IRF9510S Equivalent & Substitute Parts

Part Overview

The IRF9510S is a P-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 4A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, which necessitates identification of functionally equivalent alternatives for new designs and production continuity. The IRF9510S operates across a temperature range of -55°C to 175°C and is RoHS non-compliant, reflecting its legacy status in the component market.

Substiute Parts

IRF9510S

Vishay SiliconixIn Stock: 1472IRF9510S Datasheet

Current PartRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF9510S is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 100V minimum
• Package / Case: D2PAK (TO-263-3) surface mount
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
• Maximum Gate Voltage (Vgs): ±20V

Performance Compatibility Parameters:

• Continuous Drain Current (Id): Equal to or greater than 4A
• On-State Resistance (Rds On): Equal to or less than 1.2Ohm at specified conditions
• Operating Temperature Range: Must encompass -55°C to 175°C or provide equivalent thermal performance

The IRF5210STRLPBF qualifies as a direct substitute based on matching all mandatory parameters while providing superior electrical performance characteristics. This device maintains identical voltage ratings, gate threshold specifications, and package configuration, while offering enhanced current handling and reduced on-state resistance.

Parameter Comparison

Engineering Selection Recommendations

The IRF5210STRLPBF is the designated substitute for the obsolete IRF9510S. Selection of this alternative is based on the following engineering criteria:

Product Status Alignment: The IRF9510S is classified as obsolete, creating supply chain risk and limiting availability for new production. The IRF5210STRLPBF maintains active product status with confirmed inventory of 36,088 pieces, ensuring long-term procurement viability.

Regulatory Compliance: The IRF5210STRLPBF is ROHS3 compliant, whereas the IRF9510S is RoHS non-compliant. This compliance status is critical for applications subject to environmental regulations and industry standards requiring RoHS adherence.

Electrical Equivalence: Both devices share identical voltage ratings (100V Vdss), gate threshold specifications (4V @ 250µA), and maximum gate voltage (±20V). The IRF5210STRLPBF provides superior performance with 38A continuous drain current versus 4A, and significantly lower on-state resistance (60mOhm versus 1.2Ohm), enabling enhanced thermal efficiency and reduced power dissipation in applications operating at or below the original 4A specification.

Package Compatibility: Both devices utilize the D2PAK (TO-263-3) surface mount package, ensuring direct physical and electrical compatibility without PCB redesign.

Thermal Considerations: The IRF5210STRLPBF operates across -55°C to 150°C, which covers the lower end of the IRF9510S range (-55°C to 175°C). For applications requiring operation above 150°C, thermal analysis and alternative solutions are necessary.

Frequently Asked Questions (FAQ)

Q: Can the IRF5210STRLPBF directly replace the IRF9510S without circuit modifications?

A: Yes, the IRF5210STRLPBF is a direct substitute for the IRF9510S in applications operating at or below 4A continuous drain current. Both devices share identical voltage ratings, gate threshold specifications, and D2PAK package configuration. No circuit modifications are required for electrical compatibility.

Q: What are the key differences between these two P-Channel MOSFETs?

A: The primary differences are current rating (4A versus 38A), on-state resistance (1.2Ohm versus 60mOhm), gate charge (8.7nC versus 230nC), input capacitance (200pF versus 2780pF), and product status (obsolete versus active). The IRF5210STRLPBF also provides ROHS3 compliance and superior thermal performance.

Q: Does the higher gate charge of the IRF5210STRLPBF affect circuit performance?

A: Gate charge affects switching speed and driver requirements. The IRF5210STRLPBF requires higher gate charge (230nC versus 8.7nC), which may increase switching losses and driver current demands. Circuit-level evaluation is necessary to determine if existing gate drivers can accommodate this parameter difference.

Q: Is the IRF5210STRLPBF suitable for applications requiring operation above 150°C?

A: The IRF5210STRLPBF is rated to 150°C maximum junction temperature, whereas the IRF9510S extends to 175°C. Applications requiring sustained operation above 150°C require alternative component selection or thermal management modifications.

Q: What is the significance of the D2PAK package for these devices?

A: The D2PAK (TO-263-3) is a surface mount package with two leads plus a thermal tab. This package provides efficient heat dissipation through the tab connection to PCB copper planes. Both the IRF9510S and IRF5210STRLPBF use identical D2PAK packaging, ensuring mechanical and thermal compatibility.

Q: Why is the IRF9510S classified as obsolete?

A: The IRF9510S is an older generation P-Channel MOSFET that has been superseded by more advanced alternatives offering improved performance, compliance certifications, and better availability. Obsolete status indicates the manufacturer has discontinued production and support.

Q: Are there any moisture sensitivity considerations for these devices?

A: Both the IRF9510S and IRF5210STRLPBF carry Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life without moisture control measures. Standard handling and storage practices are sufficient.