Device Package: TO-220AB (thermal and electrical interface)

Substitute parts must meet or exceed all electrical parameters and maintain identical mechanical packaging. Variations in secondary parameters such as on-resistance (Rds On), gate charge (Qg), and input capacitance (Ciss) are acceptable provided they do not degrade circuit performance.

Parameter Comparison

Parameter	IRF9520 (Vishay Siliconix)	IRF9520PBF (Vishay Siliconix)	IRF9520NPBF (Infineon Technologies)
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	100 V	100 V	100 V
Continuous Drain Current (Id) @ 25°C	6.8 A (Tc)	6.8 A (Tc)	6.8 A (Tc)
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.1A, 10V	600 mOhm @ 4.1A, 10V	480 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V	18 nC @ 10 V	27 nC @ 10 V
Vgs (Max)	±20 V	±20 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V	390 pF @ 25 V	350 pF @ 25 V
Power Dissipation (Max)	60 W (Tc)	60 W (Tc)	60 W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220AB	TO-220AB	TO-220AB
Product Status	Obsolete	Active	Obsolete
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF9520PBF (Vishay Siliconix) — Primary Substitute

The IRF9520PBF is the direct equivalent of the original IRF9520 with identical electrical specifications. This part maintains 100% parameter compatibility across all critical ratings including Vdss, Id, Rds On, Vgs(th), and operating temperature range. The IRF9520PBF carries Active product status and ROHS3 compliance, providing superior long-term availability and regulatory alignment compared to the Obsolete original part. Packaging is supplied in Tube format with 7857 units in current inventory stock.

IRF9520NPBF (Infineon Technologies) — Secondary Substitute

The IRF9520NPBF is manufactured by Infineon Technologies under the HEXFET® series designation. This part meets all critical electrical requirements for Vdss, Id, Vgs(th), and operating temperature. Secondary parameter variations include lower on-resistance (480 mOhm versus 600 mOhm), higher gate charge (27 nC versus 18 nC), and lower input capacitance (350 pF versus 390 pF). These variations result in improved switching efficiency but require gate drive circuit evaluation for compatibility. The IRF9520NPBF carries ROHS3 compliance but is classified as Obsolete. Packaging is supplied in Tube format with 6585 units in current inventory stock.

Selection between IRF9520PBF and IRF9520NPBF should be based on product status requirements and gate drive circuit design constraints. IRF9520PBF is recommended for new designs requiring Active component status. IRF9520NPBF is suitable for applications where improved on-resistance performance is beneficial and gate drive circuits accommodate the higher gate charge specification.

Frequently Asked Questions (FAQ)

Q: Can the IRF9520PBF be used as a direct replacement for the IRF9520?

A: Yes. The IRF9520PBF is electrically and mechanically identical to the IRF9520. Both parts share the same base product number, FET type (P-Channel), voltage rating (100V), current rating (6.8A), and TO-220AB package. The primary difference is product status: IRF9520PBF is Active while the original IRF9520 is Obsolete. IRF9520PBF is suitable for direct substitution in all applications.

Q: What are the differences between IRF9520PBF and IRF9520NPBF?

A: Both parts meet the core electrical requirements of 100V Vdss, 6.8A Id, and 4V Vgs(th). The IRF9520NPBF exhibits lower on-resistance (480 mOhm versus 600 mOhm), higher gate charge (27 nC versus 18 nC), and lower input capacitance (350 pF versus 390 pF). These differences affect switching speed and gate drive power requirements. IRF9520PBF maintains exact parameter matching with the original IRF9520, while IRF9520NPBF offers improved conduction efficiency at the cost of increased gate drive complexity.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts are supplied in the TO-220AB package with TO-220-3 case designation. All parts are Through Hole mounted devices suitable for identical PCB assembly processes.

Q: What is the significance of RoHS compliance status?

A: The original IRF9520 is RoHS non-compliant, while both IRF9520PBF and IRF9520NPBF are ROHS3 compliant. ROHS3 compliance indicates the parts meet Restriction of Hazardous Substances regulations and are suitable for applications subject to environmental and regulatory requirements. For new designs and regulated applications, ROHS3 compliant parts are required.

Q: Can the IRF9520NPBF be used in circuits designed for the IRF9520?

A: The IRF9520NPBF meets all critical electrical parameters and is mechanically compatible. However, the higher gate charge (27 nC versus 18 nC) and lower on-resistance require evaluation of gate drive circuit performance. Circuits with marginal gate drive capability may require adjustment. Thermal performance improves due to lower on-resistance, reducing power dissipation in conduction-limited applications.

Q: What inventory levels are available for each substitute part?

A: IRF9520PBF has 7857 units in stock. IRF9520NPBF has 6585 units in stock. Both parts are available in Tube packaging format.

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