IRF840LCSPBF Equivalent & Substitute Parts Reference

Part Overview

The IRF840LCSPBF is an N-Channel MOSFET (Transistors, FETs, MOSFETs category) produced by Vishay Siliconix, supplied in a TO-263 (D2PAK) surface mount package. It features a high drain-to-source voltage of 500V and a continuous drain current of 8A (Tc). This product is actively manufactured and compliant with ROHS3 and MSL 1 requirements, making it suitable for power switching and motor control applications. Seeking alternative models is necessary to address supply chain continuity, mitigate lead-time risks, and provide pin-to-pin and performance-compatible options in equipment that utilizes this MOSFET.

Substiute Parts

IRF840LCSPBF
Vishay SiliconixIn Stock: 4114IRF840LCSPBF Datasheet
IRF840LCSPBF
Current Part
STB11NK50ZT4
STMicroelectronicsIn Stock: 4404STB11NK50ZT4 Datasheet
STB11NK50ZT4
MFR Recommended

Key Parameters

ParameterIRF840LCSPBF
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product StatusActive

Substitute Part Grouping Explanation

Engineering substitution for IRF840LCSPBF is determined strictly by these allowed parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds(on), Vgs(th), maximum gate charge, Vgs(max), input capacitance, power dissipation capabilities, operating temperature range, mounting type, and package or case compatibility. The substitute part STB11NK50ZT4 from STMicroelectronics falls within these parameter ranges, with identical package, voltage class, and suitable electrical ratings for interchangeable use in compatible PCB footprints and designs. All parts maintain active product status and satisfy RoHS and MSL requirements.

Parameter Comparison

Parameter IRF840LCSPBF
(Vishay Siliconix)
STB11NK50ZT4
(STMicroelectronics)
FET TypeN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V500 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V520mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V68 nC @ 10 V
Vgs (Max)±30V±30V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V1390 pF @ 25 V
Power Dissipation (Max)3.1W (Ta), 125W (Tc)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface Mount
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS StatusROHS3 CompliantROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)1 (Unlimited)
Product StatusActiveActive

Engineering Selection Recommendations

Both IRF840LCSPBF and STB11NK50ZT4 have active status and full RoHS3 compliance. Moisture Sensitivity Level (MSL) 1 and equivalent package outlines enable direct substitution in qualified assembly processes that require unlimited floor life. No difference in environmental or compliance certifications is indicated between these models, supporting their consideration within production environments with strict manufacturing controls.

Frequently Asked Questions (FAQ)

Q1: What parameters must match for IRF840LCSPBF MOSFET substitution?
Substitution requires consistent FET type, technology, drain-to-source voltage, continuous drain current, maximum Rds(on), gate charge, allowed Vgs, power dissipation, operating temperature, mounting type, and package or case format.

Q2: Are STB11NK50ZT4 and IRF840LCSPBF pin-to-pin compatible?
Both devices utilize the TO-263 (D2PAK) package and share matching lead configurations, supporting mechanical and electrical compatibility in PCB footprints designed to the package standard.

Q3: Does substituting with STB11NK50ZT4 change compliance or handling procedures?
No change; both are ROHS3 compliant, with MSL 1 rating. Handling, storage, and assembly procedures remain identical.

Q4: Is there any change in voltage or current handling when using the substitute?
The STB11NK50ZT4 maintains a 500V drain-to-source voltage and offers a continuous drain current rating of 10A (Tc), aligning within or above the IRF840LCSPBF 8A (Tc) rating.

Q5: What should be considered regarding the input capacitance or gate charge differences?
The input capacitance and gate charge should be reviewed within the design context; both values are provided for direct comparison but must comply with the application’s allowed ranges.

Q6: Can the substitute MOSFET be used for automated reflow soldering?
Both models feature a surface mount TO-263 (D2PAK) package and MSL 1, compatible with automated reflow soldering processes.

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