IRF8721GPBF Equivalent & Substitute Parts

Part Overview

The IRF8721GPBF is an N-Channel 30V MOSFET manufactured by Infineon Technologies, rated for 14A continuous drain current at 25°C with 2.5W power dissipation in an 8-SO surface mount package. This device belongs to the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across critical electrical parameters including drain-source voltage, continuous drain current, on-resistance characteristics, and thermal specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	14	A
On-Resistance (Rds On Max) @ 14A, 10V	8.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	2.35	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	Surface Mount
Gate Charge (Qg) @ 4.5V	12	nC

Substitute Part Grouping Explanation

Substitution eligibility for the IRF8721GPBF is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-Source Voltage (Vdss): Must equal 30V
Package Type: Must be 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must span -55°C to 150°C (TJ)
Gate Voltage Rating (Vgs Max): Must be ±20V or greater

Secondary Compatibility Criteria:

Continuous Drain Current (Id): Substitute must support minimum 14A or provide equivalent thermal performance
On-Resistance (Rds On): Lower or equal values at rated conditions ensure functional compatibility
Power Dissipation: Must support 2.5W or greater at Ta conditions
Gate Charge (Qg): Values within reasonable range for switching applications

The substitute parts listed below meet all primary criteria and maintain electrical compatibility within the specified parameter ranges. Substitutes are grouped by their active product status and compliance certifications.

Parameter Comparison

Parameter	IRF8721GPBF	FDS6680A	FDS8880	SI4420BDY-T1-E3	SI4686DY-T1-GE3	STS10N3LH5
Manufacturer	Infineon	onsemi	onsemi	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	14	12.5	11.6	9.5	18.2	10
Rds On Max @ 10V (mOhm)	8.5	9.5	10	8.5	9.5	21
Vgs(th) Max (V)	2.35	3	2.5	3	3	1
Qg Max (nC)	12	23	30	50	26	4.6
Power Dissipation Max (W)	2.5	2.5	2.5	1.4	3 / 5.2	2.5
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Not For New Designs
RoHS Compliance	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status):

FDS6680A (onsemi PowerTrench®): This substitute provides the closest electrical match to the IRF8721GPBF with 12.5A continuous drain current, 9.5mOhm on-resistance at 10V, and 2.5W power dissipation. The device is ROHS3 compliant and carries active product status with 50,400 units in stock. The slightly higher gate charge (23nC vs. 12nC) and input capacitance (1620pF vs. 1040pF) are within acceptable ranges for most switching applications.

FDS8880 (onsemi PowerTrench®): This substitute offers 11.6A continuous drain current with 10mOhm on-resistance and 2.5W power dissipation. ROHS3 compliant with active status and 38,100 units available. The higher gate charge (30nC) requires consideration in high-frequency switching circuits.

SI4686DY-T1-GE3 (Vishay Siliconix TrenchFET®, WFET®): This substitute exceeds the IRF8721GPBF specifications with 18.2A continuous drain current (Tc) and enhanced power dissipation (3W Ta, 5.2W Tc). On-resistance is 9.5mOhm at 10V. ROHS3 compliant with active status and 28,900 units in stock. Suitable for applications requiring higher current capacity.

Secondary Substitutes (Limited Applicability):

SI4420BDY-T1-E3 (Vishay Siliconix TrenchFET®): This substitute provides 9.5A continuous drain current with 8.5mOhm on-resistance, matching the IRF8721GPBF on-resistance specification. However, power dissipation is limited to 1.4W (Ta), which is below the original specification. ROHS3 compliant and active status with 1,696 units in stock. Suitable only for applications with lower power requirements.

STS10N3LH5 (STMicroelectronics STripFET™ V): This substitute provides 10A continuous drain current but exhibits significantly higher on-resistance (21mOhm at 5A, 10V) compared to the IRF8721GPBF. Product status is "Not For New Designs." Use only for legacy system maintenance where no other alternatives are available. ROHS3 compliant with 15,265 units in stock.

Frequently Asked Questions (FAQ)

Q: Can FDS6680A directly replace IRF8721GPBF in all applications?

A: FDS6680A is compatible with IRF8721GPBF in applications where continuous drain current requirements do not exceed 12.5A. The 30V Vdss rating, 8-SOIC package, and operating temperature range are identical. On-resistance (9.5mOhm vs. 8.5mOhm) and power dissipation (2.5W) are equivalent. Verify gate charge and input capacitance compatibility with your circuit design, as these parameters differ slightly.

Q: What is the difference between the substitute parts in terms of current capacity?

A: FDS6680A supports 12.5A, FDS8880 supports 11.6A, SI4686DY-T1-GE3 supports 18.2A (Tc), SI4420BDY-T1-E3 supports 9.5A, and STS10N3LH5 supports 10A. The IRF8721GPBF is rated for 14A. Select substitutes based on your application's actual current requirements, not solely on the original part's rating.

Q: Are all substitute parts RoHS compliant?

A: FDS6680A, FDS8880, SI4420BDY-T1-E3, SI4686DY-T1-GE3, and STS10N3LH5 are all ROHS3 compliant. The original IRF8721GPBF does not specify RoHS status. All substitutes meet current environmental compliance requirements.

Q: Why does STS10N3LH5 have "Not For New Designs" status?

A: STS10N3LH5 is classified as "Not For New Designs" by STMicroelectronics, indicating the manufacturer is phasing out this product line. While it remains available (15,265 units in stock), it should be used only for legacy system maintenance or repair. For new designs, select from FDS6680A, FDS8880, or SI4686DY-T1-GE3.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and driver circuit requirements. The IRF8721GPBF has 12nC @ 4.5V. FDS6680A has 23nC @ 5V, FDS8880 has 30nC @ 10V, SI4420BDY-T1-E3 has 50nC @ 10V, SI4686DY-T1-GE3 has 26nC @ 10V, and STS10N3LH5 has 4.6nC @ 5V. Higher gate charge requires more driver current or longer switching times. Verify your gate driver can supply adequate current for the selected substitute.

Q: Can SI4686DY-T1-GE3 be used in place of IRF8721GPBF despite higher current rating?

A: Yes. SI4686DY-T1-GE3 with 18.2A rating exceeds the IRF8721GPBF 14A requirement and is electrically compatible across all critical parameters (30V Vdss, 8-SOIC package, -55°C to 150°C operating range). The higher current capacity and power dissipation (3W Ta, 5.2W Tc) provide design margin. Verify gate charge (26nC) compatibility with your driver circuit.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use the 8-SOIC (0.154", 3.90mm Width) package, identical to the IRF8721GPBF. PCB footprints and soldering processes are directly compatible. No layout modifications are required for package substitution.

Q: Which substitute offers the best overall compatibility?

A: FDS6680A provides the closest electrical match with 12.5A continuous drain current, 9.5mOhm on-resistance, 2.5W power dissipation, and active product status. It is ROHS3 compliant with 50,400 units in stock, ensuring long-term availability. Use FDS6680A as the primary substitute for most applications.

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