IRF820LPBF Equivalent & Substitute Parts

Part Overview

The IRF820LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with a continuous drain current of 2.5A at 25°C. This device is packaged in a Through Hole I2PAK (TO-262-3) configuration and is currently in Active product status with 660 pieces available in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining functional compatibility in the target application. The IRF820LPBF has one manufacturer-recommended substitute: the STP3NK50Z from STMicroelectronics. However, the STP3NK50Z is designated as Not For New Designs, which affects its suitability for new development projects.

Substiute Parts

IRF820LPBF

Vishay SiliconixIn Stock: 723IRF820LPBF Datasheet

Current PartRFQ

STP3NK50Z

STMicroelectronicsIn Stock: 10083STP3NK50Z Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF820LPBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 2.5A at 25°C
• Rds On (Max): Must not exceed 3Ohm at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Must be within acceptable switching range
• Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package Type: Must be compatible with I2PAK footprint or equivalent through-hole configuration

The STP3NK50Z meets the core voltage rating (500V) and operating temperature range (-55°C to 150°C). However, it exhibits differences in continuous drain current (2.3A versus 2.5A), Rds On characteristics (3.3Ohm versus 3Ohm), and package configuration (TO-220 versus I2PAK). These differences require evaluation against specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

For Active Development Projects: The IRF820LPBF is the preferred selection due to its Active product status. This designation ensures continued manufacturer support, availability, and compliance with current industry standards. The device is ROHS3 compliant and carries an MSL rating of 1 (Unlimited), indicating no moisture sensitivity constraints.

For Legacy System Maintenance or Replacement: The STP3NK50Z may be considered as a substitute in applications where the following conditions are met:

• The application can tolerate a continuous drain current rating of 2.3A (versus 2.5A)
• The application can accommodate a package change from I2PAK to TO-220
• The application can accept the higher Rds On value of 3.3Ohm (versus 3Ohm)

The STP3NK50Z carries a "Not For New Designs" designation, which restricts its use to maintenance, repair, or replacement scenarios only. This status indicates that STMicroelectronics does not recommend this part for new product development.

Compliance Considerations: Both devices are ROHS3 compliant and carry identical MSL ratings. Both operate across the full temperature range of -55°C to 150°C (TJ). Selection between these parts should be based on product lifecycle requirements and application-specific current and thermal constraints.

Frequently Asked Questions (FAQ)

Q: Can the STP3NK50Z be used as a direct replacement for the IRF820LPBF in new designs?

A: No. The STP3NK50Z is designated as "Not For New Designs" by the manufacturer. New product development should utilize the IRF820LPBF or identify alternative active-status N-Channel 500V MOSFETs that meet the application requirements.

Q: What are the key electrical differences between these two parts?

A: The primary differences are: (1) Continuous drain current: IRF820LPBF is rated at 2.5A versus STP3NK50Z at 2.3A; (2) Rds On: IRF820LPBF is 3Ohm versus STP3NK50Z at 3.3Ohm; (3) Gate charge: IRF820LPBF is 24nC versus STP3NK50Z at 15nC; (4) Power dissipation: IRF820LPBF is 50W (Tc) versus STP3NK50Z at 45W (Tc).

Q: Are there package compatibility issues between the IRF820LPBF and STP3NK50Z?

A: Yes. The IRF820LPBF uses an I2PAK (TO-262-3) package, while the STP3NK50Z uses a TO-220 package. These packages have different footprints and pin configurations. PCB layout modifications are required if substitution is attempted.

Q: Do both devices meet RoHS compliance requirements?

A: Yes. Both the IRF820LPBF and STP3NK50Z are ROHS3 compliant and carry identical MSL ratings of 1 (Unlimited), indicating no moisture sensitivity constraints during storage or handling.

Q: What is the significance of the "Not For New Designs" status on the STP3NK50Z?

A: This designation indicates that STMicroelectronics has discontinued active development and support for this part. It is available only for maintenance and repair of existing systems. New product designs should not incorporate this part, as future availability and support cannot be guaranteed.

Q: Can the lower gate charge of the STP3NK50Z (15nC versus 24nC) affect circuit performance?

A: Yes. Lower gate charge results in faster switching characteristics and reduced gate drive power requirements. This may improve efficiency in some applications but could also introduce different EMI characteristics. Circuit-level evaluation is necessary to determine compatibility.

Q: Are the operating temperature ranges identical for both devices?

A: Yes. Both the IRF820LPBF and STP3NK50Z operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility in applications within this range.