IRF830 N-Channel 500V 4.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF830 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by STMicroelectronics, rated for 500V drain-to-source voltage and 4.5A continuous drain current in a TO-220AB through-hole package. The device is classified as obsolete, indicating it is no longer in active production. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and legacy system requirements where the original IRF830 is unavailable or inventory is depleted.

Substiute Parts

IRF830
STMicroelectronicsIn Stock: 15479IRF830 Datasheet
IRF830
Current Part
AOT5N50
Alpha & Omega Semiconductor Inc.In Stock: 14140AOT5N50 Datasheet
AOT5N50
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FDP5N50NZ
onsemiIn Stock: 15200FDP5N50NZ Datasheet
FDP5N50NZ
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IRF830A
Vishay SiliconixIn Stock: 2365IRF830A Datasheet
IRF830A
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IRF830APBF
Vishay SiliconixIn Stock: 1458IRF830APBF Datasheet
IRF830APBF
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IRF830LPBF
Vishay SiliconixIn Stock: 855IRF830LPBF Datasheet
IRF830LPBF
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IRF830PBF
Vishay SiliconixIn Stock: 25337IRF830PBF Datasheet
IRF830PBF
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 4.5 A (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10V
Power Dissipation (Max) 100 W (Tc)
Operating Temperature (TJ) 150 °C
Package / Case TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IRF830 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): 500V minimum
  • Continuous Drain Current (Id): 4.5A or greater at 25°C
  • On-State Resistance (Rds On): 1.5 Ohm or lower at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): Compatible with 4V nominal
  • Package Type: TO-220 series (TO-220-3, TO-220AB) for through-hole mounting
  • FET Technology: N-Channel Metal Oxide Semiconductor

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (TO-220AB Package): Parts that maintain identical or superior electrical performance within the same TO-220AB package footprint, enabling direct board-level replacement without layout modification.

Category B - Functional Equivalents (Alternative TO-220 Packages): Parts that meet all electrical specifications but utilize alternative TO-220 package variants (TO-220-3, TO-262-3), requiring mechanical accommodation or board redesign.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (Ohm) Vgs(th) (V) Qg (nC) Power Diss. (W) Package Product Status
IRF830 STMicroelectronics 500 4.5 1.5 @ 2.7A, 10V 4 @ 250µA 30 @ 10V 100 (Tc) TO-220-3 Obsolete
IRF830PBF Vishay Siliconix 500 4.5 1.5 @ 2.7A, 10V 4 @ 250µA 38 @ 10V 74 (Tc) TO-220AB Active
IRF830APBF Vishay Siliconix 500 5 1.4 @ 3A, 10V 4.5 @ 250µA 24 @ 10V 74 (Tc) TO-220AB Active
IRF830A Vishay Siliconix 500 5 1.4 @ 3A, 10V 4.5 @ 250µA 24 @ 10V 74 (Tc) TO-220AB Active
IRF830LPBF Vishay Siliconix 500 4.5 1.5 @ 2.7A, 10V 4 @ 250µA 38 @ 10V 74 (Tc) TO-262-3 Active
FDP5N50NZ onsemi 500 4.5 1.5 @ 2.25A, 10V 5 @ 250µA 12 @ 10V 78 (Tc) TO-220-3 Obsolete
AOT5N50 Alpha & Omega Semiconductor Inc. 500 5 1.5 @ 2.5A, 10V 4.5 @ 250µA 19 @ 10V 104 (Tc) TO-220 Not For New Designs

Engineering Selection Recommendations

Primary Recommendation - Category A (Direct Replacement):

IRF830PBF (Vishay Siliconix) is the preferred substitute for the obsolete IRF830. This part maintains identical electrical specifications (500V, 4.5A, 1.5 Ohm Rds On) and is packaged in TO-220AB, enabling direct board-level substitution without layout modification. IRF830PBF holds Active product status and is RoHS3 compliant, supporting long-term supply chain continuity. Inventory availability is substantial (25,300 units in stock).

