IRF830A Equivalent & Substitute Parts

Part Overview

The IRF830A is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 5A continuous drain current at 25°C. The device is housed in a TO-220AB through-hole package and is designed for high-voltage switching applications. The IRF830A is classified as Active product status with RoHS non-compliant certification.

Substitute parts are necessary when the original IRF830A becomes unavailable, when RoHS compliance is required for new designs, or when alternative packaging formats are needed while maintaining electrical and mechanical compatibility within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ 3A, 10V	1.4	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	24	nC
Input Capacitance (Ciss) @ 25V	620	pF
Power Dissipation (Max)	74	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the IRF830A are classified into two categories based on electrical parameter compatibility:

Direct Equivalents (Identical Electrical Parameters): Parts that maintain all critical electrical specifications including Vdss (500V), Id (5A), Rds On (1.4 Ohm @ 3A, 10V), and Gate Charge (24 nC @ 10V). These parts differ only in packaging format or RoHS compliance status and provide pin-for-pin compatibility.

Parametric Equivalents (Voltage/Current Rating Match with Tolerance Variations): Parts that maintain the same Vdss (500V) and comparable Id ratings (4.5A to 5A) with acceptable variations in Rds On, Gate Charge, and Input Capacitance. These parts are suitable for applications where the exact electrical characteristics are not critical, provided the device remains within the thermal and electrical operating envelope.

Higher-Rated Alternatives (Voltage or Current Derating): Parts with higher Vdss ratings (550V to 650V) or significantly higher current ratings (12A to 25A) that can be used in applications where the IRF830A specifications are exceeded. These parts provide design margin but require thermal management verification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (Ohm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	RoHS Status	Product Status
IRF830A	Vishay Siliconix	500	5	1.4 @ 3A	24 @ 10V	620 @ 25V	74	TO-220-3	Non-compliant	Active
IRF830APBF	Vishay Siliconix	500	5	1.4 @ 3A	24 @ 10V	620 @ 25V	74	TO-220-3	ROHS3 Compliant	Active
IRF830APBF-BE3	Vishay Siliconix	500	5	1.4 @ 3A	24 @ 10V	620 @ 25V	74	TO-220-3	ROHS3 Compliant	Active
AOT5N50	Alpha & Omega Semiconductor Inc.	500	5	1.5 @ 2.5A	19 @ 10V	620 @ 25V	104	TO-220-3	ROHS3 Compliant	Not For New Designs
FDP5N50NZ	onsemi	500	4.5	1.5 @ 2.25A	12 @ 10V	440 @ 25V	78	TO-220-3	ROHS3 Compliant	Obsolete
IPP015N04NGXKSA1	Infineon Technologies	40	120	0.0015 @ 100A	250 @ 10V	20000 @ 20V	250	TO-220-3	ROHS3 Compliant	Active
IPP50R199CPXKSA1	Infineon Technologies	550	17	0.199 @ 9.9A	45 @ 10V	1800 @ 100V	139	TO-220-3	ROHS3 Compliant	Not For New Designs
IPP60R125CPXKSA1	Infineon Technologies	650	25	0.125 @ 16A	70 @ 10V	2500 @ 100V	208	TO-220-3	ROHS3 Compliant	Not For New Designs
IPP60R165CPXKSA1	Infineon Technologies	600	21	0.165 @ 12A	52 @ 10V	2000 @ 100V	192	TO-220-3	ROHS3 Compliant	Not For New Designs
IPP60R199CPXKSA1	Infineon Technologies	650	16	0.199 @ 9.9A	43 @ 10V	1520 @ 100V	139	TO-220-3	ROHS3 Compliant	Not For New Designs
IPP60R250CPXKSA1	Infineon Technologies	650	12	0.250 @ 7.8A	35 @ 10V	1200 @ 100V	104	TO-220-3	ROHS3 Compliant	Obsolete

Engineering Selection Recommendations

For Direct Replacement with RoHS Compliance: IRF830APBF and IRF830APBF-BE3 are direct electrical equivalents to the IRF830A with identical Vdss, Id, Rds On, and Gate Charge specifications. Both parts are ROHS3 compliant and maintain Active product status. IRF830APBF is recommended for new designs requiring RoHS compliance. IRF830APBF-BE3 provides an alternative source with equivalent electrical performance.

