IRF830L N-Channel MOSFET 500V 4.5A Equivalent & Substitute Parts

Part Overview

The IRF830L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 4.5A continuous drain current. The device is packaged in a Through Hole I2PAK (TO-262-3) configuration and is designed for high-voltage switching applications. The IRF830L is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The primary substitute, IRF830LPBF, maintains identical electrical specifications while offering active product status and improved compliance certifications.

Substiute Parts

IRF830L

Vishay SiliconixIn Stock: 1389IRF830L Datasheet

Current PartRFQ

IRF830LPBF

Vishay SiliconixIn Stock: 855IRF830LPBF Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF830L is determined by strict equivalence across all critical electrical and mechanical parameters. The IRF830LPBF qualifies as a direct parametric equivalent because it maintains identical specifications for drain-to-source voltage (500V), continuous drain current (4.5A), on-state resistance (1.5Ω @ 2.7A, 10V), gate threshold voltage (4V @ 250µA), gate charge (38nC @ 10V), input capacitance (610pF @ 25V), maximum gate voltage (±20V), power dissipation (3.1W Ta, 74W Tc), and operating temperature range (-55°C to 150°C). Both devices utilize N-Channel MOSFET technology and Through Hole mounting in the TO-262-3 package configuration.

The substitution is valid based on the following key parameters:

• Drain-to-Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 4.5A
• On-State Resistance (Rds On): 1.5Ω @ 2.7A, 10V
• Gate Threshold Voltage: 4V @ 250µA
• Gate Charge: 38nC @ 10V
• Input Capacitance: 610pF @ 25V
• Package Type: TO-262-3 Through Hole
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Parameter Comparison

Engineering Selection Recommendations

The IRF830LPBF is the direct equivalent substitute for the obsolete IRF830L. Selection of IRF830LPBF is supported by the following factors:

Product Status: The IRF830LPBF maintains Active product status, ensuring continued availability and manufacturer support, whereas the IRF830L is classified as Obsolete.

Compliance Certifications: The IRF830LPBF is ROHS3 Compliant, providing superior environmental and regulatory compliance compared to the IRF830L, which is RoHS non-compliant. Both devices maintain identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Electrical and Mechanical Equivalence: All critical parameters are identical between the two devices, including voltage rating, current rating, on-state resistance, gate characteristics, and thermal specifications. Both devices are packaged in the TO-262-3 Through Hole configuration with identical pin assignments and mechanical dimensions.

Moisture Sensitivity: Both devices carry MSL Level 1 (Unlimited), indicating no moisture sensitivity constraints during storage or handling.

For applications requiring the IRF830L, the IRF830LPBF provides a direct drop-in replacement with enhanced compliance and active product support.

Frequently Asked Questions (FAQ)

Q: Can the IRF830LPBF be used as a direct replacement for the IRF830L in existing designs?

A: Yes. The IRF830LPBF is a parametric equivalent with identical electrical specifications and mechanical packaging. All critical parameters—including Vdss (500V), Id (4.5A), Rds On (1.5Ω), gate characteristics, and thermal ratings—are identical. The TO-262-3 package configuration ensures mechanical compatibility with existing PCB layouts and through-hole mounting requirements.

Q: What is the primary advantage of switching from IRF830L to IRF830LPBF?

A: The IRF830LPBF offers Active product status and ROHS3 compliance, whereas the IRF830L is Obsolete and RoHS non-compliant. Active status ensures continued availability, manufacturer support, and compliance with current environmental regulations.

Q: Are there any differences in gate drive requirements between the IRF830L and IRF830LPBF?

A: No. Both devices have identical gate characteristics: Vgs(th) of 4V @ 250µA, maximum Vgs of ±20V, and gate charge of 38nC @ 10V. Gate drive circuits designed for the IRF830L require no modification for the IRF830LPBF.

Q: Do the devices have the same thermal characteristics?

A: Yes. Both the IRF830L and IRF830LPBF have identical power dissipation ratings of 3.1W (Ta) and 74W (Tc), and identical operating temperature ranges of -55°C to 150°C (TJ). Thermal management strategies remain unchanged.

Q: What is the difference in packaging between the IRF830L and IRF830LPBF?

A: Both devices use the TO-262-3 Through Hole package. The primary packaging difference is that the IRF830L is supplied in standard packaging, while the IRF830LPBF is supplied in Tube packaging. This does not affect electrical performance or mechanical compatibility.

Q: Are there any compliance or regulatory differences?

A: The IRF830LPBF is ROHS3 Compliant, while the IRF830L is RoHS non-compliant. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. For applications subject to RoHS regulations, the IRF830LPBF is the required choice.

Q: Is the IRF830LPBF available in the same quantity and lead time as the IRF830L?

A: Availability and lead times depend on current inventory levels and supplier status. The IRF830LPBF maintains Active product status, which typically ensures better long-term availability compared to the Obsolete IRF830L. Consult with your component supplier for current stock and delivery information.