Secondary Recommendation - Category A (Enhanced Performance):

IRF830APBF and IRF830A (Vishay Siliconix) provide superior electrical performance with increased drain current (5A versus 4.5A), lower on-state resistance (1.4 Ohm versus 1.5 Ohm), and reduced gate charge (24 nC versus 30 nC). Both are Active products with RoHS3 compliance. IRF830APBF is supplied in tube packaging; IRF830A packaging is unspecified. These parts are electrically compatible with the IRF830 and support higher current applications within the same voltage class.

Alternative Recommendation - Category B (Package Variant):

IRF830LPBF (Vishay Siliconix) matches the IRF830 electrical specification exactly but is packaged in TO-262-3 (I2PAK) instead of TO-220AB. This part is suitable only when board layout accommodates the TO-262-3 footprint. IRF830LPBF is Active and RoHS3 compliant.

Functional Equivalent - Alternate Manufacturer:

FDP5N50NZ (onsemi) meets the core electrical requirements (500V, 4.5A, 1.5 Ohm Rds On) in TO-220-3 packaging. This part is classified as Obsolete and is RoHS3 compliant. Substitution is viable for applications where manufacturer diversity is acceptable.

Not Recommended for New Designs:

AOT5N50 (Alpha & Omega Semiconductor Inc.) is classified as "Not For New Designs" and should not be selected for new applications or long-term production requirements, despite meeting electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can IRF830PBF be used as a direct replacement for IRF830?

A: Yes. IRF830PBF is electrically equivalent to IRF830 across all critical parameters (500V, 4.5A, 1.5 Ohm Rds On) and uses the same TO-220AB package. Direct board-level substitution is supported without layout modification.

Q: What is the difference between IRF830A and IRF830APBF?

A: IRF830A and IRF830APBF are electrically identical. The difference is packaging: IRF830APBF is supplied in tube packaging, while IRF830A packaging is unspecified. Both are Active products with identical electrical performance (5A, 1.4 Ohm Rds On).

Q: Can I use IRF830LPBF instead of IRF830?

A: IRF830LPBF is electrically equivalent to IRF830 but uses TO-262-3 (I2PAK) packaging instead of TO-220AB. Substitution requires board redesign to accommodate the different footprint. IRF830LPBF is suitable only when the application board layout supports TO-262-3 mounting.

Q: Is FDP5N50NZ a suitable substitute?

A: FDP5N50NZ meets the electrical specifications (500V, 4.5A, 1.5 Ohm Rds On) and is packaged in TO-220-3. However, it is classified as Obsolete. Substitution is technically viable but may present long-term supply chain risk.

Q: Why is AOT5N50 not recommended?

A: AOT5N50 is classified as "Not For New Designs" by the manufacturer. While it meets electrical specifications, this status indicates the manufacturer does not support new applications. Use is restricted to legacy system maintenance only.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Drain-to-Source Voltage (Vdss) of 500V or greater, (2) Continuous Drain Current (Id) of 4.5A or greater, (3) On-State Resistance (Rds On) of 1.5 Ohm or lower, (4) Gate Threshold Voltage (Vgs(th)) compatible with 4V nominal, and (5) TO-220 series package type for through-hole mounting.

Q: Does RoHS compliance affect substitution decisions?

A: RoHS compliance is a regulatory and supply chain consideration. IRF830PBF, IRF830APBF, IRF830A, and IRF830LPBF are all RoHS3 compliant, supporting modern manufacturing and environmental requirements. The original IRF830 is RoHS non-compliant. Compliance status should be verified against application requirements.

Q: Can I use a higher-current part like IRF830A (5A) in place of IRF830 (4.5A)?

A: Yes. IRF830A provides higher current capability (5A versus 4.5A) and lower on-state resistance (1.4 Ohm versus 1.5 Ohm), making it electrically superior for the same voltage class. This substitution is valid for applications where the original 4.5A specification is a minimum requirement.

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