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IRF9510STRR Equivalent & Substitute Parts
Part Overview
The IRF9510STRR is a P-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 4A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement.
The IRF9510STRR serves applications requiring P-channel switching and amplification in moderate-current circuits. Due to its obsolete status, alternative parts with equivalent or enhanced electrical characteristics are required to maintain design continuity and ensure component availability.
Substiute Parts
Key Parameters
| Parameter | Value | Specification |
|---|---|---|
| FET Type | P-Channel | Polarity and switching direction |
| Drain-to-Source Voltage (Vdss) | 100 V | Maximum voltage rating |
| Continuous Drain Current (Id) @ 25°C | 4A (Tc) | Current handling capacity |
| On-State Resistance (Rds On) | 1.2Ω @ 2.4A, 10V | Conduction loss parameter |
| Gate Threshold Voltage (Vgs(th)) | 4V @ 250µA | Gate drive requirement |
| Gate Charge (Qg) | 8.7 nC @ 10V | Switching speed parameter |
| Maximum Gate Voltage (Vgs) | ±20V | Gate drive voltage limit |
| Input Capacitance (Ciss) | 200 pF @ 25V | Gate capacitance |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) | Thermal rating |
| Operating Temperature Range | -55°C to 175°C (TJ) | Junction temperature limits |
| Package Type | TO-263 (D2PAK) | Surface mount package |
| Mounting Type | Surface Mount | PCB assembly method |
Substitute Part Grouping Explanation
Substitute parts for the IRF9510STRR are identified based on strict electrical and mechanical parameter compatibility. The substitution logic is organized into two categories:
Parametric Equivalent (Direct Replacement): Parts that maintain identical electrical specifications across all critical parameters, including Vdss, gate threshold voltage, maximum gate voltage, and operating temperature range. These parts are interchangeable without circuit modification.
Manufacturer Recommended Substitute (Enhanced Performance): Parts that exceed the original specifications in current-handling capacity and power dissipation while maintaining compatibility in voltage ratings, gate drive requirements, and package form factor. These substitutes provide improved performance margins.
Key Parameters Determining Substitution:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
- FET Type: Must be P-Channel
- Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V @ 250µA
- Maximum Gate Voltage (Vgs): Must support ±20V
- Package Type: Must be TO-263 (D2PAK) for mechanical compatibility
- Operating Temperature Range: Must support -55°C to 175°C minimum
Parameter Comparison
| Parameter | IRF9510STRR (Main) | IRF9510STRLPBF (Equivalent) | IRF5210STRLPBF (Recommended) |
|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Infineon Technologies |
| FET Type | P-Channel | P-Channel | P-Channel |
| Vdss (V) | 100 | 100 | 100 |
| Id @ 25°C (A) | 4 | 4 | 38 |
| Rds On (Ω) | 1.2 @ 2.4A, 10V | 1.2 @ 2.4A, 10V | 0.060 @ 38A, 10V |
| Vgs(th) (V) | 4 @ 250µA | 4 @ 250µA | 4 @ 250µA |
| Qg (nC) | 8.7 @ 10V | 8.7 @ 10V | 230 @ 10V |
| Vgs Max (V) | ±20 | ±20 | ±20 |
| Ciss (pF) | 200 @ 25V | 200 @ 25V | 2780 @ 25V |
| Power Dissipation (W) | 3.7 (Ta), 43 (Tc) | 3.7 (Ta), 43 (Tc) | 3.1 (Ta), 170 (Tc) |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 150 |
| Package | TO-263 (D2PAK) | TO-263 (D2PAK) | D2PAK |
| Product Status | Obsolete | Active | Active |
| RoHS Compliance | Non-compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IRF9510STRLPBF (Parametric Equivalent): This part is the direct electrical equivalent of the IRF9510STRR, manufactured by the same supplier (Vishay Siliconix) with identical electrical specifications. The IRF9510STRLPBF is classified as Active product status, ensuring long-term availability and supply chain continuity. This part achieves ROHS3 compliance, addressing regulatory requirements that the obsolete IRF9510STRR does not meet. The parametric equivalence permits direct substitution without circuit redesign. Selection of this part is appropriate for applications requiring exact electrical performance matching and regulatory compliance.
IRF5210STRLPBF (Manufacturer Recommended Substitute): This part is manufactured by Infineon Technologies and provides enhanced electrical performance while maintaining voltage and gate drive compatibility. The IRF5210STRLPBF delivers 38A continuous drain current compared to 4A in the original part, with significantly reduced on-state resistance (60mΩ versus 1.2Ω). Power dissipation capability increases to 170W (Tc) from 43W (Tc). The part maintains identical gate threshold voltage (4V @ 250µA), maximum gate voltage (±20V), and drain-to-source voltage (100V) ratings. The IRF5210STRLPBF is Active product status with ROHS3 compliance. This substitute is suitable for applications where the original current rating is insufficient or where improved thermal performance is required. The higher gate charge (230nC versus 8.7nC) and input capacitance (2780pF versus 200pF) require verification of gate drive circuit capability. The maximum operating temperature is 150°C, which is 25°C lower than the original part.
Frequently Asked Questions (FAQ)
Q: Can the IRF9510STRLPBF be used as a direct replacement for the IRF9510STRR?
A: Yes. The IRF9510STRLPBF is a parametric equivalent with identical electrical specifications across all critical parameters: 100V Vdss, 4A continuous drain current, 1.2Ω Rds On, 4V gate threshold voltage, and ±20V maximum gate voltage. Both parts use the TO-263 (D2PAK) package. The primary difference is product status (Active versus Obsolete) and RoHS compliance (ROHS3 versus non-compliant). No circuit modifications are required.
Q: What are the limitations of using the IRF5210STRLPBF as a substitute?
A: The IRF5210STRLPBF has three operational differences: (1) Gate charge increases from 8.7nC to 230nC, requiring verification that the gate drive circuit can supply the higher charge without exceeding timing requirements; (2) Input capacitance increases from 200pF to 2780pF, which may affect switching speed and gate drive current demands; (3) Maximum operating temperature is 150°C instead of 175°C, which may be limiting in high-temperature applications. The part is otherwise electrically compatible with identical voltage ratings and gate drive requirements.
Q: Are both substitute parts available in the same packaging?
A: Both substitute parts use D2PAK (TO-263) surface mount packages, which are mechanically compatible with the original IRF9510STRR. The IRF9510STRLPBF is supplied in Tape & Reel (TR) packaging, while the IRF5210STRLPBF is supplied in Cut Tape (CT) and Digi-Reel® packaging. These packaging differences affect procurement and assembly processes but do not impact electrical performance or PCB footprint compatibility.
Q: Which substitute part should be selected for new designs?
A: For new designs requiring the exact electrical performance of the IRF9510STRR, the IRF9510STRLPBF is the appropriate selection due to parametric equivalence and Active product status. For applications where higher current capacity or improved thermal performance provides design margin, the IRF5210STRLPBF is suitable provided gate drive circuit capability is verified for the higher gate charge and input capacitance.
Q: Do both substitute parts meet regulatory compliance requirements?
A: Yes. Both IRF9510STRLPBF and IRF5210STRLPBF are ROHS3 compliant, addressing regulatory requirements that the obsolete IRF9510STRR does not meet. Both parts are REACH Unaffected and classified under ECCN EAR99.
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