IRF820AL MOSFET N-Channel 500V 2.5A Equivalent & Substitute Parts

Part Overview

The IRF820AL is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 2.5A continuous drain current and 50W power dissipation. The device is packaged in a Through Hole I2PAK (TO-262-3) configuration and is currently classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	2.5	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3	Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17	nC @ 10 V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	340	pF @ 25 V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA	—

Substitute Part Grouping Explanation

Substitution of the IRF820AL is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must match the following criteria:

Electrical Parameters (Must Match Exactly):

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2.5 A (Tc)
Drive Voltage (Max Rds On): 10 V
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Vgs (Max): ±30 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Power Dissipation (Max): 50 W (Tc)
Operating Temperature: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match Exactly):

Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

Substitute parts are identified from the same manufacturer base product number (IRF820) with identical electrical specifications and package configuration. Packaging format (Tube vs. other configurations) does not affect electrical or mechanical compatibility.

Parameter Comparison

Parameter	IRF820AL	IRF820ALPBF	Match
Manufacturer	Vishay Siliconix	Vishay Siliconix	✓
FET Type	N-Channel	N-Channel	✓
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	✓
Drain to Source Voltage (Vdss)	500 V	500 V	✓
Current - Continuous Drain (Id) @ 25°C	2.5 A (Tc)	2.5 A (Tc)	✓
Drive Voltage (Max Rds On)	10 V	10 V	✓
Rds On (Max) @ Id, Vgs	3 Ohm @ 1.5A, 10V	3 Ohm @ 1.5A, 10V	✓
Vgs(th) (Max) @ Id	4.5 V @ 250µA	4.5 V @ 250µA	✓
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V	17 nC @ 10 V	✓
Vgs (Max)	±30 V	±30 V	✓
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 25 V	340 pF @ 25 V	✓
Power Dissipation (Max)	50 W (Tc)	50 W (Tc)	✓
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262-3 Long Leads, I2PAK, TO-262AA	✓
Product Status	Obsolete	Active	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The IRF820ALPBF is a direct parametric equivalent to the IRF820AL. All electrical characteristics, including voltage rating, current capacity, on-resistance, gate charge, and thermal specifications, are identical. The mechanical package configuration and mounting type are also identical, enabling direct pin-for-pin substitution in circuit designs.

The primary distinction between the two parts is product status and regulatory compliance. The IRF820AL is classified as obsolete, while the IRF820ALPBF is an active product. The IRF820ALPBF carries ROHS3 compliance certification, whereas the IRF820AL is RoHS non-compliant. For new designs and applications requiring regulatory compliance with current environmental standards, the IRF820ALPBF is the appropriate selection. For legacy system repairs or applications where RoHS compliance is not a requirement, either part is electrically and mechanically interchangeable.

Frequently Asked Questions (FAQ)

Q: Can the IRF820ALPBF be used as a direct replacement for the IRF820AL?

A: Yes. The IRF820ALPBF is a parametric equivalent with identical electrical specifications and package configuration. Direct pin-for-pin substitution is supported without circuit modification.

Q: What is the difference between IRF820AL and IRF820ALPBF?

A: The parts are electrically and mechanically identical. The IRF820ALPBF is an active product with ROHS3 compliance, while the IRF820AL is obsolete and RoHS non-compliant. Packaging format differs (Tube vs. other configurations), but this does not affect electrical or mechanical compatibility.

Q: Are there any thermal or performance differences between these parts?

A: No. Both parts have identical power dissipation ratings (50W), operating temperature ranges (-55°C to 150°C), and all thermal characteristics. Performance in circuit applications is equivalent.

Q: Does the packaging format affect compatibility?

A: No. Both parts use the same TO-262-3 Long Leads I2PAK package. Packaging format (Tube) is a supply and handling specification only and does not affect electrical or mechanical compatibility in circuit applications.

Q: Which part should be selected for new designs?

A: The IRF820ALPBF is recommended for new designs due to its active product status and ROHS3 compliance certification. This ensures long-term availability and alignment with current environmental regulations.

Q: Can these parts be used interchangeably in existing circuit boards?

A: Yes. The identical package configuration, pin assignment, and electrical specifications enable direct substitution without PCB modification or circuit redesign.

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