IRF830 N-Channel MOSFET 500V 4.5A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF830 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 500V drain-to-source voltage with 4.5A continuous drain current in a Through Hole TO-220AB package. The device is classified as Obsolete, which necessitates identification of equivalent and substitute components for ongoing production and maintenance applications. Direct parametric equivalents and manufacturer-recommended alternatives are available from active product lines, enabling seamless integration into existing designs while maintaining electrical performance specifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	4.5	A (Tc)
Rds On (Max) @ Id, Vgs	1.5	Ohm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs	38	nC @ 10V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IRF830 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V minimum
Current - Continuous Drain (Id) @ 25°C: 4.5A minimum
Rds On (Max) @ Id, Vgs: 1.5 Ohm or lower
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole
Package / Case: TO-220-3 compatible

Substitute Categories:

Direct Manufacturer Equivalents maintain identical electrical specifications and are sourced from the same manufacturer (Vishay Siliconix). These parts are pin-compatible and functionally interchangeable with no circuit modifications required.

Parametric Equivalents meet or exceed all critical electrical parameters while originating from the same manufacturer. These parts are functionally equivalent and suitable for direct substitution.

Manufacturer-Recommended Alternatives are sourced from different manufacturers (onsemi, STMicroelectronics) and meet the core electrical requirements. These parts may exhibit minor variations in secondary parameters such as gate charge or input capacitance but remain functionally compatible within the specified operating envelope.

Parameter Comparison

Parameter	IRF830	IRF830PBF	IRF830PBF-BE3	FDP5N50NZ	STP5NK52ZD
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	onsemi	STMicroelectronics
Product Status	Obsolete	Active	Active	Obsolete	Not For New Designs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	500	500	500	500	520
Id @ 25°C (A)	4.5	4.5	4.5	4.5	4.4
Rds On (Max) @ Id, Vgs (Ohm)	1.5 @ 2.7A, 10V	1.5 @ 2.7A, 10V	1.5 @ 2.7A, 10V	1.5 @ 2.25A, 10V	1.5 @ 2.2A, 10V
Vgs(th) (Max) @ Id (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA	4.5 @ 50µA
Gate Charge (Qg) (Max) @ Vgs (nC)	38 @ 10V	38 @ 10V	38 @ 10V	12 @ 10V	16.9 @ 10V
Vgs (Max) (V)	±20	±20	±20	±25	±30
Input Capacitance (Ciss) (Max) @ Vds (pF)	610 @ 25V	610 @ 25V	610 @ 25V	440 @ 25V	529 @ 25V
Power Dissipation (Max) (W)	74	74	74	78	25
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Preferred):

IRF830PBF and IRF830PBF-BE3 are the primary substitutes for the obsolete IRF830. Both parts are manufactured by Vishay Siliconix and maintain identical electrical specifications across all critical parameters. IRF830PBF is classified as Active product status with ROHS3 compliance and REACH Affected designation. IRF830PBF-BE3 is also Active with ROHS3 compliance. Both parts are available in Tube packaging and are suitable for direct pin-for-pin substitution without circuit modification.

For Alternative Sourcing:

FDP5N50NZ (onsemi, UniFET-II™ series) and STP5NK52ZD (STMicroelectronics, SuperMESH™ series) are manufacturer-recommended alternatives that meet the core electrical requirements. FDP5N50NZ is classified as Obsolete but provides equivalent performance with slightly lower gate charge (12 nC vs. 38 nC) and input capacitance (440 pF vs. 610 pF), resulting in faster switching characteristics. STP5NK52ZD is classified as Not For New Designs and features a marginally higher Vdss rating (520V vs. 500V) with reduced power dissipation rating (25W vs. 74W). Both alternatives maintain TO-220-3 package compatibility and identical operating temperature range.

Compliance Considerations:

The IRF830 is RoHS non-compliant. For applications requiring RoHS3 compliance, IRF830PBF or IRF830PBF-BE3 are mandatory selections. Both alternatives satisfy ROHS3 requirements. FDP5N50NZ and STP5NK52ZD also provide ROHS3 compliance for regulated applications.

Frequently Asked Questions (FAQ)

Q: Can IRF830PBF be used as a direct replacement for IRF830?

A: Yes. IRF830PBF is a direct equivalent manufactured by Vishay Siliconix with identical electrical specifications, gate charge, input capacitance, and power dissipation ratings. The part is pin-compatible in TO-220-3 package configuration and requires no circuit modifications.

Q: What is the difference between IRF830PBF and IRF830PBF-BE3?

A: Both parts are parametrically identical with respect to all critical electrical specifications including Vdss, Id, Rds On, gate charge, and power dissipation. The primary difference is product status designation and REACH compliance classification. IRF830PBF-BE3 is designated as Vendor Undefined for REACH status, while IRF830PBF is REACH Affected. Both are ROHS3 compliant and suitable for direct substitution.

Q: Are FDP5N50NZ and STP5NK52ZD suitable for direct substitution?

A: FDP5N50NZ and STP5NK52ZD meet the core electrical requirements for Vdss, Id, and Rds On specifications. However, both parts exhibit reduced gate charge and input capacitance compared to the IRF830, resulting in faster switching response. These parts are functionally compatible but originate from different manufacturers. Circuit validation is not required for parameter compliance, but design teams should confirm compatibility with existing gate drive circuitry and thermal management provisions.

Q: What is the impact of lower gate charge in alternative parts?

A: Lower gate charge (FDP5N50NZ: 12 nC, STP5NK52ZD: 16.9 nC vs. IRF830: 38 nC) indicates faster switching transitions. This characteristic reduces switching losses and improves efficiency in high-frequency applications. Gate drive circuitry designed for the IRF830 will operate correctly with lower gate charge alternatives, as the drive circuit will simply charge the gate capacitance more rapidly.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed (IRF830PBF, IRF830PBF-BE3, FDP5N50NZ, STP5NK52ZD) are available in TO-220-3 package configuration, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heatsink assemblies.

Q: Which substitute part should be selected for new designs?

A: IRF830PBF is the recommended selection for new designs. The part is classified as Active product status, provides ROHS3 compliance, and maintains complete electrical equivalence to the original IRF830 specification. This selection ensures long-term availability and regulatory compliance for production applications.

Q: What is the significance of product status classifications?

A: Product Status indicates manufacturer support and availability timeline. Active status (IRF830PBF, IRF830PBF-BE3) indicates ongoing production and long-term availability. Obsolete status (IRF830, FDP5N50NZ) indicates discontinued production with limited remaining inventory. Not For New Designs status (STP5NK52ZD) indicates the manufacturer does not recommend the part for new applications but may continue limited production for legacy support.

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