IRF8788PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8788PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 24A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in the 8-SO package configuration. The IRF8788PBF is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	24	A
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 24A, 10V	—
Vgs(th) (Max) @ Id	2.35V @ 100µA	—
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 4.5V	—
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF8788PBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Substitution Criteria:

FET Type: N-Channel topology
Drain to Source Voltage (Vdss): 30V minimum rating
Continuous Drain Current (Id): Minimum 24A at 25°C
On-State Resistance (Rds On): Maximum 2.8 mOhm @ 24A, 10V
Gate Threshold Voltage (Vgs(th)): Maximum 2.35V @ 100µA
Gate Charge (Qg): Maximum 66 nC @ 4.5V
Power Dissipation: Minimum 2.5W
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount
Package: 8-SOIC (0.154", 3.90mm Width)
Compliance: ROHS3 Compliant, REACH Unaffected

The BSO033N03MSGXUMA1 is identified as a manufacturer-recommended substitute. This device maintains the same Vdss rating, operating temperature range, package footprint, and compliance certifications. However, the continuous drain current rating is 17A, which is lower than the IRF8788PBF specification of 24A. The on-state resistance is 3.3 mOhm @ 22A, 10V, which exceeds the maximum specification of 2.8 mOhm. These differences indicate the BSO033N03MSGXUMA1 is suitable only for applications where the reduced current and increased resistance are acceptable.

Parameter Comparison

Parameter	IRF8788PBF	BSO033N03MSGXUMA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	30	30	V
Current - Continuous Drain (Id) @ 25°C	24	17	A
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 24A, 10V	3.3 mOhm @ 22A, 10V	—
Vgs(th) (Max) @ Id	2.35V @ 100µA	2V @ 250µA	—
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 4.5V	124 nC @ 10V	—
Power Dissipation (Max)	2.5	1.56	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Discontinued at DiGi Electronics	Not For New Designs	—

Engineering Selection Recommendations

The IRF8788PBF is discontinued at DiGi Electronics. The BSO033N03MSGXUMA1 is identified as the manufacturer-recommended substitute and maintains electrical and mechanical compatibility within the 8-SOIC package footprint. Both devices are ROHS3 compliant and REACH unaffected.

The BSO033N03MSGXUMA1 carries a product status of "Not For New Designs," indicating it is also subject to discontinuation. Selection of this substitute is appropriate only when application requirements accommodate the reduced continuous drain current (17A versus 24A) and increased on-state resistance (3.3 mOhm versus 2.8 mOhm).

For applications requiring the full electrical specifications of the IRF8788PBF, alternative N-Channel MOSFETs rated for 30V, 24A continuous drain current, and 8-SOIC package configuration from other manufacturers should be evaluated based on identical electrical parameter alignment.

Frequently Asked Questions (FAQ)

Q: Can the BSO033N03MSGXUMA1 be used as a direct replacement for the IRF8788PBF?

A: The BSO033N03MSGXUMA1 shares the same package footprint (8-SOIC), voltage rating (30V), and operating temperature range. However, the continuous drain current is rated at 17A compared to 24A for the IRF8788PBF, and the on-state resistance is 3.3 mOhm versus 2.8 mOhm. Direct substitution is possible only in applications where these reduced electrical specifications are acceptable.

Q: What are the key electrical differences between these two devices?

A: The primary differences are continuous drain current (24A versus 17A), on-state resistance (2.8 mOhm versus 3.3 mOhm), gate charge (66 nC versus 124 nC), and power dissipation (2.5W versus 1.56W). These differences affect switching speed, thermal performance, and maximum current handling capability.

Q: Are both devices compatible with the same PCB layout?

A: Yes. Both devices use the 8-SOIC package with identical footprint dimensions (0.154", 3.90mm width). PCB layout modifications are not required for package compatibility.

Q: What is the significance of the product status "Not For New Designs"?

A: This status indicates the manufacturer does not recommend the BSO033N03MSGXUMA1 for new circuit designs and may discontinue production. It is suitable for replacement or repair of existing designs only.

Q: Are there compliance differences between the two devices?

A: Both devices are ROHS3 compliant and REACH unaffected. Compliance certifications are equivalent.

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