IRF9310PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9310PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 20A continuous drain current at 25°C. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF9310PBF is currently discontinued at DiGi Electronics, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity. Equivalent alternatives must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package specifications to ensure direct circuit substitution without redesign.

Substiute Parts

IRF9310PBF

Infineon TechnologiesIn Stock: 8296IRF9310PBF Datasheet

Current PartRFQ

DMG4413LSS-13

Diodes IncorporatedIn Stock: 4525DMG4413LSS-13 Datasheet

MFR RecommendedRFQ

FDS6681Z

onsemiIn Stock: 80187FDS6681Z Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF9310PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel topology required
• Drain to Source Voltage (Vdss): Minimum 30V rating
• Current - Continuous Drain (Id): Minimum 20A at 25°C
• Rds On (Max): Not to exceed 4.6 mOhm @ 20A, 10V
• Package / Case: 8-SOIC (0.154", 3.90mm Width) surface mount
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS3 Compliance and MSL Level 1 required

Secondary Compatibility Parameters:

• Vgs(th) (Max) @ Id: Maximum 2.4V @ 100µA
• Gate Charge (Qg): Electrical performance indicator
• Input Capacitance (Ciss): Switching characteristic parameter
• Vgs (Max): Gate voltage rating tolerance

Two substitute parts meet these criteria and are listed below.

Parameter Comparison

Engineering Selection Recommendations

FDS6681Z (onsemi) - Primary Substitute

The FDS6681Z is the preferred direct substitute for the IRF9310PBF. This device maintains identical electrical specifications across all critical parameters: 30V Vdss rating, 20A continuous drain current, and 4.6 mOhm Rds On at 20A and 10V gate voltage. The FDS6681Z is part of the PowerTrench® series and is currently in active production status with high inventory availability (80,099 pcs). The device meets all compliance requirements including ROHS3 certification and MSL Level 1 moisture sensitivity rating. The 8-SOIC package dimensions match the original specification exactly. Gate charge is higher at 260 nC versus 165 nC, and input capacitance is elevated at 7540 pF versus 5250 pF, which may affect switching speed in high-frequency applications but does not prevent functional substitution in standard circuit topologies.

DMG4413LSS-13 (Diodes Incorporated) - Secondary Substitute

The DMG4413LSS-13 is a partial substitute suitable only for applications where continuous drain current requirements do not exceed 10.5A. This device shares the 30V Vdss rating and 8-SOIC package specification with the IRF9310PBF. However, the reduced current rating (10.5A versus 20A) and higher Rds On value (7.5 mOhm @ 13A, 10V versus 4.6 mOhm @ 20A, 10V) result in increased power dissipation and thermal stress in high-current circuits. The DMG4413LSS-13 is currently in active production with 4,506 pcs in stock and meets all compliance certifications. This substitute is applicable only to circuits designed for lower current operation or where thermal margins permit the increased on-resistance penalty.

Frequently Asked Questions (FAQ)

Q: Can the FDS6681Z directly replace the IRF9310PBF without circuit modification?

A: Yes. The FDS6681Z maintains identical Vdss (30V), Id (20A), and Rds On (4.6 mOhm @ 20A, 10V) specifications. The 8-SOIC package footprint is identical. Higher gate charge (260 nC versus 165 nC) may require gate driver adjustment in switching applications above 1 MHz, but standard gate drivers accommodate this variation.

Q: Is the DMG4413LSS-13 a full equivalent to the IRF9310PBF?

A: No. The DMG4413LSS-13 is a partial substitute limited to applications requiring maximum 10.5A continuous drain current. The reduced current rating and higher Rds On (7.5 mOhm @ 13A, 10V) make this device unsuitable for circuits designed for the full 20A specification of the IRF9310PBF.

Q: What is the impact of higher gate charge in the FDS6681Z?

A: Gate charge of 260 nC (FDS6681Z) versus 165 nC (IRF9310PBF) increases gate drive energy requirements and may extend switching transition times. In applications operating below 500 kHz, this difference is negligible. High-frequency switching circuits (>1 MHz) should verify gate driver capability to supply the additional charge within acceptable time windows.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IRF9310PBF, FDS6681Z, and DMG4413LSS-13 are all ROHS3 compliant with MSL Level 1 (unlimited moisture sensitivity) rating, meeting current environmental and reliability standards.

Q: What is the package compatibility between these three devices?

A: All three devices use the 8-SOIC (0.154", 3.90mm Width) surface mount package. PCB footprints are identical, and no layout modification is required for substitution.

Q: Why is the IRF9310PBF discontinued?

A: The IRF9310PBF is discontinued at DiGi Electronics. The FDS6681Z and DMG4413LSS-13 are active production parts with ongoing inventory support, making them the recommended alternatives for new designs and production continuity.

Q: Can input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) of 7540 pF (FDS6681Z) versus 5250 pF (IRF9310PBF) represents a 43% increase. In high-impedance gate drive circuits or applications with slow gate drivers, this may increase switching delay. Standard gate drivers with output impedance below 10 Ohms are unaffected.