IRF9510STRL MOSFET P-Channel 100V 4A Equivalent & Substitute Parts

Part Overview

The IRF9510STRL is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 4A continuous drain current in Surface Mount TO-263 (D2PAK) packaging. This device is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. The IRF9510STRL serves applications requiring P-Channel switching and amplification in power management circuits, gate driver circuits, and general-purpose switching applications.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	4	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.2	Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	200	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 43 (Tc)	W
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRF9510STRL is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V minimum
Mounting Type: Surface Mount
Package / Case: TO-263 (D2PAK) compatible footprint

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
Maximum Gate Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 150°C minimum

Substitute parts must maintain electrical compatibility within the specified parameter ranges. Parts with equal or superior current ratings, lower on-resistance, and matching voltage specifications are classified as direct equivalents or upgrades. Current rating exceeding the original specification does not disqualify a part from substitution provided all other parameters remain within acceptable ranges.

Parameter Comparison

Parameter	IRF9510STRL	IRF9510STRLPBF	IRF5210STRLPBF
Manufacturer	Vishay Siliconix	Vishay Siliconix	Infineon Technologies
FET Type	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V	100V	100V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)	4A (Tc)	38A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	1.2Ω @ 2.4A, 10V	1.2Ω @ 2.4A, 10V	60mΩ @ 38A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 10V	8.7nC @ 10V	230nC @ 10V
Vgs (Max)	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V	200pF @ 25V	2780pF @ 25V
Power Dissipation (Max)	3.7W (Ta), 43W (Tc)	3.7W (Ta), 43W (Tc)	3.1W (Ta), 170W (Tc)
Operating Temperature	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)	-55°C to 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF9510STRLPBF (Parametric Equivalent)

The IRF9510STRLPBF is a direct parametric equivalent to the IRF9510STRL. Both devices share identical electrical specifications including 100V Vdss, 4A continuous drain current, 1.2Ω Rds(On), and 8.7nC gate charge. The primary distinction is product status and compliance: IRF9510STRLPBF is Active and ROHS3 Compliant, whereas the original IRF9510STRL is Obsolete and RoHS non-compliant. The IRF9510STRLPBF is supplied in Tape & Reel (TR) packaging with higher inventory availability (3366 Pcs). This part is the preferred direct replacement for the IRF9510STRL in new designs and production continuity applications.

IRF5210STRLPBF (Manufacturer Recommended Upgrade)

The IRF5210STRLPBF is an Infineon Technologies HEXFET® P-Channel MOSFET rated for 100V Vdss with 38A continuous drain current. This device maintains voltage compatibility (100V Vdss) and gate threshold specifications (4V @ 250µA) with the IRF9510STRL. The IRF5210STRLPBF provides significantly enhanced current handling capability (38A versus 4A) and reduced on-resistance (60mΩ versus 1.2Ω), resulting in lower power dissipation and improved thermal performance. The IRF5210STRLPBF is Active, ROHS3 Compliant, and available in high volume (36088 Pcs). This part is suitable for applications requiring higher current capacity or improved efficiency within the same voltage class and package footprint. Gate charge and input capacitance are higher due to the increased current rating; circuit design must account for these differences in switching speed and gate drive requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF9510STRLPBF be used as a direct replacement for the IRF9510STRL?

A: Yes. The IRF9510STRLPBF is a parametric equivalent with identical electrical specifications. Both devices feature 100V Vdss, 4A continuous drain current, 1.2Ω Rds(On), and 8.7nC gate charge. The IRF9510STRLPBF is the preferred replacement due to Active product status and ROHS3 compliance.

Q: What are the key differences between the IRF9510STRLPBF and IRF5210STRLPBF?

A: Both devices maintain 100V Vdss and identical gate threshold voltage (4V @ 250µA). The IRF5210STRLPBF provides higher current rating (38A versus 4A) and lower on-resistance (60mΩ versus 1.2Ω). Gate charge increases from 8.7nC to 230nC, and input capacitance increases from 200pF to 2780pF. These differences require circuit evaluation for switching speed and gate drive compatibility.

Q: Are all three parts compatible with the same PCB footprint?

A: Yes. All three parts use TO-263-3 (D2PAK) packaging with identical mechanical dimensions and pin configuration. PCB layout and thermal management considerations remain consistent across all three devices.

Q: What is the significance of the RoHS compliance difference?

A: The IRF9510STRL is RoHS non-compliant, while IRF9510STRLPBF and IRF5210STRLPBF are ROHS3 Compliant. For applications subject to RoHS regulations or customer requirements, the compliant alternatives (IRF9510STRLPBF or IRF5210STRLPBF) must be selected.

Q: Can the IRF5210STRLPBF be used in circuits designed for the IRF9510STRL?

A: The IRF5210STRLPBF maintains voltage and gate threshold compatibility. However, the significantly higher current rating, lower on-resistance, increased gate charge, and higher input capacitance require circuit analysis. Gate drive circuits must be evaluated for compatibility with the higher gate charge (230nC). Applications with current requirements below 4A will operate within safe margins; however, switching speed and thermal characteristics differ and must be verified for the specific application.

Q: What is the operating temperature range difference between these parts?

A: The IRF9510STRL and IRF9510STRLPBF support -55°C to 175°C (TJ). The IRF5210STRLPBF supports -55°C to 150°C (TJ). For applications requiring operation above 150°C, the IRF9510STRLPBF is the appropriate selection.

Q: How does the increased gate charge of the IRF5210STRLPBF affect circuit design?

A: Gate charge increases from 8.7nC to 230nC. This requires higher gate drive current or longer switching times. Gate driver circuits must be evaluated to ensure adequate drive capability. Switching frequency and power dissipation in the gate drive circuit will increase proportionally.

Q: Are there inventory or lead time considerations for these substitutes?

A: The IRF9510STRLPBF has 3366 Pcs in stock. The IRF5210STRLPBF has 36088 Pcs in stock. Both are significantly higher than the original IRF9510STRL (1440 Pcs). The IRF5210STRLPBF offers the highest inventory availability for applications where current capacity is not a constraint.

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