IRF8252PBF Equivalent & Substitute Parts

Part Overview

The IRF8252PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 25A continuous drain current at 25°C. This device is part of the HEXFET® series and is housed in an 8-SO surface mount package. The IRF8252PBF is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5305 pF @ 13 V
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the IRF8252PBF is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature Range: -55°C ~ 150°C (TJ)

Secondary Compatibility Parameters:

Drain to Source Voltage (Vdss): Equal to or greater than 25V
Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 25A
Rds On (Max): Equal to or lower than 2.7mOhm @ specified conditions
Gate Charge (Qg): Comparable performance characteristics
Vgs(th) and Input Capacitance: Within acceptable operating ranges

Substitute parts must maintain electrical compatibility within the application's voltage and current requirements while preserving the same physical footprint and thermal characteristics.

Parameter Comparison

Parameter	IRF8252PBF (Main)	IRF8788TRPBF (Substitute)	BSO033N03MSGXUMA1 (Substitute)
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)	24A (Ta)	17A (Ta)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 25A, 10V	2.8mOhm @ 24A, 10V	3.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100µA	2.35V @ 100µA	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 4.5 V	66 nC @ 4.5 V	124 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	5305 pF @ 13 V	5720 pF @ 15 V	9600 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)	1.56W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)
Product Status	Obsolete	Active	Not For New Designs
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF8788TRPBF is the primary substitute for the IRF8252PBF. This device maintains active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The IRF8788TRPBF provides equivalent continuous drain current (24A versus 25A), comparable on-resistance (2.8mOhm versus 2.7mOhm), and identical gate threshold voltage characteristics. The higher Vdss rating (30V versus 25V) provides additional voltage margin without compromising performance. Moisture sensitivity level remains at MSL 1, matching the original component's handling requirements. The identical 8-SOIC package footprint enables direct PCB replacement.

BSO033N03MSGXUMA1 serves as an alternative substitute when higher voltage rating is prioritized. This OptiMOS™ series device offers 30V Vdss rating and ROHS3 compliance. However, the continuous drain current is reduced to 17A, and the on-resistance increases to 3.3mOhm. The gate charge is significantly higher at 124 nC, and input capacitance increases to 9600 pF, which may affect switching characteristics in high-frequency applications. Moisture sensitivity level is MSL 3, requiring stricter handling protocols. This substitute is classified as Not For New Designs, limiting its suitability for new development efforts.

For applications requiring direct replacement with minimal circuit redesign, IRF8788TRPBF is the recommended selection. For applications where higher voltage headroom is essential and reduced current capacity is acceptable, BSO033N03MSGXUMA1 provides an alternative path.

Frequently Asked Questions (FAQ)

Q: Can IRF8788TRPBF directly replace IRF8252PBF without circuit modifications?

A: Yes. Both devices share identical gate threshold voltage (2.35V @ 100µA), identical maximum gate voltage (±20V), and the same 8-SOIC package footprint. The IRF8788TRPBF's higher Vdss rating (30V versus 25V) and comparable on-resistance (2.8mOhm versus 2.7mOhm) make it a direct functional replacement. No circuit modifications are required.

Q: What are the key differences between IRF8788TRPBF and BSO033N03MSGXUMA1?

A: IRF8788TRPBF maintains higher continuous drain current (24A versus 17A) and lower on-resistance (2.8mOhm versus 3.3mOhm), making it suitable for higher current applications. IRF8788TRPBF has lower gate charge (66 nC versus 124 nC) and lower input capacitance (5720 pF versus 9600 pF), resulting in faster switching characteristics. IRF8788TRPBF carries active product status, while BSO033N03MSGXUMA1 is not recommended for new designs. Both share identical operating temperature range and package dimensions.

Q: Does moisture sensitivity level affect component selection?

A: Moisture sensitivity level impacts handling, storage, and reflow procedures. IRF8252PBF and IRF8788TRPBF both carry MSL 1 (Unlimited), requiring standard moisture control. BSO033N03MSGXUMA1 carries MSL 3 (168 Hours), requiring stricter bake-out procedures and shorter exposure windows. If existing supply chain and manufacturing processes are optimized for MSL 1 components, IRF8788TRPBF maintains compatibility without procedural changes.

Q: Are there applications where BSO033N03MSGXUMA1 is preferable to IRF8788TRPBF?

A: BSO033N03MSGXUMA1 is preferable in applications where the 30V Vdss rating provides significant voltage margin and where the reduced current capacity (17A) is sufficient. The higher gate charge and input capacitance may be acceptable in low-frequency switching applications where switching speed is not critical. However, the Not For New Designs status limits its use to legacy system maintenance.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge affects switching speed and driver requirements. IRF8788TRPBF has 66 nC gate charge versus 53 nC for IRF8252PBF, requiring slightly more driver current or longer switching times. BSO033N03MSGXUMA1 has 124 nC gate charge, approximately double the original, which may require driver circuit adjustments in high-frequency applications. For standard switching frequencies below 100 kHz, this difference is typically negligible.

Q: Can these substitutes be used in parallel configurations?

A: Parallel operation requires matched on-resistance characteristics. IRF8788TRPBF (2.8mOhm) is closely matched to IRF8252PBF (2.7mOhm) and can be paralleled with the original device. BSO033N03MSGXUMA1 (3.3mOhm) exhibits higher on-resistance and should not be paralleled with either device without careful thermal analysis and current-sharing verification.

Q: What compliance certifications are relevant for substitute selection?

A: Both IRF8788TRPBF and BSO033N03MSGXUMA1 carry ROHS3 compliance and REACH Unaffected status, matching the regulatory requirements of the original IRF8252PBF. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095. These certifications ensure compatibility with current environmental and export regulations.

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