IRF9410 Equivalent & Substitute Parts Reference

Part Overview

The IRF9410 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 7A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts are necessary for ongoing production, maintenance, and new design implementations where this component specification remains applicable.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7	A
Rds On (Max) @ Id, Vgs	30 mOhm @ 7A, 10V	—
Gate Threshold Voltage Vgs(th) (Max)	1	V @ 250µA
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF9410 is determined by the following critical parameters:

Primary Matching Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): Equal to or greater than 7A
Package Type: 8-SOIC surface mount configuration
Operating Temperature Range: -55°C to 150°C (TJ)

Secondary Compatibility Factors:

Rds On (Max): Must not exceed specifications that would degrade circuit performance
Gate Threshold Voltage: Compatible gate drive voltage requirements
Power Dissipation: Thermal management capability

The substitute parts listed below meet or exceed the primary matching criteria and maintain functional equivalence within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter	IRF9410 (Infineon)	STS10N3LH5 (STMicroelectronics)	ZXMN3B04N8TA (Diodes Inc.)
FET Type	N-Channel	N-Channel	N-Channel
Vdss (V)	30	30	30
Id @ 25°C (A)	7	10	7.2
Rds On (Max) (mOhm)	30 @ 7A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V
Vgs(th) (Max) (V)	1 @ 250µA	1 @ 250µA	0.7 @ 250µA
Gate Charge Qg (Max) (nC)	27 @ 10V	4.6 @ 5V	23.1 @ 4.5V
Power Dissipation (Max) (W)	2.5	2.5	2
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Not For New Designs	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STS10N3LH5 (STMicroelectronics): This substitute provides higher continuous drain current (10A vs. 7A) and improved Rds On characteristics (21 mOhm vs. 30 mOhm), resulting in lower on-state losses. The device maintains identical Vdss rating and operating temperature range. STS10N3LH5 is classified as "Not For New Designs," indicating limited long-term availability. RoHS3 compliance provides environmental regulatory advantage over the obsolete IRF9410. This part is suitable for direct replacement in existing production where higher current capability and lower resistance are beneficial.

ZXMN3B04N8TA (Diodes Incorporated): This substitute offers continuous drain current of 7.2A, closely matching the IRF9410 specification. The device features lower gate threshold voltage (700 mV vs. 1V) and reduced gate charge (23.1 nC vs. 27 nC), enabling faster switching response. Rds On is 25 mOhm at 7.2A and 4.5V, representing a performance improvement. ZXMN3B04N8TA carries Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and REACH unaffected status support regulatory requirements. This part is recommended for new designs and long-term production applications requiring IRF9410-equivalent functionality.

Frequently Asked Questions (FAQ)

Q: Can STS10N3LH5 be used as a direct replacement for IRF9410?

A: Yes. Both devices share identical Vdss (30V), package type (8-SOIC), and operating temperature range (-55°C to 150°C). STS10N3LH5 provides higher continuous drain current (10A vs. 7A) and lower Rds On (21 mOhm vs. 30 mOhm), making it functionally superior for the same application envelope. No circuit modifications are required.

Q: Can ZXMN3B04N8TA be used as a direct replacement for IRF9410?

A: Yes. Both devices share identical Vdss (30V), package type (8-SOIC), and operating temperature range (-55°C to 150°C). ZXMN3B04N8TA provides slightly higher continuous drain current (7.2A vs. 7A) and improved switching characteristics. No circuit modifications are required.

Q: What is the primary difference between the two substitute parts?

A: STS10N3LH5 offers higher current capability (10A) and lower Rds On but carries "Not For New Designs" status. ZXMN3B04N8TA provides closely matched current (7.2A), lower gate threshold voltage, and Active product status with guaranteed long-term availability.

Q: Are both substitutes RoHS compliant?

A: Yes. Both STS10N3LH5 and ZXMN3B04N8TA are ROHS3 compliant, whereas the IRF9410 is RoHS non-compliant. This provides regulatory advantage for new production and export applications.

Q: Do the substitutes require different gate drive voltages?

A: Both substitutes operate within compatible gate drive voltage ranges. STS10N3LH5 specifies ±22V maximum Vgs, and ZXMN3B04N8TA specifies ±12V maximum Vgs. Existing gate drive circuits designed for IRF9410 (±20V maximum Vgs) are compatible with both substitutes.

Q: Which substitute is recommended for new designs?

A: ZXMN3B04N8TA is recommended for new designs due to its Active product status, ensuring long-term supply availability and manufacturing consistency. STS10N3LH5 is suitable for legacy production support where higher current capability is advantageous.

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