For 500V Applications with Parametric Tolerance: AOT5N50 (Alpha & Omega Semiconductor) maintains 500V Vdss and 5A Id ratings with acceptable variations in Rds On (1.5 Ohm vs. 1.4 Ohm) and Gate Charge (19 nC vs. 24 nC). This part is ROHS3 compliant but classified as Not For New Designs. FDP5N50NZ (onsemi) provides 500V operation at 4.5A with lower Gate Charge (12 nC) and Input Capacitance (440 pF), suitable for applications prioritizing switching speed. FDP5N50NZ is classified as Obsolete.

For Higher Voltage Margin Applications: IPP50R199CPXKSA1, IPP60R165CPXKSA1, IPP60R199CPXKSA1, and IPP60R250CPXKSA1 (Infineon Technologies CoolMOS series) provide voltage ratings from 550V to 650V with current ratings from 12A to 25A. These parts are ROHS3 compliant and suitable for applications requiring design margin above 500V or higher current capacity. All are classified as Not For New Designs or Obsolete.

For Low-Voltage High-Current Applications: IPP015N04NGXKSA1 (Infineon OptiMOS series) operates at 40V with 120A continuous current, suitable only for applications with significantly different voltage and current requirements than the IRF830A.

Frequently Asked Questions (FAQ)

Q: Can IRF830APBF be used as a direct replacement for IRF830A? A: Yes. IRF830APBF is electrically identical to IRF830A with matching Vdss (500V), Id (5A), Rds On (1.4 Ohm @ 3A, 10V), and Gate Charge (24 nC @ 10V). The primary difference is RoHS3 compliance. Both parts use TO-220-3 packaging and are pin-compatible.

Q: What is the difference between IRF830APBF and IRF830APBF-BE3? A: Both parts are electrically identical with identical electrical specifications. IRF830APBF-BE3 includes a specific manufacturing code designation. Selection between these parts depends on supplier availability and internal traceability requirements.

Q: Can AOT5N50 replace IRF830A in all applications? A: AOT5N50 maintains 500V Vdss and 5A Id ratings with acceptable parametric variations. Rds On is slightly higher (1.5 Ohm vs. 1.4 Ohm) and Gate Charge is lower (19 nC vs. 24 nC). Thermal performance differs (104W vs. 74W). Verification of thermal management and switching characteristics is required for specific applications.

Q: Why are some substitute parts classified as "Not For New Designs" or "Obsolete"? A: These classifications indicate that manufacturers have discontinued active support or recommend alternative parts for new product development. While these parts may remain functionally suitable for existing applications, they should not be selected for new designs due to potential supply discontinuation.

Q: Are all substitute parts ROHS3 compliant? A: No. IRF830A is RoHS non-compliant. IRF830APBF, IRF830APBF-BE3, and all Infineon and Alpha & Omega parts listed are ROHS3 compliant. FDP5N50NZ is ROHS3 compliant. Selection of RoHS-compliant parts is necessary for applications subject to RoHS regulations.

Q: Can higher-voltage rated parts like IPP60R125CPXKSA1 (650V) be used instead of IRF830A (500V)? A: Higher-voltage rated parts can be used in 500V applications as they provide voltage margin. However, these parts have significantly different electrical characteristics including higher Gate Charge, Input Capacitance, and current ratings. Circuit design verification is required to ensure compatibility with gate drive circuits and thermal management.

Q: What is the significance of Gate Charge (Qg) differences between substitute parts? A: Gate Charge affects switching speed and gate drive circuit requirements. Lower Gate Charge (e.g., FDP5N50NZ at 12 nC) enables faster switching with lower gate drive power. Higher Gate Charge (e.g., IPP60R125CPXKSA1 at 70 nC) requires higher gate drive current. Gate drive circuit compatibility must be verified when substituting parts with significantly different Qg values.

Q: What packaging options are available for IRF830A substitutes? A: All listed substitute parts use TO-220-3 through-hole packaging, maintaining mechanical compatibility with IRF830A. Packaging format is consistent across all alternatives, allowing direct board-level substitution without layout modifications.

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