IRF840LCSTRRPBF N-Channel 500V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF840LCSTRRPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 8A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for high-voltage switching applications. The part is currently Active in product status with 671 pieces in stock inventory.

Equivalent and substitute parts are identified when design requirements change, inventory constraints occur, or when alternative manufacturers' components meet the same electrical and mechanical specifications. The IRF840LCSTRRPBF operates across a temperature range of -55°C to 150°C (TJ) and complies with RoHS3 standards with MSL Level 1 (Unlimited) moisture sensitivity rating.

Substiute Parts

IRF840LCSTRRPBF

Vishay SiliconixIn Stock: 764IRF840LCSTRRPBF Datasheet

Current PartRFQ

STB11NK50ZT4

STMicroelectronicsIn Stock: 4404STB11NK50ZT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF840LCSTRRPBF is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 500V
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Allowable Parameter Variations: Substitute parts may exceed the continuous drain current (Id) specification, as higher current ratings provide design margin without compromising circuit function. Similarly, lower on-resistance (Rds On) values are acceptable as they reduce power dissipation. Gate charge (Qg) and input capacitance (Ciss) may vary within the constraints of the same package and voltage class, as these parameters affect switching speed and gate drive requirements but do not prevent functional substitution.

The STB11NK50ZT4 from STMicroelectronics meets all mandatory matching parameters and is identified as a manufacturer-recommended substitute.

Parameter Comparison

Engineering Selection Recommendations

STB11NK50ZT4 as Primary Substitute:

The STB11NK50ZT4 manufactured by STMicroelectronics is a direct substitute for the IRF840LCSTRRPBF. Both devices share identical voltage ratings (500V Vdss), identical package configuration (TO-263-3, D2PAK), and identical operating temperature range (-55°C to 150°C). Both components are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity.

The STB11NK50ZT4 provides enhanced electrical performance characteristics: continuous drain current is rated at 10A compared to 8A, and on-resistance (Rds On) is specified at 520mOhm versus 850mOhm. These improvements result in lower power dissipation during operation. The STB11NK50ZT4 is part of the SuperMESH™ series from STMicroelectronics and is currently Active in product status with 4361 pieces in stock inventory.

Both parts are suitable for direct PCB layout substitution without modification to the circuit board design, as they utilize identical D2PAK surface mount packaging with the same lead configuration and thermal tab interface.

Frequently Asked Questions (FAQ)

Q: Can the STB11NK50ZT4 be used as a direct replacement for the IRF840LCSTRRPBF on the same PCB?

A: Yes. Both devices use identical TO-263-3 (D2PAK) surface mount packaging with the same lead spacing, lead configuration, and thermal tab dimensions. No PCB layout modifications are required for substitution.

Q: What are the key electrical differences between these two parts?

A: The STB11NK50ZT4 has a higher continuous drain current rating (10A versus 8A) and lower on-resistance (520mOhm versus 850mOhm). Both devices maintain the same 500V drain-to-source voltage rating and ±30V gate voltage rating. The gate charge of the STB11NK50ZT4 is higher (68nC versus 39nC), which affects gate drive circuit timing but does not prevent substitution.

Q: Are both parts RoHS compliant?

A: Yes. Both the IRF840LCSTRRPBF and STB11NK50ZT4 are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating.

Q: What is the operating temperature range for both devices?

A: Both devices operate across the same temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility in the same application environment.

Q: Does the higher gate charge of the STB11NK50ZT4 affect circuit design?

A: Gate charge affects the switching speed and gate drive circuit requirements. The STB11NK50ZT4 has a gate charge of 68nC compared to 39nC for the IRF840LCSTRRPBF. Gate drive circuits must be capable of supplying sufficient current to charge the gate within the required switching time. Existing gate drive circuits designed for the IRF840LCSTRRPBF may require evaluation to confirm adequate drive capability for the STB11NK50ZT4.

Q: What is the difference in input capacitance between these parts?

A: The STB11NK50ZT4 has an input capacitance (Ciss) of 1390pF at 25V compared to 1100pF for the IRF840LCSTRRPBF. Higher input capacitance increases the gate charge requirement and may affect switching frequency performance in high-frequency applications.

Q: Can the STB11NK50ZT4 handle higher current than the IRF840LCSTRRPBF?

A: Yes. The STB11NK50ZT4 is rated for 10A continuous drain current at 25°C compared to 8A for the IRF840LCSTRRPBF. This higher current rating provides additional design margin and allows operation at higher current levels without exceeding device specifications.

Q: Are there any packaging or moisture sensitivity differences?

A: No. Both devices use identical D2PAK surface mount packaging and both have MSL Level 1 (Unlimited) moisture sensitivity rating, indicating no moisture sensitivity constraints during storage or handling.