IRF8707GPBF N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8707GPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in 8-SO surface mount configuration and is classified as Obsolete product status. Due to its obsolete classification, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Substiute Parts

IRF8707GPBF
Infineon TechnologiesIn Stock: 9687IRF8707GPBF Datasheet
IRF8707GPBF
Current Part
AO4468
Alpha & Omega Semiconductor Inc.In Stock: 60329AO4468 Datasheet
AO4468
MFR Recommended
DMN3016LSS-13
Diodes IncorporatedIn Stock: 6860DMN3016LSS-13 Datasheet
DMN3016LSS-13
MFR Recommended
FDS6690A
onsemiIn Stock: 40000FDS6690A Datasheet
FDS6690A
MFR Recommended
FDS8878
Fairchild SemiconductorIn Stock: 32909FDS8878 Datasheet
FDS8878
MFR Recommended
RXH125N03TB1
Rohm SemiconductorIn Stock: 2796RXH125N03TB1 Datasheet
RXH125N03TB1
MFR Recommended
STS10N3LH5
STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet
STS10N3LH5
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 11 A
On-State Resistance (Rds On) @ 11A, 10V 11.9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA 2.35 V
Gate Charge (Qg) @ 4.5V 9.3 nC
Input Capacitance (Ciss) @ 15V 760 pF
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package Type 8-SOIC -
Mounting Type Surface Mount -

Substitute Part Grouping Explanation

Substitution eligibility for the IRF8707GPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must equal 30V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Mounting Type: Must be Surface Mount
  • Package/Case: Must be 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature Range: Must support -55°C to 150°C

Secondary Compatibility Parameters:

  • Continuous Drain Current (Id): Acceptable range 10A to 12.5A at 25°C
  • On-State Resistance (Rds On): Acceptable range 11.9mOhm to 14mOhm @ 10V
  • Gate Threshold Voltage (Vgs(th)): Acceptable range 1V to 3V
  • Power Dissipation: Acceptable range 1.5W to 3.1W
  • Gate Charge (Qg): Acceptable range 4.6nC to 26nC
  • Input Capacitance (Ciss): Acceptable range 475pF to 1415pF

All substitute parts listed below meet the primary criteria and fall within acceptable ranges for secondary parameters, ensuring functional and thermal compatibility with the original IRF8707GPBF design.

Parameter Comparison

Parameter IRF8707GPBF AO4468 DMN3016LSS-13 FDS6690A FDS8878 RXH125N03TB1 STS10N3LH5
Manufacturer Infineon Alpha & Omega Diodes Inc. onsemi Fairchild Rohm STMicroelectronics
Vdss (V) 30 30 30 30 30 30 30
Id @ 25°C (A) 11 10.5 10.3 11 10.2 12.5 10
Rds On @ 10V (mOhm) 11.9 14 12 12.5 14 12 21
Vgs(th) (V) 2.35 3 2.5 3 2.5 2.5 1
Qg (nC) 9.3 24 25.1 16 26 12.7 4.6
Ciss (pF) 760 1200 1415 1205 897 1000 475
Power Dissipation (W) 2.5 3.1 1.5 2.5 2.5 2 2.5
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Product Status Obsolete Not For New Designs Active Active Active Active Not For New Designs
RoHS Compliance REACH Unaffected ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant REACH Unaffected ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For New Designs: Select from parts with Active product status: FDS6690A (onsemi), DMN3016LSS-13 (Diodes Incorporated), or RXH125N03TB1 (Rohm Semiconductor). These parts ensure long-term availability and manufacturer support. FDS6690A provides the closest electrical match to the IRF8707GPBF with identical 11A drain current rating and 2.5W power dissipation, combined with Active product status and ROHS3 compliance.

For Field Replacement or Legacy Support: Parts marked "Not For New Designs" (AO4468, STS10N3LH5) are acceptable for replacement applications where the original IRF8707GPBF is no longer available. These parts maintain electrical compatibility within specified parameter ranges.

Compliance Considerations: All substitute parts listed carry either ROHS3 Compliant or REACH Unaffected status, meeting current regulatory requirements. Selection should align with your manufacturing and supply chain compliance requirements.

Thermal Management: DMN3016LSS-13 offers the lowest power dissipation at 1.5W, suitable for thermally constrained applications. RXH125N03TB1 provides the highest drain current rating (12.5A) with 2W dissipation, offering thermal margin for high-current applications.

Frequently Asked Questions (FAQ)

Q: Can I directly replace IRF8707GPBF with any of these substitute parts?

A: Yes, all listed substitute parts are electrically and mechanically compatible. They share identical 30V Vdss rating, 8-SOIC package configuration, and surface mount mounting type. Drain current ratings range from 10A to 12.5A, all within acceptable operating parameters for the IRF8707GPBF application envelope.

Q: What is the difference between 8-SO and 8-SOIC packaging?

A: The IRF8707GPBF is specified as 8-SO, while substitute parts use 8-SOIC designation. Both refer to the same 8-pin Small Outline Integrated Circuit package with 0.154" (3.90mm) width. These are mechanically and electrically interchangeable in PCB layouts designed for standard 8-SOIC footprints.

Q: Why is the IRF8707GPBF marked as Obsolete?

A: Obsolete status indicates the manufacturer (Infineon) has discontinued production and no longer provides technical support or warranty. Substitute parts from active manufacturers ensure continued availability and manufacturer backing for new production requirements.

Q: Which substitute part has the lowest on-state resistance?

A: DMN3016LSS-13 and RXH125N03TB1 both offer 12mOhm Rds On at 10V, compared to the original 11.9mOhm. FDS6690A provides 12.5mOhm. These differences are negligible for most applications and fall within normal manufacturing tolerances.

Q: Are there any gate charge differences I should consider?

A: Yes. The IRF8707GPBF has 9.3nC gate charge at 4.5V. Substitute parts range from 4.6nC (STS10N3LH5) to 26nC (FDS8878). Lower gate charge enables faster switching; higher gate charge may require stronger gate drive circuits. Select based on your gate driver capability and switching frequency requirements.

Q: What is the significance of Product Status "Not For New Designs"?

A: This status indicates the manufacturer continues production but recommends against using the part in new circuit designs. These parts remain suitable for field replacements and legacy system support where the original part is unavailable. For new production, select parts with Active status.

Q: Do all substitute parts support the full -55°C to 150°C operating range?

A: All listed parts support -55°C to 150°C junction temperature range except RXH125N03TB1, which specifies 150°C maximum without lower temperature specification in provided data. Verify RXH125N03TB1 lower temperature limit with Rohm Semiconductor if operation below 0°C is required.

Q: Which substitute offers the best thermal performance?

A: DMN3016LSS-13 provides the lowest power dissipation at 1.5W (Ta), reducing thermal load on the PCB and heat sink. This part is optimal for thermally constrained designs or high-frequency switching applications where heat generation must be minimized.

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