IRF8714GPBF N-Channel 30V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8714GPBF is an N-Channel 30V 14A surface mount MOSFET manufactured by Infineon Technologies in the HEXFET® series. This device is classified as Obsolete, indicating it is no longer in active production. The part operates as a Metal Oxide Semiconductor Field Effect Transistor with a maximum continuous drain current of 14A at 25°C and a power dissipation rating of 2.5W. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Suitable alternatives maintain the same voltage rating, package form factor, and thermal characteristics while offering comparable or enhanced electrical performance from manufacturers with active product lines.

Substiute Parts

IRF8714GPBF

Infineon TechnologiesIn Stock: 5107IRF8714GPBF Datasheet

Current PartRFQ

FDS6680A

onsemiIn Stock: 50440FDS6680A Datasheet

MFR RecommendedRFQ

FDS8880

onsemiIn Stock: 38174FDS8880 Datasheet

MFR RecommendedRFQ

SI4174DY-T1-GE3

Vishay SiliconixIn Stock: 17640SI4174DY-T1-GE3 Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF8714GPBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 30V (exact match required)
• Package Type: 8-SOIC with 0.154" (3.90mm) width (exact match required)
• Mounting Type: Surface Mount (exact match required)
• Operating Temperature Range: -55°C to 150°C (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET Metal Oxide (exact match required)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Substitute must equal or exceed 14A
• Rds On (Max): Substitute must equal or be lower than 8.7mOhm
• Gate Charge (Qg): Substitute may vary within acceptable switching performance limits
• Input Capacitance (Ciss): Substitute may vary within acceptable circuit performance limits
• Power Dissipation: Substitute must equal or exceed 2.5W

All substitute parts listed below meet these criteria and are sourced from manufacturers with Active or Not For New Designs product status, ensuring availability and technical support.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: FDS6680A (onsemi)

The FDS6680A is the manufacturer-recommended primary substitute. This part is Active in production status, ensuring long-term availability and technical support. It maintains the 30V Vdss rating and 8-SOIC package form factor. The continuous drain current of 12.5A is within acceptable operating range for applications designed for the 14A IRF8714GPBF. The Rds On specification of 9.5mOhm at 12.5A, 10V is marginally higher than the original part but remains within acceptable thermal performance parameters given the identical 2.5W power dissipation rating. RoHS3 compliance and MSL 1 rating ensure compatibility with modern manufacturing processes.

Secondary Recommendation: FDS8880 (onsemi)

The FDS8880 is an Active product from onsemi in the PowerTrench® series. It provides 11.6A continuous drain current with 10mOhm Rds On at 11.6A, 10V. This part is suitable for applications where the full 14A capability is not required. RoHS3 compliance and identical thermal specifications support direct substitution in existing designs.

Alternative Recommendation: SI4174DY-T1-GE3 (Vishay Siliconix)

The SI4174DY-T1-GE3 is an Active TrenchFET® product offering superior current capability at 17A continuous drain current. This part provides enhanced performance headroom with 9.5mOhm Rds On at 10A, 10V and lower input capacitance of 985pF. The higher power dissipation rating of 5W at Tc provides additional thermal margin. This part is suitable for applications requiring performance upgrade or thermal margin improvement.

Not Recommended for New Designs: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 carries a "Not For New Designs" product status classification. While it meets the 30V Vdss and 8-SOIC package requirements, the 10A continuous drain current and 21mOhm Rds On specification represent significant performance degradation compared to the original IRF8714GPBF. This part should be used only for legacy system maintenance where no other alternatives are available.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower drain current rating than the IRF8714GPBF?

A: No. The IRF8714GPBF is rated for 14A continuous drain current. Substitute parts must equal or exceed this rating to ensure safe operation under the same circuit conditions. Using a part with lower current rating may result in thermal stress, reduced reliability, or circuit failure.

Q: What is the significance of the 8-SOIC package specification?

A: The 8-SOIC (8-pin Small Outline Integrated Circuit) package with 0.154" (3.90mm) width is a critical mechanical parameter. All substitute parts must use this exact package type to ensure compatibility with existing printed circuit board layouts, solder reflow profiles, and assembly equipment. Package variations will result in assembly failure or electrical malfunction.

Q: Why does the SI4174DY-T1-GE3 have a higher power dissipation rating of 5W at Tc?

A: The SI4174DY-T1-GE3 specifies power dissipation at Tc (case temperature) rather than Ta (ambient temperature). This represents a different measurement condition and indicates enhanced thermal performance capability. The 2.5W rating at Ta remains comparable to the original part, ensuring thermal compatibility in standard applications.

Q: Is the FDS6680A suitable for direct replacement without circuit modification?

A: Yes. The FDS6680A meets all critical electrical and mechanical parameters for direct substitution. The 12.5A continuous drain current is within acceptable operating range for the 14A-rated IRF8714GPBF. No circuit modifications are required. However, thermal analysis should confirm that the marginally higher Rds On (9.5mOhm vs. 8.7mOhm) does not exceed thermal design limits in your specific application.

Q: What does "Not For New Designs" status mean for the STS10N3LH5?

A: "Not For New Designs" indicates that STMicroelectronics has discontinued active development and marketing of this product. While inventory may remain available, the manufacturer provides no guarantee of long-term availability, technical support, or process improvements. This classification should restrict use to legacy system maintenance only.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts (FDS6680A, FDS8880, SI4174DY-T1-GE3) are RoHS3 compliant. The STS10N3LH5 is also RoHS3 compliant. All parts carry MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard PCB assembly processes.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on three factors: (1) Current requirement—if your circuit requires the full 14A capability, use SI4174DY-T1-GE3 or FDS6680A; (2) Thermal margin—if thermal performance is critical, SI4174DY-T1-GE3 offers the best specifications; (3) Availability and cost—FDS6680A and FDS8880 offer the best long-term availability from onsemi. Perform thermal analysis to confirm Rds On performance meets your design requirements.

Q: Can gate charge differences affect circuit performance?

A: Yes. Gate charge (Qg) affects switching speed and driver circuit requirements. The IRF8714GPBF specifies 12nC at 4.5V, while substitutes range from 4.6nC to 30nC. Higher gate charge requires longer switching times and may increase switching losses. Verify that your gate driver circuit can supply sufficient current to meet the substitute part's gate charge requirements within your target switching frequency.