IRF8313PBF Equivalent & Substitute Parts

Part Overview

The IRF8313PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring 30V drain-to-source voltage capability and 9.7A continuous drain current. This component integrates two N-channel MOSFETs in a single 8-SOIC package, featuring logic level gate operation suitable for low-voltage switching applications.

The IRF8313PBF is currently discontinued at DiGi Electronics. Identification of equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal operating range.

Substiute Parts

IRF8313PBF

Infineon TechnologiesIn Stock: 1609IRF8313PBF Datasheet

Current PartRFQ

DMN3015LSD-13

Diodes IncorporatedIn Stock: 2365DMN3015LSD-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF8313PBF are identified based on strict electrical and mechanical compatibility criteria. The substitution logic requires that alternative components maintain the following parameters within acceptable operating margins:

Critical Substitution Parameters:

1. Voltage Rating (Vdss): Substitute parts must equal or exceed 30V to ensure safe operation across the full voltage range of the original design.

2. Current Capacity (Id): Substitute parts must support continuous drain current at or above 9.7A @ 25°C to handle the same load conditions without thermal derating.

3. On-Resistance (Rds On): Substitute parts must maintain on-resistance values comparable to or lower than 15.5 mOhm to preserve switching efficiency and minimize power dissipation.

4. Package Configuration: Substitute parts must use identical 8-SOIC package geometry (0.154" width, 3.90mm) to ensure PCB footprint compatibility without layout redesign.

5. Dual N-Channel Configuration: Substitute parts must maintain the 2 N-channel array structure to preserve circuit functionality.

6. Operating Temperature Range: Substitute parts must support the full -55°C to 175°C junction temperature range to maintain reliability across environmental conditions.

The DMN3015LSD-13 from Diodes Incorporated meets these substitution criteria and is classified as a manufacturer-recommended equivalent.

Parameter Comparison

Engineering Selection Recommendations

DMN3015LSD-13 Substitution Suitability:

The DMN3015LSD-13 is suitable as a substitute for the IRF8313PBF based on the following engineering factors:

Electrical Compatibility: Both components share identical 30V Vdss ratings and dual N-channel configuration. The DMN3015LSD-13 delivers 8.4A continuous drain current, which is 13.4% lower than the IRF8313PBF's 9.7A rating. On-resistance specifications are comparable (15 mOhm vs. 15.5 mOhm), ensuring similar switching efficiency. Gate threshold voltages are within acceptable tolerance (2.5V vs. 2.35V).

Thermal Considerations: The DMN3015LSD-13 specifies a maximum power dissipation of 1.2W compared to the IRF8313PBF's 2W. The operating temperature range extends to 150°C junction temperature, which is 25°C lower than the IRF8313PBF's 175°C maximum. These thermal differences require evaluation in applications operating at elevated temperatures or with high duty cycles.

Packaging and Compliance: Both components use identical 8-SOIC package geometry, eliminating PCB redesign requirements. Both maintain ROHS3 compliance and EAR99 export classification. The DMN3015LSD-13 is currently in active production status with 2340 units in stock, ensuring supply chain continuity.

Application Constraints: The DMN3015LSD-13 is appropriate for applications where continuous drain current requirements do not exceed 8.4A and junction temperature operation remains below 150°C. Applications requiring the full 9.7A current capacity or operation above 150°C junction temperature require alternative evaluation.

Frequently Asked Questions (FAQ)

Q: Can the DMN3015LSD-13 directly replace the IRF8313PBF without circuit modification?

A: The DMN3015LSD-13 shares identical package geometry and pin configuration, enabling direct PCB footprint compatibility. However, the reduced current rating (8.4A vs. 9.7A) and lower maximum power dissipation (1.2W vs. 2W) require verification that application current demands do not exceed 8.4A continuous operation. The lower maximum junction temperature (150°C vs. 175°C) must be evaluated for thermal margin in the specific application.

Q: What are the key electrical differences between these components?

A: The primary electrical differences are continuous drain current capacity (9.7A vs. 8.4A), maximum power dissipation (2W vs. 1.2W), gate charge (90nC vs. 25.1nC), and input capacitance (760pF vs. 1415pF). On-resistance and voltage ratings are equivalent. The lower gate charge in the DMN3015LSD-13 may result in faster switching characteristics.

Q: Are both components pin-compatible?

A: Yes. Both the IRF8313PBF and DMN3015LSD-13 use the 8-SOIC package with identical pin assignments for dual N-channel MOSFET arrays. No pin remapping is required.

Q: What compliance certifications apply to both parts?

A: Both components are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export purposes. Moisture sensitivity level is 1 (unlimited) for both parts, indicating no special moisture handling requirements.

Q: How does the higher input capacitance of the DMN3015LSD-13 affect circuit performance?

A: The DMN3015LSD-13 specifies 1415pF input capacitance compared to 760pF for the IRF8313PBF. Higher input capacitance increases gate drive current requirements and may slow switching transitions. Gate driver circuits must be evaluated to ensure adequate current sourcing capability at the intended switching frequency.

Q: Is the DMN3015LSD-13 suitable for high-temperature applications?

A: The DMN3015LSD-13 operates to a maximum junction temperature of 150°C, which is 25°C lower than the IRF8313PBF's 175°C limit. Applications requiring sustained operation above 150°C junction temperature require alternative component selection or thermal management redesign.

Q: What is the inventory status of substitute parts?

A: The IRF8313PBF is discontinued at DiGi Electronics with 1513 units remaining in stock. The DMN3015LSD-13 is in active production status with 2340 units currently available, providing improved supply chain continuity for new designs and production requirements.