IRF830LPBF Equivalent & Substitute Parts

Part Overview

The IRF830LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 4.5A continuous drain current. This device is packaged in TO-262-3 (I2PAK) configuration and is designed for through-hole mounting applications requiring moderate power dissipation up to 74W at case temperature. The IRF830LPBF maintains Active product status and is ROHS3 compliant.

Equivalent and substitute parts are necessary when the original IRF830LPBF is unavailable, when alternative packaging formats are required for thermal management improvements, or when design specifications allow for higher current ratings or enhanced performance characteristics within the same voltage class.

Key Parameters

Parameter	IRF830LPBF Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	4.5	A (Tc)
Rds On (Max) @ Id, Vgs	1.5	Ohm @ 2.7A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38	nC @ 10V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-262-3	Through Hole
FET Type	N-Channel Enhancement Mode	MOSFET

Substitute Part Grouping Explanation

Substitution of the IRF830LPBF is determined by the following critical parameters:

Voltage Rating Requirement: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 500V to ensure compatibility with the original circuit design and voltage stress conditions.

FET Type and Technology: All substitutes must be N-Channel enhancement-mode MOSFETs using metal oxide semiconductor technology to maintain gate drive compatibility and switching characteristics.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 150°C (TJ) to ensure reliability across all environmental conditions.

Gate Drive Voltage: All substitutes operate at 10V gate drive voltage, maintaining compatibility with existing gate driver circuits.

Mounting Type: Substitutes are available in both TO-262-3 (original package) and TO-220-3 configurations, both supporting through-hole mounting. TO-220-3 packages provide improved thermal performance through larger lead frames and enhanced heat dissipation paths.

RoHS3 Compliance: All substitute parts maintain ROHS3 compliance and operate within the same temperature and voltage specifications as the original device.

The substitute parts listed exceed the original 4.5A current rating, providing design margin and improved thermal performance while maintaining full voltage and temperature compatibility.

Parameter Comparison

Parameter	IRF830LPBF	FDP12N50NZ	IXFP12N50P	IXTP12N50P	IXTP6N50D2	STP11NK50Z	STP11NM50N	Unit
Vdss	500	500	500	500	500	500	500	V
Id @ 25°C (Tc)	4.5	11.5	12	12	6	10	8.5	A
Rds On (Max) @ Vgs 10V	1.5	0.52	0.5	0.5	0.5	0.52	0.47	Ohm
Vgs(th) (Max) @ Id	4	5	5.5	5.5	—	4.5	4	V
Gate Charge (Qg) (Max) @ 10V	38	30	29	29	96	68	19	nC
Power Dissipation (Max) Tc	74	170	200	200	300	125	70	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	TO-262-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
FET Feature	Enhancement Mode	Enhancement Mode	Enhancement Mode	Enhancement Mode	Depletion Mode	Enhancement Mode	Enhancement Mode	—
RoHS3 Status	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	—

Engineering Selection Recommendations

For Direct TO-262-3 Package Replacement: No direct equivalent is available in the TO-262-3 package format among the listed substitutes. The IRF830LPBF remains the only option for applications requiring the compact I2PAK form factor with 500V/4.5A specifications.

For TO-220-3 Package Upgrade: The STP11NM50N provides the closest electrical match to the IRF830LPBF with 8.5A continuous drain current, 470mOhm Rds On, and 70W power dissipation. This device is suitable for applications where thermal performance improvement is acceptable and the TO-220-3 package footprint is compatible. The STP11NM50N carries Obsolete product status; however, inventory of 2095 pieces is currently available.

For Enhanced Current Capacity: The STP11NK50Z (Active status, 16692 pieces in stock) provides 10A continuous drain current with 520mOhm Rds On and 125W power dissipation. This device offers improved thermal margin and is recommended for new designs or applications requiring higher current headroom.

For Maximum Thermal Performance: The IXFP12N50P and IXTP12N50P (both Active status) deliver 12A continuous drain current, 500mOhm Rds On, and 200W power dissipation. These devices are suitable for applications requiring the highest thermal performance and current capacity within the 500V voltage class.

For Depletion Mode Operation: The IXTP6N50D2 is a depletion-mode MOSFET and is not recommended as a direct substitute for the enhancement-mode IRF830LPBF due to fundamentally different gate drive requirements and operating characteristics.

Product Status Consideration: The FDP12N50NZ and STP11NM50N carry Obsolete product status. For new designs, Active-status devices (IXFP12N50P, IXTP12N50P, STP11NK50Z) are preferred to ensure long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the IRF830LPBF be replaced with a TO-220-3 package device?

A: Yes. TO-220-3 substitutes maintain the same 500V voltage rating, N-Channel enhancement-mode operation, and -55°C to 150°C temperature range. The primary differences are package geometry and thermal performance. TO-220-3 packages provide superior heat dissipation due to larger lead frames and increased copper area. PCB layout modifications are required to accommodate the different pin spacing and mounting hole pattern.

Q: What is the minimum current rating required for a substitute part?

A: The IRF830LPBF operates at 4.5A continuous drain current. Any substitute must support at least this current level at the same 500V voltage rating. All listed substitutes exceed this requirement, providing design margin and improved thermal performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance, ensuring compatibility with environmental regulations and manufacturing standards equivalent to the original IRF830LPBF.

Q: What is the significance of Rds On (on-resistance) differences?

A: Lower Rds On values reduce conduction losses and heat generation during operation. The IRF830LPBF exhibits 1.5 Ohm Rds On, while substitutes range from 0.47 to 0.52 Ohm. Lower on-resistance improves efficiency and reduces thermal stress, allowing for higher current operation or reduced heatsink requirements.

Q: Can the IXTP6N50D2 be used as a substitute?

A: No. The IXTP6N50D2 is a depletion-mode MOSFET, fundamentally different from the enhancement-mode IRF830LPBF. Depletion-mode devices conduct current with zero gate voltage and require negative gate voltage to turn off. This incompatibility makes direct substitution impossible without complete circuit redesign.

Q: Why do some substitute parts have higher gate charge (Qg) values?

A: Gate charge represents the total charge required to switch the device on or off. Higher gate charge values (such as the IXTP6N50D2 at 96 nC) require more gate driver current and longer switching times. The IRF830LPBF at 38 nC and STP11NM50N at 19 nC offer faster switching characteristics, reducing switching losses in high-frequency applications.

Q: What is the impact of package change on thermal performance?

A: The TO-262-3 package (I2PAK) provides 74W maximum power dissipation at case temperature. TO-220-3 packages offer significantly higher thermal capacity: STP11NK50Z (125W), IXFP12N50P and IXTP12N50P (200W), and IXTP6N50D2 (300W). Larger packages with increased lead frame area and copper content improve heat transfer to the PCB and external heatsinks.

Q: Are Obsolete-status parts suitable for new designs?

A: Obsolete-status parts (FDP12N50NZ and STP11NM50N) carry supply risk. While current inventory is available, future procurement may become difficult. For new designs, Active-status devices (IXFP12N50P, IXTP12N50P, STP11NK50Z) are recommended to ensure long-term component availability and supply chain continuity.

Q: What is the maximum gate voltage rating for the IRF830LPBF and substitutes?

A: The IRF830LPBF supports ±20V maximum gate voltage. Substitute parts support higher gate voltage ratings: FDP12N50NZ and STP11NM50N (±25V), IXFP12N50P and IXTP12N50P (±30V), and STP11NK50Z (±30V). These higher ratings provide additional design margin and gate driver flexibility.

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