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IRF9410PBF Equivalent & Substitute Parts
Part Overview
The IRF9410PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 7A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is compliant with RoHS3 and REACH standards. The product status is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 7 | A |
| On-State Resistance (Rds On) @ 7A, 10V | 30 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 1 | V |
| Gate Charge (Qg) @ 10V | 27 | nC |
| Power Dissipation (Max) | 2.5 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-SOIC | — |
Substitute Part Grouping Explanation
Substitution eligibility for the IRF9410PBF is determined by the following critical parameters:
Mandatory Matching Criteria:
- Drain to Source Voltage (Vdss): 30V minimum
- Package Type: 8-SOIC surface mount configuration
- FET Type: N-Channel MOSFET
- Operating Temperature Range: -55°C to 150°C (TJ)
Performance Compatibility Criteria:
- Continuous Drain Current (Id): Equal to or greater than 7A
- On-State Resistance (Rds On): Equal to or less than specified values at rated conditions
- Gate Threshold Voltage (Vgs(th)): Within compatible operating range
- Power Dissipation: Sufficient for application requirements
The identified substitute parts meet these criteria and are therefore electrically and mechanically compatible with the IRF9410PBF in equivalent circuit applications.
Parameter Comparison
| Parameter | IRF9410PBF (Main) | STS10N3LH5 | ZXMN3B04N8TA |
|---|---|---|---|
| Manufacturer | Infineon Technologies | STMicroelectronics | Diodes Incorporated |
| Vdss (V) | 30 | 30 | 30 |
| Id @ 25°C (A) | 7 | 10 | 7.2 |
| Rds On (mOhm) | 30 @ 7A, 10V | 21 @ 5A, 10V | 25 @ 7.2A, 4.5V |
| Vgs(th) (V) | 1 @ 250µA | 1 @ 250µA | 0.7 @ 250µA |
| Qg @ Vgs (nC) | 27 @ 10V | 4.6 @ 5V | 23.1 @ 4.5V |
| Ciss (pF) | 550 @ 25V | 475 @ 25V | 2480 @ 15V |
| Power Dissipation (W) | 2.5 | 2.5 | 2 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | 8-SOIC | 8-SOIC | 8-SOIC |
| Product Status | Discontinued | Not For New Designs | Active |
| RoHS3 Compliant | Yes | Yes | Yes |
Engineering Selection Recommendations
STS10N3LH5 (STMicroelectronics): This substitute provides higher continuous drain current (10A vs. 7A) and improved on-state resistance characteristics. However, the product status is listed as "Not For New Designs," which may limit long-term availability and support. This part is suitable for legacy system maintenance where existing inventory exists.
ZXMN3B04N8TA (Diodes Incorporated): This substitute offers active product status, ensuring ongoing availability and manufacturer support. The continuous drain current (7.2A) closely matches the IRF9410PBF specification, and on-state resistance is comparable. The lower gate threshold voltage (700mV vs. 1V) and reduced power dissipation rating (2W vs. 2.5W) require circuit-level verification for specific applications. This part is recommended for new designs requiring IRF9410PBF functionality.
Both substitutes maintain full compliance with RoHS3 and REACH standards, identical operating temperature ranges, and compatible 8-SOIC packaging.
Frequently Asked Questions (FAQ)
Q: Can STS10N3LH5 directly replace IRF9410PBF in all applications?
A: STS10N3LH5 meets the mandatory electrical and mechanical compatibility criteria (30V Vdss, 8-SOIC package, N-Channel MOSFET, -55°C to 150°C operating range). The higher drain current rating (10A vs. 7A) and improved Rds On characteristics provide enhanced performance margins. However, "Not For New Designs" status indicates limited future availability. Verification of gate drive voltage compatibility with existing circuit design is required.
Q: Is ZXMN3B04N8TA suitable for new product designs?
A: Yes. ZXMN3B04N8TA carries active product status from Diodes Incorporated, ensuring ongoing manufacturing and supply chain support. All mandatory parameters align with IRF9410PBF specifications. The lower gate threshold voltage (700mV) and reduced power dissipation rating (2W) require circuit validation to confirm compatibility with specific application requirements and thermal management design.
Q: Are all substitute parts in the same package?
A: Yes. IRF9410PBF, STS10N3LH5, and ZXMN3B04N8TA are all packaged in 8-SOIC (0.154", 3.90mm width) surface mount configuration, enabling direct PCB footprint compatibility.
Q: What is the primary reason for substitution?
A: IRF9410PBF is discontinued at DiGi Electronics. STS10N3LH5 and ZXMN3B04N8TA provide equivalent electrical performance within the same package type, enabling continued system support and new design implementation.
Q: Do all parts meet environmental compliance standards?
A: Yes. IRF9410PBF, STS10N3LH5, and ZXMN3B04N8TA are all RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.
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