IRF8736PBF N-Channel 30V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8736PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 18A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	18	A
On-State Resistance (Rds On) @ 18A, 10V	4.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 50µA	2.35	V
Gate Charge (Qg) @ 4.5V	26	nC
Input Capacitance (Ciss) @ 15V	2315	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitute parts for the IRF8736PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for mechanical compatibility
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must support -55°C to 150°C
FET Type: Must be N-Channel MOSFET

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 18A at 25°C
On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support thermal requirements of the application

Substitutes are grouped into two categories: Direct Manufacturer Recommended parts (verified by manufacturers as suitable replacements) and Cross-Compatible parts (meeting all electrical and mechanical specifications). All substitute parts listed maintain RoHS3 compliance and REACH compliance status consistent with the original part.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ Vgs (nC)	Ciss @ 15V (pF)	Power Diss (W)	Package	Status
IRF8736PBF	Infineon	30	18	4.8 @ 18A	26 @ 4.5V	2315	2.5	8-SOIC	Discontinued
BSO040N03MSGXUMA1	Infineon	30	16	4.0 @ 20A	73 @ 10V	5700	1.56	8-SOIC	Not For New Designs
RJK0349DSP-00#J0	Renesas	30	20	3.8 @ 10A	25 @ 4.5V	3850	2.5	8-SOIC	Active
AO4430	Alpha & Omega	30	18	5.5 @ 18A	124 @ 10V	7270	3.0	8-SOIC	Not For New Designs
DMN3007LSS-13	Diodes Inc.	30	16	7.0 @ 15A	64.2 @ 10V	2714	2.5	8-SOIC	Active
NTMS4802NR2G	onsemi	30	11.1	4.0 @ 18A	36 @ 4.5V	5300	0.91	8-SOIC	Obsolete
SI4634DY-T1-GE3	Vishay	30	24.5	5.2 @ 15A	68 @ 10V	3150	2.5	8-SOIC	Active
SI4842BDY-T1-GE3	Vishay	30	28	4.2 @ 20A	100 @ 10V	3650	3.0	8-SOIC	Active
STS10N3LH5	STMicroelectronics	30	10	21 @ 5A	4.6 @ 5V	475	2.5	8-SOIC	Not For New Designs

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status):

The RJK0349DSP-00#J0 (Renesas Electronics) is the preferred substitute for new designs. This part maintains 30V Vdss rating, exceeds the 18A current requirement at 20A continuous drain current, and features superior on-state resistance of 3.8mOhm at 10A. The device is in Active product status, ensuring long-term availability and supply chain stability. Operating temperature range matches the original specification (-55°C to 150°C), and 8-SOIC packaging provides direct mechanical compatibility.

The SI4634DY-T1-GE3 (Vishay Siliconix TrenchFET®) and SI4842BDY-T1-GE3 (Vishay Siliconix TrenchFET®) are alternative Active-status options. Both devices maintain 30V Vdss and 8-SOIC packaging. The SI4634DY-T1-GE3 provides 24.5A continuous drain current with 5.2mOhm on-state resistance. The SI4842BDY-T1-GE3 offers the highest current capability at 28A with 4.2mOhm on-state resistance, suitable for applications requiring enhanced current handling.

The DMN3007LSS-13 (Diodes Incorporated) is an Active-status alternative rated for 16A continuous drain current at 30V. This part maintains compatibility with the 8-SOIC package and -55°C to 150°C operating range. On-state resistance of 7mOhm at 15A is higher than the original specification but remains within acceptable limits for many applications.

Secondary Substitutes (Not For New Designs / Obsolete Status):

The BSO040N03MSGXUMA1 (Infineon OptiMOS™) is manufacturer-recommended but carries "Not For New Designs" status. This part provides 16A continuous drain current and improved 4mOhm on-state resistance at 20A. Use only for legacy system maintenance or when supply of Active alternatives is unavailable.

The AO4430 (Alpha & Omega Semiconductor) matches the original 18A rating and 8-SOIC package but is marked "Not For New Designs." On-state resistance of 5.5mOhm is slightly higher than the original 4.8mOhm specification.

