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IRF830S MOSFET N-Channel 500V 4.5A Equivalent & Substitute Parts
Part Overview
The IRF830S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 4.5A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for high-voltage switching applications. The IRF830S carries an Obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity. Locating compatible alternatives ensures access to functionally equivalent components with current manufacturing availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 500 | V |
| Current - Continuous Drain (Id) @ 25°C | 4.5 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5 | Ohm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38 | nC @ 10V |
| Power Dissipation (Max) | 3.1 / 74 | W (Ta) / W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-263-3, D2PAK | — |
Substitute Part Grouping Explanation
Substitution of the IRF830S is determined by electrical and mechanical parameter equivalence across the following criteria:
Electrical Parameters (Critical for Functional Compatibility):
- Drain-to-Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 4.5A @ 25°C
- On-State Resistance (Rds On): 1.5 Ohm @ 2.7A, 10V
- Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
- Gate Charge (Qg): 38 nC @ 10V
- Power Dissipation: 3.1W (Ta), 74W (Tc)
- Operating Temperature Range: -55°C to 150°C
Mechanical Parameters (Critical for Physical Compatibility):
- Mounting Type: Surface Mount
- Package: TO-263 (D2PAK)
- Pin Configuration: 2 Leads + Tab
The IRF830SPBF meets all electrical and mechanical requirements for direct substitution. The primary distinction is product status and compliance certification, with IRF830SPBF carrying Active status and RoHS3 compliance, compared to the Obsolete status of IRF830S.
Parameter Comparison
| Parameter | IRF830S | IRF830SPBF | Match |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | ✓ |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | ✓ |
| Current - Continuous Drain (Id) @ 25°C | 4.5 A (Tc) | 4.5 A (Tc) | ✓ |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.7A, 10V | 1.5 Ohm @ 2.7A, 10V | ✓ |
| Vgs(th) (Max) @ Id | 4 V @ 250µA | 4 V @ 250µA | ✓ |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10V | 38 nC @ 10V | ✓ |
| Power Dissipation (Max) | 3.1 W (Ta), 74 W (Tc) | 3.1 W (Ta), 74 W (Tc) | ✓ |
| Operating Temperature Range | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | ✓ |
| Mounting Type | Surface Mount | Surface Mount | ✓ |
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | ✓ |
| Product Status | Obsolete | Active | — |
| RoHS Status | RoHS non-compliant | RoHS3 Compliant | — |
Engineering Selection Recommendations
IRF830SPBF is the direct substitute for IRF830S based on complete electrical and mechanical parameter equivalence. Selection of IRF830SPBF provides the following advantages:
Product Status: IRF830SPBF carries Active product status, ensuring ongoing manufacturing availability and supply chain continuity. IRF830S is Obsolete, limiting future procurement options.
Compliance Certification: IRF830SPBF is RoHS3 Compliant, meeting current environmental and regulatory requirements for electronic components in regulated markets. IRF830S is RoHS non-compliant, which may restrict use in applications subject to RoHS directives.
Electrical Performance: All electrical parameters are identical between IRF830S and IRF830SPBF, including Vdss, Id, Rds On, Vgs(th), gate charge, and power dissipation ratings. No circuit redesign or thermal management modifications are required.
Mechanical Compatibility: Both devices use identical Surface Mount TO-263 (D2PAK) packaging with 2 leads plus tab configuration. PCB layout and thermal interface requirements remain unchanged.
Packaging: IRF830SPBF is supplied in Tube packaging, suitable for automated assembly processes and component handling.
Frequently Asked Questions (FAQ)
Q: Can IRF830SPBF be used as a direct replacement for IRF830S in existing designs?
A: Yes. IRF830SPBF is electrically and mechanically identical to IRF830S. All electrical parameters, including Vdss (500V), Id (4.5A), Rds On (1.5 Ohm), and operating temperature range (-55°C to 150°C), are equivalent. The TO-263 (D2PAK) package footprint and pin configuration are identical, requiring no PCB modifications.
Q: What is the primary difference between IRF830S and IRF830SPBF?
A: The primary differences are product status and compliance certification. IRF830SPBF is Active and RoHS3 Compliant, while IRF830S is Obsolete and RoHS non-compliant. Electrical and mechanical specifications are identical.
Q: Why is IRF830S listed as Obsolete?
A: Obsolete status indicates that the manufacturer has discontinued production of this part number. IRF830SPBF is the current production equivalent and should be used for new designs and ongoing procurement.
Q: Are there any thermal management differences between IRF830S and IRF830SPBF?
A: No. Both devices have identical power dissipation ratings of 3.1W (Ta) and 74W (Tc). Thermal interface design, heatsink requirements, and thermal management strategies remain unchanged.
Q: What is the significance of RoHS3 compliance for IRF830SPBF?
A: RoHS3 compliance indicates that IRF830SPBF meets current Restriction of Hazardous Substances directives, restricting the use of lead, cadmium, mercury, and other hazardous materials. This certification is required for components used in regulated markets and applications subject to environmental compliance requirements.
Q: Can IRF830SPBF be used in high-temperature applications?
A: Yes. IRF830SPBF operates across the full temperature range of -55°C to 150°C (TJ), identical to IRF830S. Electrical performance remains stable within this operating range.
Q: Is the gate charge specification identical between IRF830S and IRF830SPBF?
A: Yes. Both devices have a maximum gate charge (Qg) of 38 nC @ 10V. Gate drive circuit design and switching speed characteristics are identical.
Q: What packaging format is IRF830SPBF supplied in?
A: IRF830SPBF is supplied in Tube packaging, suitable for automated pick-and-place assembly and component handling in manufacturing environments.
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