IRF840LCSTRR Equivalent & Substitute Parts

Part Overview

The IRF840LCSTRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 8A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and is suitable for high-voltage switching applications requiring moderate current handling in compact surface mount form factors.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	8	A
Rds On (Max) @ 4.8A, 10V	850	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	39	nC
Input Capacitance (Ciss) @ 25V	1100	pF
Power Dissipation (Max)	3.1 (Ta), 125 (Tc)	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF840LCSTRR is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Equivalence Criteria:

Drain to Source Voltage (Vdss): 500V
Continuous Drain Current (Id): 8A or greater
Gate Drive Voltage: 10V
Package Type: TO-263 (D2PAK) surface mount
Operating Temperature Range: -55°C to 150°C minimum

Substitution Categories:

Parametric Equivalents maintain identical electrical specifications and package form factor. These parts are direct functional replacements with no circuit redesign required.

Manufacturer Recommended Alternatives meet or exceed the primary electrical specifications but may differ in secondary parameters such as gate charge, input capacitance, or on-resistance. These parts are suitable for applications where the IRF840LCSTRR specifications define the minimum acceptable performance envelope.

Parameter Comparison

Parameter	IRF840LCSTRR	IRF840LCSTRL	IRF840LCSTRRPBF	R5009ANJTL	STB11NK50ZT4
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Rohm Semiconductor	STMicroelectronics
Vdss (V)	500	500	500	500	500
Id @ 25°C (A)	8	8	8	9	10
Rds On (Max) @ 10V (mOhm)	850	850	850	720	520
Vgs(th) (Max) (V)	4	4	4	4.5	4.5
Gate Charge (Qg) @ 10V (nC)	39	39	39	21	68
Ciss @ 25V (pF)	1100	1100	1100	650	1390
Power Dissipation (Tc) (W)	125	125	125	50	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	LPTS	D2PAK
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	Non-compliant	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF840LCSTRL is a parametric equivalent manufactured by Vishay Siliconix with identical electrical specifications and package configuration. This part is in active product status and maintains full compatibility with the IRF840LCSTRR across all primary electrical parameters. The IRF840LCSTRL is suitable for direct substitution in existing designs without circuit modification.

IRF840LCSTRRPBF is a parametric equivalent supplied in Tape & Reel packaging format. This part maintains identical electrical specifications and is ROHS3 compliant, addressing environmental compliance requirements. The packaging format difference (Tape & Reel versus bulk) affects procurement and assembly processes but does not alter electrical performance. This part is in active product status.

R5009ANJTL is a manufacturer-recommended alternative from Rohm Semiconductor. This part exceeds the IRF840LCSTRR specifications in continuous drain current (9A versus 8A) and provides improved on-resistance performance (720 mOhm versus 850 mOhm). The R5009ANJTL features reduced gate charge (21 nC versus 39 nC), resulting in faster switching characteristics. The package designation differs (LPTS versus D2PAK), requiring verification of mechanical compatibility with existing PCB layouts. This part is ROHS3 compliant and in active product status.

STB11NK50ZT4 is a manufacturer-recommended alternative from STMicroelectronics. This part exceeds the IRF840LCSTRR specifications in continuous drain current (10A versus 8A) and provides superior on-resistance performance (520 mOhm versus 850 mOhm). The STB11NK50ZT4 is part of the SuperMESH™ series and maintains the D2PAK package form factor. Gate charge is higher (68 nC versus 39 nC), resulting in increased switching losses. This part is ROHS3 compliant and in active product status with high inventory availability.

Frequently Asked Questions (FAQ)

Q: Can IRF840LCSTRL be used as a direct replacement for IRF840LCSTRR?

A: Yes. The IRF840LCSTRL is a parametric equivalent with identical electrical specifications, gate drive voltage, on-resistance, and package configuration. No circuit redesign is required. Both parts are N-Channel MOSFETs rated for 500V with 8A continuous drain current in TO-263 (D2PAK) surface mount packages.

Q: What is the difference between IRF840LCSTRR and IRF840LCSTRRPBF?

A: The IRF840LCSTRRPBF is the same part supplied in Tape & Reel packaging format, whereas the IRF840LCSTRR is supplied in bulk packaging. Electrical specifications are identical. The IRF840LCSTRRPBF is ROHS3 compliant. The packaging format affects procurement, storage, and assembly processes but not electrical performance.

Q: Can R5009ANJTL replace IRF840LCSTRR in all applications?

A: The R5009ANJTL meets or exceeds the electrical specifications of the IRF840LCSTRR with higher continuous drain current (9A) and lower on-resistance (720 mOhm). However, the package type differs (LPTS versus D2PAK). PCB layout compatibility must be verified before substitution. The reduced gate charge may improve switching performance in some applications.

Q: What are the advantages of STB11NK50ZT4 over IRF840LCSTRR?

A: The STB11NK50ZT4 provides higher continuous drain current (10A versus 8A) and significantly lower on-resistance (520 mOhm versus 850 mOhm), resulting in reduced power dissipation and improved efficiency. The D2PAK package is mechanically compatible with the IRF840LCSTRR. Gate charge is higher (68 nC), which may increase switching losses in high-frequency applications.

Q: Are all substitute parts ROHS3 compliant?

A: The IRF840LCSTRR is RoHS non-compliant. The IRF840LCSTRL is RoHS non-compliant. The IRF840LCSTRRPBF, R5009ANJTL, and STB11NK50ZT4 are all ROHS3 compliant, meeting current environmental regulations.

Q: What is the significance of gate charge differences among these parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (IRF840LCSTRL: 39 nC, R5009ANJTL: 21 nC) results in faster switching and lower gate drive power requirements. Higher gate charge (STB11NK50ZT4: 68 nC) increases switching losses but may provide improved noise immunity in some circuit topologies.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Interchangeability in high-frequency applications depends on gate charge and input capacitance. The R5009ANJTL features the lowest gate charge (21 nC) and reduced input capacitance (650 pF), making it suitable for high-frequency operation. The STB11NK50ZT4 has higher gate charge (68 nC) and input capacitance (1390 pF), which may limit switching frequency. Circuit simulation or testing is necessary to confirm performance at target frequencies.

Q: What inventory considerations apply to these substitute parts?

A: The IRF840LCSTRR (obsolete) has 949 units in stock. The IRF840LCSTRL has 2800 units available. The IRF840LCSTRRPBF has 671 units available. The R5009ANJTL has 765 units available. The STB11NK50ZT4 has 4361 units available, providing the highest inventory availability for long-term procurement planning.

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