The STS10N3LH5 (STMicroelectronics STripFET™ V) is marked "Not For New Designs" and provides only 10A continuous drain current, below the 18A requirement. This part is suitable only for applications with reduced current demands.

The NTMS4802NR2G (onsemi) is Obsolete status and provides only 11.1A continuous drain current, insufficient for full-specification replacement.

Compliance and Certification:

All recommended substitutes maintain RoHS3 compliance and REACH compliance status. Moisture Sensitivity Level (MSL) ratings are consistent with the original part (MSL 1 - Unlimited for most alternatives). All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, matching the original regulatory classification.

Frequently Asked Questions (FAQ)

Q: Can I use the SI4842BDY-T1-GE3 as a direct replacement for the IRF8736PBF?

A: Yes. Both devices maintain 30V Vdss rating, 8-SOIC package type, and -55°C to 150°C operating temperature range. The SI4842BDY-T1-GE3 provides 28A continuous drain current, exceeding the original 18A specification. On-state resistance of 4.2mOhm at 20A is superior to the original 4.8mOhm at 18A. The device is in Active product status, ensuring long-term availability. Direct mechanical and electrical compatibility is confirmed.

Q: What is the difference between the RJK0349DSP-00#J0 and the IRF8736PBF?

A: Both devices are rated for 30V Vdss and feature 8-SOIC packaging. The RJK0349DSP-00#J0 provides 20A continuous drain current compared to the original 18A, and features lower on-state resistance of 3.8mOhm at 10A versus 4.8mOhm at 18A. Gate charge is comparable at 25nC versus 26nC. The RJK0349DSP-00#J0 is manufactured by Renesas Electronics and maintains Active product status, providing superior supply chain availability.

Q: Why is the NTMS4802NR2G listed as a substitute if it only provides 11.1A?

A: The NTMS4802NR2G is listed based on the provided substitute cross-reference data but carries Obsolete product status. This part is unsuitable for applications requiring the full 18A continuous drain current specification. Use only if application current requirements are below 11.1A and no other alternatives are available.

Q: Are all substitute parts available in the same packaging as the IRF8736PBF?

A: Yes. All listed substitute parts use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, providing mechanical compatibility with existing PCB layouts. Pin configuration and lead spacing are identical, enabling direct socket replacement without PCB redesign.

Q: What is the significance of "Not For New Designs" status?

A: Parts marked "Not For New Designs" are in mature or declining production phases. While electrically functional and available in current inventory, manufacturers do not recommend their use in new circuit designs due to potential future discontinuation. For new designs, select parts with Active product status such as RJK0349DSP-00#J0, SI4634DY-T1-GE3, SI4842BDY-T1-GE3, or DMN3007LSS-13.

Q: How do I select between multiple Active-status alternatives?

A: Selection depends on application-specific requirements. For maximum current capability, choose SI4842BDY-T1-GE3 (28A). For lowest on-state resistance, choose RJK0349DSP-00#J0 (3.8mOhm at 10A). For lowest gate charge and switching losses, choose RJK0349DSP-00#J0 (25nC at 4.5V). For cost-optimized solutions with adequate performance, choose DMN3007LSS-13 (16A, Active status). All maintain full electrical and mechanical compatibility with the original IRF8736PBF specification.

Q: Do all substitutes maintain the same thermal characteristics?

A: Power dissipation ratings vary. The original IRF8736PBF is rated for 2.5W. The RJK0349DSP-00#J0 and DMN3007LSS-13 also provide 2.5W. The SI4842BDY-T1-GE3 and AO4430 provide 3.0W. The BSO040N03MSGXUMA1 provides 1.56W. Lower on-state resistance values in substitute parts may result in reduced power dissipation in high-current applications, improving thermal performance.

Q: Are there any compliance or certification differences between the original and substitute parts?

A: All listed substitute parts maintain RoHS3 compliance and REACH compliance status consistent with the original IRF8736PBF. Moisture Sensitivity Level (MSL) ratings are equivalent (MSL 1 - Unlimited for most alternatives). ECCN and HTSUS classifications match the original part, ensuring regulatory compatibility in export and procurement processes.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message