IRF820STRLPBF Equivalent & Substitute Parts

Part Overview

The IRF820STRLPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 2.5A continuous drain current. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring high-voltage switching and power management. The part maintains Active product status and is ROHS3 compliant.

Substitute parts are identified when electrical characteristics, mechanical packaging, and thermal specifications remain within the defined operational parameters of the original component, ensuring direct functional equivalence in circuit applications.

Substiute Parts

IRF820STRLPBF
Vishay SiliconixIn Stock: 2590IRF820STRLPBF Datasheet
IRF820STRLPBF
Current Part
IRF820STRRPBF
Vishay SiliconixIn Stock: 2577IRF820STRRPBF Datasheet
IRF820STRRPBF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 2.5 A (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 1.5A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25V
Power Dissipation (Max) 3.1 / 50 W (Ta) / W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-263 (D2PAK) Surface Mount
FET Type N-Channel MOSFET

Substitute Part Grouping Explanation

Substitute parts for the IRF820STRLPBF are identified based on strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id) @ 25°C: 2.5A (Tc)
  • On-State Resistance Rds On (Max): 3 Ohm @ 1.5A, 10V
  • Gate Threshold Voltage Vgs(th) (Max): 4V @ 250µA
  • Gate Charge (Qg) (Max): 24 nC @ 10V
  • Input Capacitance (Ciss) (Max): 360 pF @ 25V
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical & Packaging Equivalence Criteria:

  • Package Type: TO-263 (D2PAK), Surface Mount
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)

Compliance & Status Criteria:

  • Product Status: Active
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must match all electrical parameters, maintain identical package specifications, and retain Active product status with equivalent compliance certifications.

Parameter Comparison

Parameter IRF820STRLPBF IRF820STRRPBF Match
Manufacturer Vishay Siliconix Vishay Siliconix Yes
FET Type N-Channel N-Channel Yes
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Yes
Drain to Source Voltage (Vdss) 500 V 500 V Yes
Continuous Drain Current (Id) @ 25°C 2.5A (Tc) 2.5A (Tc) Yes
Rds On (Max) @ Id, Vgs 3 Ohm @ 1.5A, 10V 3 Ohm @ 1.5A, 10V Yes
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA Yes
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10V 24 nC @ 10V Yes
Vgs (Max) ±20V ±20V Yes
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25V 360 pF @ 25V Yes
Power Dissipation (Max) 3.1W (Ta), 50W (Tc) 3.1W (Ta), 50W (Tc) Yes
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Yes
Mounting Type Surface Mount Surface Mount Yes
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK Yes
Supplier Device Package TO-263 (D2PAK) TO-263 (D2PAK) Yes
Base Product Number IRF820 IRF820 Yes
Product Status Active Active Yes
RoHS Status ROHS3 Compliant ROHS3 Compliant Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Yes

Engineering Selection Recommendations

The IRF820STRRPBF is a direct parametric equivalent to the IRF820STRLPBF. Both devices are manufactured by Vishay Siliconix and share identical electrical specifications, thermal characteristics, and mechanical packaging. Both parts maintain Active product status and are ROHS3 compliant with MSL rating of 1 (Unlimited).

Selection between these parts is based on availability and supply chain requirements, as all functional and compliance parameters are equivalent. Both devices are suitable for direct substitution in applications requiring 500V N-Channel MOSFET switching with 2.5A continuous drain current in TO-263 (D2PAK) Surface Mount packages.

Frequently Asked Questions (FAQ)

Q: Can IRF820STRRPBF replace IRF820STRLPBF in existing designs?

A: Yes. The IRF820STRRPBF is a direct parametric equivalent with identical electrical specifications, on-state resistance, gate charge, and thermal ratings. Both devices are housed in the same TO-263 (D2PAK) Surface Mount package with identical pin configurations.

Q: Are there differences in packaging between these parts?

A: No. Both the IRF820STRLPBF and IRF820STRRPBF use identical TO-263 (D2PAK) Surface Mount packaging with the same lead configuration and thermal characteristics.

Q: What is the significance of the different suffix codes (STRLPBF vs. STRRPBF)?

A: The suffix codes indicate different tape and reel configurations or manufacturing lot designations from Vishay Siliconix. The electrical and mechanical specifications remain identical across both part numbers.

Q: Are both parts RoHS compliant?

A: Yes. Both IRF820STRLPBF and IRF820STRRPBF are ROHS3 compliant with MSL rating of 1 (Unlimited), meeting environmental and regulatory requirements.

Q: What is the operating temperature range for these devices?

A: Both devices operate across a junction temperature range of -55°C to 150°C (TJ), suitable for industrial and commercial applications.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Yes. Both devices have identical gate charge (24 nC @ 10V) and input capacitance (360 pF @ 25V) specifications, making them suitable for equivalent performance in high-frequency switching circuits.

Q: What is the maximum drain current rating?

A: Both devices are rated for 2.5A continuous drain current at 25°C (Tc), with maximum on-state resistance of 3 Ohm at 1.5A and 10V gate-source voltage.

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