IRF820L N-Channel MOSFET 500V 2.5A Equivalent & Substitute Parts

Part Overview

The IRF820L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 2.5A continuous drain current. The device is packaged in I2PAK (TO-262-3) through-hole configuration and is designed for high-voltage switching applications. The IRF820L is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	2.5	A
Gate-Source Voltage (Vgs) Max	±20	V
On-State Resistance (Rds On) Max @ 1.5A, 10V	3	Ohm
Gate Threshold Voltage (Vgs(th)) Max @ 250µA	4	V
Power Dissipation (Tc)	50	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package Type	I2PAK (TO-262-3)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF820L is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 2.5A at 25°C
On-State Resistance (Rds On): Must not exceed 3Ohm at specified gate voltage
Gate-Source Voltage (Vgs) Rating: Must accommodate ±20V or greater
Operating Temperature Range: Must span -55°C to 150°C minimum
Mounting Type: Through-hole configuration required
Technology: N-Channel MOSFET (Metal Oxide)

Secondary Considerations:

Package compatibility (I2PAK preferred; alternative through-hole packages acceptable with mechanical verification)
Product status and compliance certifications (RoHS, REACH)
Gate charge and input capacitance characteristics for switching performance

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications and packaging) and functional substitutes (equivalent electrical performance with alternative packaging).

Parameter Comparison

Parameter	IRF820L	IRF820LPBF	STP3NK50Z
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
Vdss (V)	500	500	500
Id @ 25°C (A)	2.5	2.5	2.3
Rds On Max @ 10V (Ohm)	3 @ 1.5A	3 @ 1.5A	3.3 @ 1.15A
Vgs(th) Max (V)	4 @ 250µA	4 @ 250µA	4.5 @ 50µA
Vgs Max (V)	±20	±20	±30
Gate Charge Qg Max @ 10V (nC)	24	24	15
Input Capacitance Ciss @ 25V (pF)	360	360	280
Power Dissipation Tc (W)	50	50	45
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package Type	I2PAK (TO-262-3)	I2PAK (TO-262-3)	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Not For New Designs
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF820LPBF (Direct Equivalent - Preferred for Replacement)

The IRF820LPBF is the direct functional equivalent of the IRF820L, manufactured by Vishay Siliconix. It maintains identical electrical specifications across all critical parameters: 500V Vdss, 2.5A continuous drain current, 3Ohm Rds On, and I2PAK through-hole packaging. The primary distinction is product status: IRF820LPBF is classified as Active, ensuring ongoing availability and supply chain continuity. IRF820LPBF is ROHS3 compliant, addressing regulatory requirements for new designs and manufacturing environments. Packaging is supplied in tube format. This part is the recommended direct replacement for obsolete IRF820L applications.

STP3NK50Z (Functional Substitute - Alternative for High-Voltage Applications)

The STP3NK50Z, manufactured by STMicroelectronics, is a functional substitute meeting the 500V voltage rating and providing equivalent switching performance. Key electrical parameters are comparable: 500V Vdss, 2.3A continuous drain current (within 8% of IRF820L specification), and 3.3Ohm Rds On. The STP3NK50Z features lower gate charge (15 nC versus 24 nC) and reduced input capacitance (280 pF versus 360 pF), resulting in faster switching characteristics. However, the STP3NK50Z is packaged in TO-220-3 configuration rather than I2PAK, requiring mechanical redesign of the printed circuit board layout and thermal management approach. Power dissipation rating is 45W (Tc), slightly lower than the IRF820L 50W rating. STP3NK50Z is ROHS3 compliant and classified as Not For New Designs. This part is suitable for applications where TO-220 packaging is acceptable and switching speed improvement is beneficial.

Selection Criteria Summary:

For direct replacement with minimal redesign: IRF820LPBF
For new designs requiring 500V N-Channel MOSFET: IRF820LPBF (active status, full compliance)
For applications tolerating package change and benefiting from improved switching characteristics: STP3NK50Z (with PCB layout verification)

Frequently Asked Questions (FAQ)

Q: Can IRF820LPBF be used as a direct drop-in replacement for IRF820L?

A: Yes. IRF820LPBF is electrically and mechanically identical to IRF820L, with identical I2PAK through-hole packaging, pinout, and electrical specifications. The primary difference is product status (Active versus Obsolete) and RoHS compliance. No circuit modifications are required.

Q: What are the key differences between IRF820LPBF and STP3NK50Z?

A: Both devices share 500V Vdss rating and through-hole mounting. IRF820LPBF maintains 2.5A continuous current and 3Ohm Rds On in I2PAK packaging. STP3NK50Z provides 2.3A continuous current and 3.3Ohm Rds On in TO-220 packaging. STP3NK50Z features lower gate charge (15 nC versus 24 nC) and input capacitance (280 pF versus 360 pF), enabling faster switching. Package change from I2PAK to TO-220 requires PCB redesign.

Q: Is the IRF820L still available for procurement?

A: IRF820L is classified as obsolete. Current inventory exists (1009 pieces reported), but long-term availability is not guaranteed. IRF820LPBF (Active status) is the recommended replacement for ongoing procurement.

Q: Can STP3NK50Z be used in applications originally designed for IRF820L?

A: STP3NK50Z meets the 500V voltage and 2.3A current requirements, making it electrically compatible for most applications. However, the TO-220 package differs from I2PAK, requiring PCB layout modification and thermal management verification. Gate charge and capacitance differences may affect switching performance in high-frequency circuits. Application-specific validation is required.

Q: What is the impact of RoHS compliance on part selection?

A: IRF820L is RoHS non-compliant; IRF820LPBF and STP3NK50Z are ROHS3 compliant. For manufacturing environments subject to RoHS regulations (EU, automotive, consumer electronics), ROHS3-compliant parts are mandatory. IRF820LPBF is the preferred choice for regulated applications.

Q: Are there thermal management differences between these parts?

A: IRF820L and IRF820LPBF both dissipate 50W (Tc). STP3NK50Z dissipates 45W (Tc), a 10% reduction. The I2PAK package (IRF820L, IRF820LPBF) and TO-220 package (STP3NK50Z) have different thermal characteristics. Thermal interface design and heatsink requirements must be verified for each package type.

Q: What is the significance of gate charge differences?

A: IRF820L and IRF820LPBF have 24 nC gate charge; STP3NK50Z has 15 nC. Lower gate charge reduces switching losses and enables faster switching transitions. In high-frequency applications, STP3NK50Z may provide efficiency improvements. In low-frequency applications, the difference is negligible.

Q: Can these parts be used interchangeably in existing inventory?

A: IRF820LPBF can be used interchangeably with IRF820L without modification. STP3NK50Z cannot be used as a direct substitute due to package differences; PCB redesign is required. Inventory management should distinguish between I2PAK and TO-220 packages.

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