IRF8915TR MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8915TR is a dual N-channel MOSFET manufactured by Infineon Technologies, configured as a 2N-channel logic level gate device with a maximum drain-source voltage of 20V and continuous drain current of 8.9A. The device is housed in an 8-SOIC surface mount package and is part of the HEXFET® series.

The IRF8915TR is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRF8915TR

Infineon TechnologiesIn Stock: 3686IRF8915TR Datasheet

Current PartRFQ

IRF8915TRPBF

Infineon TechnologiesIn Stock: 55333IRF8915TRPBF Datasheet

DirectRFQ

BSO220N03MDGXUMA1

Infineon TechnologiesIn Stock: 16003BSO220N03MDGXUMA1 Datasheet

MFR RecommendedRFQ

DMG6898LSDQ-13

Diodes IncorporatedIn Stock: 13481DMG6898LSDQ-13 Datasheet

MFR RecommendedRFQ

FDS6890A

onsemiIn Stock: 20291FDS6890A Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF8915TR is determined by strict adherence to the following electrical and mechanical parameters:

Critical Substitution Criteria:

• Drain to Source Voltage (Vdss): Must be equal to or greater than 20V
• Configuration: Must be 2 N-Channel (Dual) in a single package
• Package / Case: Must be 8-SOIC (0.154", 3.90mm Width) or mechanically compatible equivalent
• Mounting Type: Must be Surface Mount
• Operating Temperature Range: Must encompass -55°C to 150°C (TJ)

Performance Parameters for Compatibility Assessment:

• Continuous Drain Current (Id) @ 25°C: Substitute must meet or exceed 8.9A
• Rds On (Max): Lower or equal resistance values indicate improved performance
• Gate Threshold Voltage (Vgs(th)): Logic level operation required (typically ≤ 2.5V)
• Maximum Power Dissipation: Must support application thermal requirements

The following substitute parts meet these criteria and are presented in order of electrical and compliance alignment.

Parameter Comparison

Engineering Selection Recommendations

IRF8915TRPBF (Infineon Technologies)

IRF8915TRPBF is the direct equivalent of IRF8915TR with identical electrical specifications. This part is supplied in Cut Tape (CT) and Digi-Reel® packaging with significantly higher inventory availability (55,300 pcs). The primary distinction is RoHS3 compliance status. IRF8915TRPBF maintains the same HEXFET® series designation, gate charge characteristics, and on-resistance profile. Product status remains obsolete; however, this variant provides superior supply chain continuity for existing designs.

DMG6898LSDQ-13 (Diodes Incorporated)

DMG6898LSDQ-13 is an active product offering improved drain current capability (9.5A versus 8.9A) at the same 20V Vdss rating. This part demonstrates lower on-resistance (16 mOhm @ 9.4A, 4.5V) and lower gate threshold voltage (1.5V), providing enhanced switching performance. The higher gate charge (26 nC) and input capacitance (1149 pF) represent trade-offs in switching speed. RoHS3 compliance and active product status support long-term availability. Moisture sensitivity level is 1 (Unlimited), matching the original part.

BSO220N03MDGXUMA1 (Infineon Technologies)

BSO220N03MDGXUMA1 is an active OptiMOS™ series device with elevated Vdss rating (30V) and reduced continuous drain current (6A). This part is suitable for applications where higher voltage margin is required. The 22 mOhm on-resistance and 10 nC gate charge represent moderate performance trade-offs. Moisture sensitivity level is 3 (168 Hours), requiring controlled storage conditions. RoHS3 compliance and active status ensure supply availability.

FDS6890A (onsemi)

FDS6890A is an active PowerTrench® series device rated at 20V Vdss with 7.5A continuous drain current. This part exhibits 18 mOhm on-resistance and logic level gate operation. Notably, the gate charge (32 nC) and input capacitance (2130 pF) are significantly elevated, indicating slower switching characteristics. Maximum power dissipation is reduced to 900 mW. RoHS3 compliance and active product status support availability. This part is suitable for applications with relaxed switching speed requirements.

Frequently Asked Questions (FAQ)

Q1: Can IRF8915TRPBF be used as a direct replacement for IRF8915TR?

A: Yes. IRF8915TRPBF is electrically and mechanically identical to IRF8915TR. Both devices share the same HEXFET® series designation, identical Vdss (20V), Id (8.9A), Rds On (18.3 mOhm), gate charge (7.4 nC), and input capacitance (540 pF) specifications. The primary difference is RoHS3 compliance status in IRF8915TRPBF. Both parts are classified as obsolete; however, IRF8915TRPBF offers superior inventory availability.

Q2: What are the key differences between IRF8915TR and DMG6898LSDQ-13?

A: Both devices are rated at 20V Vdss and housed in 8-SOIC packages. DMG6898LSDQ-13 provides higher continuous drain current (9.5A versus 8.9A) and lower on-resistance (16 mOhm versus 18.3 mOhm). However, DMG6898LSDQ-13 exhibits higher gate charge (26 nC versus 7.4 nC) and significantly higher input capacitance (1149 pF versus 540 pF), resulting in slower switching performance. DMG6898LSDQ-13 is an active product, whereas IRF8915TR is obsolete.

Q3: Is BSO220N03MDGXUMA1 suitable for direct substitution in all applications?

A: BSO220N03MDGXUMA1 is not a direct substitute for all applications. While it maintains the 8-SOIC package and dual N-channel configuration, the reduced continuous drain current (6A versus 8.9A) and elevated Vdss (30V versus 20V) indicate different application targeting. BSO220N03MDGXUMA1 is appropriate for designs requiring higher voltage margin but lower current handling. Moisture sensitivity level 3 (168 Hours) requires controlled storage conditions, unlike the original part's MSL 1 (Unlimited).

Q4: Why does FDS6890A have significantly higher gate charge and input capacitance?

A: FDS6890A is designed with the PowerTrench® technology platform, which prioritizes different performance characteristics than the HEXFET® series used in IRF8915TR. The elevated gate charge (32 nC) and input capacitance (2130 pF) reflect design trade-offs favoring on-resistance and current handling over switching speed. This part is suitable for applications where switching frequency is not critical and lower on-state losses are prioritized.

Q5: What packaging considerations apply to these substitute parts?

A: All substitute parts are housed in 8-SOIC (0.154", 3.90mm Width) surface mount packages, maintaining mechanical compatibility with IRF8915TR. IRF8915TRPBF is supplied in Cut Tape (CT) and Digi-Reel® packaging. DMG6898LSDQ-13, BSO220N03MDGXUMA1, and FDS6890A are supplied in Tape & Reel (TR) packaging. These packaging formats are standard for high-volume surface mount assembly and do not affect PCB layout compatibility.

Q6: Are all substitute parts RoHS3 compliant?

A: IRF8915TR is RoHS non-compliant. All substitute parts—IRF8915TRPBF, DMG6898LSDQ-13, BSO220N03MDGXUMA1, and FDS6890A—are RoHS3 compliant. This compliance status is relevant for applications subject to RoHS regulations or customer requirements mandating compliant components.

Q7: What is the significance of Moisture Sensitivity Level (MSL) differences?

A: IRF8915TR, IRF8915TRPBF, DMG6898LSDQ-13, and FDS6890A are rated MSL 1 (Unlimited), permitting indefinite storage without moisture control. BSO220N03MDGXUMA1 is rated MSL 3 (168 Hours), requiring controlled storage conditions and limiting shelf life to 168 hours after moisture barrier bag opening. This difference impacts inventory management and supply chain logistics.