IRF820AS MOSFET N-Channel 500V 2.5A Equivalent & Substitute Parts

Part Overview

The IRF820AS is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 2.5A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and dissipates up to 50W at the case temperature. The IRF820AS is classified as obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. Substitute parts must maintain identical electrical specifications and mechanical compatibility to ensure direct replacement without circuit redesign.

Substiute Parts

IRF820AS

Vishay SiliconixIn Stock: 15389IRF820AS Datasheet

Current PartRFQ

IRF820ASPBF

Vishay SiliconixIn Stock: 15335IRF820ASPBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF820AS is determined by strict equivalence across all electrical and mechanical parameters. The primary substitute identified is the IRF820ASPBF, which maintains identical specifications for voltage rating, current capacity, on-resistance, power dissipation, temperature range, and package configuration. Both parts are N-Channel MOSFETs with 500V Vdss, 2.5A continuous drain current, 3Ohm maximum on-resistance at specified conditions, and 50W power dissipation capability in the TO-263 (D2PAK) surface mount package.

The key parameters determining substitution eligibility are:

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 2.5A @ 25°C
• On-Resistance (Rds On): 3Ohm @ 1.5A, 10V
• Power Dissipation: 50W
• Package Type: TO-263 (D2PAK)
• Operating Temperature: -55°C to 150°C

Parameter Comparison

Engineering Selection Recommendations

The IRF820ASPBF is the direct functional equivalent of the IRF820AS. All electrical parameters, mechanical dimensions, and thermal characteristics are identical. The IRF820ASPBF is classified as Active product status, ensuring continued availability and manufacturing support, whereas the IRF820AS is Obsolete.

The IRF820ASPBF carries ROHS3 compliance certification, meeting current environmental and regulatory requirements for electronic components in most jurisdictions. The IRF820AS is RoHS non-compliant. For new designs or procurement requiring regulatory compliance, the IRF820ASPBF is the appropriate selection.

Both parts are supplied by Vishay Siliconix under the same base product number (IRF820) and share identical electrical performance characteristics. The IRF820ASPBF is supplied in Tube packaging, whereas packaging information for the IRF820AS is not specified in the provided data.

Selection between these parts should be based on product status requirements and regulatory compliance mandates applicable to the end application.

Frequently Asked Questions (FAQ)

Q: Can the IRF820ASPBF directly replace the IRF820AS in existing circuits?

A: Yes. The IRF820ASPBF is electrically and mechanically identical to the IRF820AS. All voltage ratings, current specifications, on-resistance characteristics, and thermal parameters are equivalent. The TO-263 (D2PAK) package pinout and footprint are identical, enabling direct PCB-level substitution without circuit modification.

Q: What is the primary difference between the IRF820AS and IRF820ASPBF?

A: The IRF820ASPBF is the active production variant with ROHS3 compliance certification. The IRF820AS is classified as Obsolete. Both parts are manufactured by Vishay Siliconix and share identical electrical specifications.

Q: Are there any thermal or electrical performance differences between these parts?

A: No. Both parts have identical maximum power dissipation (50W), operating temperature range (-55°C to 150°C), drain-to-source voltage (500V), continuous drain current (2.5A), and on-resistance (3Ohm @ 1.5A, 10V). Thermal performance in equivalent circuit applications will be identical.

Q: What packaging options are available for these parts?

A: The IRF820ASPBF is supplied in Tube packaging. Both parts use the TO-263 (D2PAK) surface mount package with identical mechanical specifications.

Q: Is the IRF820ASPBF suitable for new product designs?

A: Yes. The IRF820ASPBF is classified as Active product status with ROHS3 compliance, making it appropriate for new designs requiring current regulatory compliance and long-term component availability.

Q: What is the gate charge specification for these MOSFETs?

A: The maximum gate charge (Qg) is 17 nC at 10V gate-source voltage for both parts. This parameter affects switching speed and driver circuit design.

Q: Are these parts suitable for high-frequency switching applications?

A: These parts are rated for 500V operation with 2.5A continuous current and 50W power dissipation. Application suitability depends on specific switching frequency, duty cycle, and thermal management requirements of the target circuit. The gate charge specification of 17 nC @ 10V and input capacitance of 340 pF @ 25V define switching characteristics.