IRF820S MOSFET N-Channel 500V 2.5A Equivalent & Substitute Parts

Part Overview

The IRF820S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 2.5A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for high-voltage switching applications. The IRF820S carries an obsolete product status, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Active alternatives with identical electrical and mechanical specifications are available to ensure uninterrupted component availability.

Substiute Parts

IRF820S

Vishay SiliconixIn Stock: 1259IRF820S Datasheet

Current PartRFQ

IRF820SPBF

Vishay SiliconixIn Stock: 2179IRF820SPBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF820S is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Must Match):

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id) @ 25°C: 2.5A (Tc)
• On-State Drain Resistance (Rds On Max): 3Ω @ 1.5A, 10V
• Gate Threshold Voltage (Vgs(th) Max): 4V @ 250µA
• Gate Charge (Qg Max): 24 nC @ 10V
• Input Capacitance (Ciss Max): 360 pF @ 25V
• Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match):

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Surface Mount
• Package Type: TO-263 (D2PAK)

The IRF820SPBF meets all specified electrical and mechanical parameters and is classified as a direct substitute for the obsolete IRF820S.

Parameter Comparison

Engineering Selection Recommendations

The IRF820SPBF is the direct substitute for the obsolete IRF820S. Both devices are manufactured by Vishay Siliconix and share identical electrical and mechanical specifications across all critical parameters. The IRF820SPBF carries an active product status, ensuring long-term availability and supply chain continuity.

Compliance Consideration: The IRF820SPBF is ROHS3 compliant, whereas the IRF820S is RoHS non-compliant. For applications subject to RoHS regulations or environmental compliance requirements, the IRF820SPBF is the appropriate selection. Both devices maintain REACH Unaffected status and carry the same ECCN and HTSUS classifications.

Inventory and Packaging: The IRF820SPBF is supplied in Tube packaging with 2100 pieces currently in stock, compared to 1200 pieces of the obsolete IRF820S. The active product status of the IRF820SPBF ensures continued availability for production and replacement applications.

Frequently Asked Questions (FAQ)

Q: Can the IRF820SPBF be used as a direct replacement for the IRF820S?

A: Yes. The IRF820SPBF is a direct substitute for the IRF820S. All electrical parameters, including Vdss, Id, Rds On, Vgs(th), gate charge, input capacitance, and power dissipation, are identical. The mechanical specifications, including package type (TO-263 D2PAK) and mounting configuration (Surface Mount), are also identical. Pin-for-pin compatibility is confirmed.

Q: What is the primary difference between the IRF820S and IRF820SPBF?

A: The primary differences are product status and regulatory compliance. The IRF820S is obsolete and RoHS non-compliant, while the IRF820SPBF is an active product with ROHS3 compliance. Both devices are manufactured by Vishay Siliconix and share identical electrical and mechanical specifications.

Q: Are there any thermal or electrical performance differences between these devices?

A: No. Both devices have identical power dissipation ratings (3.1W at Ta, 50W at Tc) and operating temperature ranges (-55°C to 150°C TJ). Thermal performance and electrical characteristics are equivalent.

Q: Is the TO-263 (D2PAK) package identical for both parts?

A: Yes. Both the IRF820S and IRF820SPBF use the TO-263-3 D2PAK package with 2 leads plus tab. The package footprint, pin configuration, and mounting requirements are identical.

Q: What is the gate charge specification, and does it differ between these parts?

A: The gate charge (Qg Max) is 24 nC at 10V for both devices. This parameter is identical and affects switching speed and gate drive requirements equally for both parts.

Q: Can these devices be used interchangeably in existing PCB designs?

A: Yes. The IRF820SPBF can be used as a direct replacement in any PCB design originally specified for the IRF820S. No circuit modifications, layout changes, or gate drive adjustments are required.

Q: What is the input capacitance, and is it the same for both devices?

A: The input capacitance (Ciss Max) is 360 pF at 25V for both devices. This parameter is identical and affects gate drive circuit design equally.

Q: Are there any supply chain advantages to selecting the IRF820SPBF?

A: Yes. The IRF820SPBF carries an active product status with 2100 pieces in stock, compared to 1200 pieces of the obsolete IRF820S. The active status ensures continued availability and long-term supply chain reliability.