IRF9328PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9328PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in 8-SO packaging. The IRF9328PBF is discontinued at DiGi Electronics, making identification of functionally equivalent substitute components essential for ongoing production and design continuity. Equivalent parts must maintain compatibility across voltage ratings, current handling, gate drive requirements, and thermal characteristics to ensure direct replacement capability.

Substiute Parts

IRF9328PBF

Infineon TechnologiesIn Stock: 1161IRF9328PBF Datasheet

Current PartRFQ

RRH090P03GZETB

Rohm SemiconductorIn Stock: 2338RRH090P03GZETB Datasheet

MFR RecommendedRFQ

RRH100P03GZETB

Rohm SemiconductorIn Stock: 2129RRH100P03GZETB Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF9328PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel topology required
• Drain to Source Voltage (Vdss): 30V minimum rating
• Continuous Drain Current (Id): Minimum 9A at rated temperature
• Gate Drive Voltage: Compatible with 4V to 10V drive range
• Rds On (Max): Must not exceed application thermal limits
• Vgs(th): Threshold voltage within ±20V gate supply range
• Package: 8-SOIC (0.154", 3.90mm Width) surface mount form factor
• Compliance: ROHS3 Compliant, MSL 1 rating

The substitute parts RRH090P03GZETB and RRH100P03GZETB from Rohm Semiconductor meet these criteria with continuous drain currents of 9A and 10A respectively, both rated at 30V Vdss. Both devices are housed in 8-SOP packaging compatible with 8-SOIC footprints and maintain full ROHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

RRH100P03GZETB Selection Rationale:

The RRH100P03GZETB represents the closest electrical equivalent to the IRF9328PBF. This Rohm Semiconductor device maintains the 30V Vdss rating and delivers 10A continuous drain current, providing 83% of the original part's current capacity. The Rds On specification of 12.6 mOhm at 10A, 10V is within 6% of the IRF9328PBF's 11.9 mOhm specification, ensuring comparable on-state losses. Both devices share identical ±20V gate voltage ratings and compatible threshold voltage characteristics. The 8-SOIC package footprint is mechanically identical, enabling direct PCB layout compatibility. RRH100P03GZETB carries ROHS3 compliance and MSL 1 rating, matching the original part's environmental and regulatory status.

RRH090P03GZETB Alternative:

The RRH090P03GZETB provides a lower-current alternative at 9A continuous drain rating. This device is suitable for applications where the full 12A capacity of the IRF9328PBF is not required. The 15.4 mOhm Rds On specification represents a 30% increase in on-state resistance compared to the original part, resulting in higher conduction losses. This device maintains full voltage and gate drive compatibility and shares identical package and compliance characteristics.

Product Status Consideration:

Both substitute parts carry "Not For New Designs" status from Rohm Semiconductor, indicating these are legacy components. For new design initiatives, consultation with component suppliers for current-generation P-Channel MOSFETs rated 30V, 10A+ is recommended to identify actively manufactured alternatives.

Frequently Asked Questions (FAQ)

Q: Can RRH100P03GZETB directly replace IRF9328PBF in existing designs?

A: Yes, for applications where continuous drain current requirements do not exceed 10A. The RRH100P03GZETB maintains identical 30V Vdss rating, compatible gate drive voltage range (±20V), and identical 8-SOIC package footprint. Rds On performance is within 6% of the original specification. Thermal design must account for the reduced power dissipation rating (650mW vs. 2.5W).

Q: What are the key differences between RRH090P03GZETB and RRH100P03GZETB?

A: The primary difference is continuous drain current rating: RRH090P03GZETB is rated 9A while RRH100P03GZETB is rated 10A. Correspondingly, Rds On specifications differ (15.4 mOhm vs. 12.6 mOhm at their respective rated currents). Gate charge increases from 56 nC to 68 nC, and input capacitance increases from 3000 pF to 3600 pF. Both devices share identical voltage ratings and package specifications.

Q: Are there thermal considerations when substituting these parts?

A: Yes. The IRF9328PBF is rated 2.5W power dissipation, while both Rohm substitutes are rated 650mW. In high-current or high-frequency switching applications, thermal management must be reassessed. The reduced power dissipation rating may require increased heatsinking or reduced operating current to maintain equivalent junction temperatures.

Q: Do the substitute parts require PCB layout modifications?

A: No. Both RRH090P03GZETB and RRH100P03GZETB use 8-SOIC packaging with identical 0.154" (3.90mm) width specifications as the IRF9328PBF. Direct footprint compatibility is maintained without layout changes.

Q: What is the significance of the "Not For New Designs" status?

A: This designation indicates that Rohm Semiconductor is not actively promoting these parts for new product development. While existing inventory is available and parts remain fully functional, long-term availability cannot be guaranteed. For production designs with extended lifecycle requirements, evaluation of current-generation alternatives is prudent.

Q: Are compliance and regulatory certifications identical across all three parts?

A: Yes. IRF9328PBF, RRH090P03GZETB, and RRH100P03GZETB all carry ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, REACH Unaffected status, and EAR99 ECCN classification. No regulatory or environmental qualification differences exist.