IRF8707PBF N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8707PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in 8-SO packaging. The IRF8707PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing production and design requirements. Suitable alternatives must maintain electrical compatibility across voltage ratings, current handling, gate charge characteristics, and thermal performance while conforming to the same package footprint and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11	A
On-Resistance (Rds On Max) @ 11A, 10V	11.9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	2.35	V
Gate Charge (Qg) @ 4.5V	9.3	nC
Input Capacitance (Ciss) @ 15V	760	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF8707PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥11A at 25°C
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for PCB compatibility
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must span -55°C to 150°C (TJ)
FET Type: Must be N-Channel MOSFET (Metal Oxide)
Compliance: Must be ROHS3 Compliant

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Must support 2.5W thermal budget

All substitute parts listed below meet the primary criteria. Variations in secondary parameters are noted to enable informed selection based on specific application requirements.

Parameter Comparison

Parameter	IRF8707PBF	BSO110N03MSGXUMA1	DMN3016LSS-13	DMN4468LSS-13	FDS6690A	FDS8878	STS10N3LH5
Manufacturer	Infineon	Infineon	Diodes Inc.	Diodes Inc.	onsemi	Fairchild	STMicroelectronics
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	11	10	10.3	10	11	10.2	10
Rds On Max @ 10V (mOhm)	11.9	11	12	14	12.5	14	21
Vgs(th) (V)	2.35	2	2.5	1.95	3	2.5	1
Qg @ Vgs (nC)	9.3 @ 4.5V	20 @ 10V	25.1 @ 10V	18.85 @ 10V	16 @ 5V	26 @ 10V	4.6 @ 5V
Ciss @ Vds (pF)	760 @ 15V	1500 @ 15V	1415 @ 15V	867 @ 10V	1205 @ 15V	897 @ 15V	475 @ 25V
Power Dissipation Max (W)	2.5	1.56	1.5	1.52	2.5	2.5	2.5
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Discontinued	Active	Active	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	Not specified	ROHS3

Engineering Selection Recommendations

Primary Recommendation: FDS6690A (onsemi)

The FDS6690A is the closest functional equivalent to the IRF8707PBF. Both devices share identical electrical specifications: 30V Vdss, 11A continuous drain current, and 2.5W power dissipation. The FDS6690A is manufactured by onsemi under the PowerTrench® series and maintains active product status with ROHS3 compliance. The 8-SOIC package footprint is identical, ensuring direct PCB compatibility. Gate charge and input capacitance characteristics are comparable, supporting equivalent switching performance in most applications.

Secondary Recommendation: DMN4468LSS-13 (Diodes Incorporated)

The DMN4468LSS-13 provides an alternative from Diodes Incorporated with 30V Vdss and 10A continuous drain current. While the current rating is slightly lower than the IRF8707PBF, the device maintains active product status and ROHS3 compliance. The 8-SOIC package is compatible. On-resistance is 14mOhm at 10V, which is acceptable for applications not requiring the full 11A specification. This part is suitable for designs with reduced current demands or where thermal margin is available.

Alternative Recommendation: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 offers 30V Vdss with 10.3A continuous drain current and 1.5W power dissipation. This device is active and ROHS3 compliant with 8-SOIC packaging. The lower power dissipation rating may be advantageous in thermally constrained applications. On-resistance of 12mOhm at 10V is comparable to the IRF8707PBF.

Not Recommended for New Designs: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 carries a "Not For New Designs" status from STMicroelectronics. Although it meets the 30V, 10A, and 8-SOIC requirements, its discontinued design status makes it unsuitable for new product development. The significantly higher on-resistance of 21mOhm at 10V also indicates inferior thermal performance compared to the IRF8707PBF.

Compliance Verification:

All recommended substitutes maintain ROHS3 compliance and REACH Unaffected status, ensuring regulatory compatibility with the original IRF8707PBF. Moisture sensitivity levels are acceptable for standard manufacturing processes.

Frequently Asked Questions (FAQ)

Q1: Can the FDS6690A directly replace the IRF8707PBF without circuit modifications?

A: Yes. The FDS6690A shares identical voltage and current ratings (30V, 11A), matching power dissipation (2.5W), and compatible 8-SOIC package footprint. Gate charge and input capacitance are within acceptable ranges for equivalent switching behavior. No circuit modifications are required for direct substitution.

Q2: Why is the DMN4468LSS-13 rated for 10A instead of 11A?

A: The DMN4468LSS-13 is specified with 10A continuous drain current at 25°C, which is 1A lower than the IRF8707PBF. This device is suitable for applications operating below 11A or where thermal margin permits operation at reduced current levels. Verify application current requirements before selection.

Q3: What is the significance of the different gate charge (Qg) values among substitutes?

A: Gate charge affects switching speed and gate drive power requirements. The IRF8707PBF specifies 9.3nC at 4.5V, while substitutes range from 4.6nC to 26nC depending on measurement conditions. Lower gate charge reduces switching losses and simplifies gate drive design. Verify gate drive circuit compatibility with the selected substitute's Qg specification.

Q4: Are all substitute parts available in the same packaging?

A: Yes. All recommended substitutes use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, ensuring identical PCB footprint compatibility with the IRF8707PBF. No layout modifications are required.

Q5: Why is STS10N3LH5 marked "Not For New Designs"?

A: STMicroelectronics has discontinued the STS10N3LH5 for new design applications. While existing inventory may be available, this status indicates the manufacturer is transitioning customers to alternative products. New designs should select from active-status alternatives such as FDS6690A or DMN4468LSS-13.

Q6: What is the difference between Tc and Ta temperature specifications?

A: Ta refers to ambient temperature, while Tc refers to case temperature. The IRF8707PBF uses Ta specification (11A @ Ta), while STS10N3LH5 uses Tc specification (10A @ Tc). Both devices operate across -55°C to 150°C junction temperature range. Verify thermal management design accommodates the specified measurement condition.

Q7: How do input capacitance differences affect circuit design?

A: Input capacitance (Ciss) ranges from 475pF to 1500pF among substitutes. Higher capacitance increases gate charge and switching losses. The IRF8707PBF specifies 760pF at 15V. Substitutes with significantly higher Ciss (BSO110N03MSGXUMA1 at 1500pF) may require gate drive circuit optimization. Verify gate driver current capability for the selected substitute.

Q8: Can I use a substitute with lower power dissipation rating?

A: Substitutes with lower power dissipation ratings (DMN3016LSS-13 at 1.5W, DMN4468LSS-13 at 1.52W) are acceptable if application thermal analysis confirms the device operates within its power budget. These devices may offer improved thermal efficiency but require verification that actual power dissipation remains below the rated maximum.

Q9: Are all substitutes ROHS3 compliant?

A: All recommended substitutes except FDS8878 are explicitly ROHS3 compliant. FDS8878 compliance status is not specified in available documentation. For applications requiring ROHS3 certification, select from FDS6690A, DMN4468LSS-13, DMN3016LSS-13, BSO110N03MSGXUMA1, or STS10N3LH5.

Q10: What is the moisture sensitivity level (MSL) requirement?

A: The IRF8707PBF specifies MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Most substitutes also specify MSL 1, except BSO110N03MSGXUMA1 (MSL 3, 168 Hours). MSL 3 devices require controlled storage and handling within 168 hours of package opening. Verify manufacturing process compatibility with MSL requirements.

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